• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.147-148
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• 2006

Ge nanocrystals(NCs)-embedded MOS capacitors are charactenzed in this work using capacitance-voltage measurement. High-k dielectrics $HfO_2$ are employed for the gate material m the MOS capacitors, and the C-V curves obtained from $O_2-$ and $NH_3$-annealed $HfO_2$ films are analyzed.

• Journal of IKEEE
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• v.22 no.3
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• pp.780-785
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• 2018

In this work, We investigated the frequency-dependent capacitance tunability of a metal-ferroelectric-metal variable capacitor fabricated using ALD $HfO_2$ ferroelectric material. The capacitance of the MFM capacitor could be tuned as a function of the bias voltage, up to the microwave frequency range. We observed a capacitance tuning range of ~3 % up to 2.5 GHz, proving the feasibility of the use of ALD $HfO_2$ in the microwave frequency band.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• Journal of IKEEE
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• v.23 no.2
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• pp.594-598
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• 2019

We demonstrate an alternative alignment process using transferring process on solution driven HfZnO film. Parallel pattern is firstly fabricated on a silicon wafer by laser interference lithography. Prepared HfZnO solution fabricated by sol-gel process is spin-coated on a glass substrate. The silicon wafer with parallel pattern is placed on the HfZnO film and annealed at $100^{\circ}C$ for 30 min. After transferring process, parallel grooves on the HfZnO film is obtained which is confirmed by atomic force microscopy and scanning electron microscopy. Uniform liquid crystal alignment is achieved which is attributed to an anisotropic characteristic of HfZnO film by parallel grooves. The liquid crystal cell exhibited a pretilt angle of $0.25^{\circ}$ which showed a homogeneous alignment property.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.23.1-23.1
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• 2008

• Clean Technology
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• v.18 no.3
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• pp.280-286
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• 2012

The dry etching of sacrificial $SiO_2$ was performed in supercritical carbon dioxide. The etching of boron phosphor silica glass (BPSG), tetraethyl orthosilicate (TEOS), thermal $SiO_2$, and Si-nitride (SiN) was investigated by using a two chamber system with HF/py etchant and alcohol additives. The etch rate of sacrificial $SiO_2$ increased upon the addition of methanol. The etch selectivity of BPSG with respect to SiN was highest with IPA although the highest etch rate was resulted from methanol except BPSG. The etch rate increased with the temperature in HF/py/MeOH system. Especially the increase of the etch rate was much higher for BPSG with an increase in the reaction temperature. The etch residue was not reduced apparently upon the addition of alcohol cosolvents to HF/py. While the etch rate in HF/$H_2O$ was higher than HF/py/alcohol system, the rate decreased with the addition of alcohols to HF/$H_2O$. The cantilever beam structure of high aspect ratios was released by the dry ething in supercritical carbon dioxide without damage.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.158-159
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• 2007

반도체 소자의 공정에 있어서 device scaling으로 인한 게이트 산화막 대체 유전체 (high-k)의 공정 개발 확보 방안 필요하다. 본 논문에서는 $Cl_2$/Ar 유도 결합 플라즈마를 이용하여 $HfO_2$ 박막을 식각하였다. $Cl_2$(80 %)/Ar(20 %)의 가스비, 600 W의 RF 전력, -150 V의 직류 바이어스 전압, 20 sccm의 총 가스유랑, 15 mTorr의 압력에서 15.4 nm/min의 최대 식각률을 얻을 수 있었다. 식각 된 $HfO_2$ 박막 표면을 XPS 분석한 결과 Hf와 O는 Cl 라디칼과 반응을 하여 높은 휘발성을 보이지만 Hf-O의 안정된 결합으로 인하여 이온에 의한 스퍼터링 효과에 의해서 식각된다.

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.563-567
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• 2016

The structural properties of $HfO_2$ films could be improved by thermal treatment owing to their crystallization. We deposited $HfO_2$ films on sapphire by radio frequency (RF) magnetron sputtering, whose base vacuum pressure was lower than $4.5{\times}10^{-6}$ Pa, RF power was 100 W, working temperature was $200^{\circ}C$, working pressure was 3 mTorr, and the density of the active gas (Argon) was 20 sccm. After depositing the $HfO_2$ films, the samples were thermally treated by rapid thermal annealing (RTA) in $O_2$ ambient at different temperatures. Subsequently, the measured physical properties (structural, morphological, and optical) indicated that the crystallite size, refractive index at a wavelength of 632 nm, and packing density increased with rising temperatures. In particular, an $HfO_2$ film thermally treated at $800^{\circ}C$ in $O_2$ ambient had the highest refractive index of 2.0237 and packing density of 0.9638. The relation between optical and structural properties was also analyzed.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1019-1026
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• 2017

The structural properties of $HfO_2$ films could be improved by calibrating the working pressure owing to the enhanced quality of a thin film. We deposited $HfO_2$ films on glass substrates by radio frequency (RF) magnetron sputtering under a base vacuum pressure lower than $4.5{\times}10^{-6}Pa$, RF power of 100 W, substrate temperature of $300^{\circ}C$. The working pressures were varied from 1 mTorr to 15 mTorr. Subsequently, their structural and optical properties were investigated. In particular, the $HfO_2$ film deposited at 1 mTorr had superior properties than the others, with a crystallite size of 10.27 nm, surface roughness of 1.173 nm, refractive index of 2.0937 at 550 nm, and 84.85 % transmittance at 550 nm. These results indicate that the $HfO_2$ film deposited at 1 mTorr is suitable for application in transparent electric devices.