• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1285-1292
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• 2009

Large single crystals of zeolite, |$Na_{75}$|[$Si_{117}Al_{75}O_{384}$]-FAU (Na-Y, Si/Al = 1.56), were synthesized from gels with composition of 3.58Si$O_2$ : 2.08NaAl$O_2$ : 7.59NaOH : 455$H_2$O : 5.06TEA : 2.23TCl. One of these, a colorless single-crystal was ion exchanged by allowing aqueous 0.02 M CsOH to flow past the crystal at 293 K for 3 days, followed by dehydration at 673 K and 1 ${\times}\;10^{-6}$ Torr for 2 days. The crystal structure of fully dehydrated partially $Cs^+$-exchanged zeolite Y, |$Cs_{45}Na_{30}$|[$Si_{117}Al_{75}O_{384}$]-FAU per unit cell (a = 24.9080(10) $\AA$) was determined by single-crystal X-ray diffraction technique in the cubic space group Fd $\overline{3}$ m at 294(1) K. The structure was refined using all intensities to the final error indices (using only the 877 reflections with $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.0966 (Based on F) and $R_2\;=\;0.2641\;(Based\;on\;F^2$). About forty-five $Cs^+$ ions per unit cell are found at six different crystallographic sites. The 2 $Cs^+$ ions occupied at site I, at the centers of double 6-ring (D6Rs, Cs-O = 2.774(10) $\AA$ and O-Cs-O = 88.9(3) and 91.1(3)$^o$). Two $Cs^+$ ions are found at site I’ in the sodalite cavity; the $Cs^+$ ions were recessed 2.05 $\AA$ into the sodalite cavity from their 3-oxygen plane (Cs-O = 3.05(3) $\AA$ and O-Cs-O = 77.4(13)$^o$). Site-II’ positions (opposite single 6-rings in the sodalite cage) are occupied by 7 $Cs^+$ ions, each of which extends 2.04 $\AA$ into the sodalite cage from its 3-oxygen plane (Cs-O = 3.067(11) $\AA$ and O-Cs-O = 80.1(3)$^o$). The 26 $Cs^+$ ions are nearly three-quarters filled at site II in the supercage, being recessed 2.34 $\AA$ into the supercage (Cs-O = 3.273(8) $\AA$ and O-Cs-O = 74.3(3)$^o$). The 4 $Cs^+$ ions are found at site III deep in the supercage (Cs-O = 3.321(19) and 3.08(3) $\AA$), and 4 $Cs^+$ ions at another site III’ (Cs-O = 2.87(4) and 3.38(4) $\AA$). About 30 $Na^+$ ions per unit cell are found at one crystallographic site; The $Na^+$ ions are located at site I’ in the sodalite cavity opposite double 6-rings (Na-O = 2.578(11) $\AA$ and O-Na-O = 97.8(4)$^o$).

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 분석과학
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• 제14권4호
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• pp.317-323
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• 2001

아크릴로니트릴을 제조하기 위한 가암모니아 산화(ammoxidation) 공정에 쓰이는 몬산토 촉매의 용해방법을 연구하였다. 실리카가 지지체인 이 촉매는 마이크로파 용해장치를 이용하여 염산, 플루오르화 수소산 및 과산화수소의 혼합산으로 녹이는 것이 가장 효과적이었다. 이 장치로 녹일 때 용기 내의 압력이 높아 안전장치가 작동될 경우, 규소는 휘발할지라도 안티몬, 몰리브덴, 철, 비스무트 및 우라늄은 휘발하지 않았다. 유도결합 플라스마 원자방출분광법으로 측정한 결과 $SiO_2$ $50.5{\pm}0.4%$, $Sb_2O_3$ $29.6{\pm}0.6%$, $UO_2$ $10.2{\pm}0.1%$, $Fe_2O_3$ $6.1{\pm}0.1%$, $MoO_3$ $0.73{\pm}0.01%$ 및 $Bi_2O_3$ $0.49{\pm}0.01%$이었으며, 기준 값과의 상대 오차는 비스무트를 제외하고 모두 ${\pm}10%$ 이내였다.

• 한국세라믹학회지
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• 제43권6호
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• pp.338-343
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• 2006

The effects of lead-borosilicate glass frits on the sintering behavior and microwave dielectric properties of ceramic-glass composites were investigated as functions of glass composition of glass addition ($10{\sim}50vol%$), softening point (Ts) of the glass, and sintering temperature of the composites ($500{\sim}900^{\circ}C$ for 2 h). The addition of 50 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of Ts. PbO addition in to the glass enhanced the reaction with $Al_{2}O_3$ to form liquid phase and $PbAl_{2}Si_{2}O_8$, which was responsible to lower Ts. Dielectric constant(${\epsilon}_r$), $Q{\times}f_0$ and temperature coefficient of resonant frequency (${\tau}_f$) of the composite with 50 vol% glass contents ($B_{2}O_{3}:PbO:SiO_{2}:CaO:Al_{2}O_3$ = 5:40:45:5:5) demonstrated 8.5, 6,000 GHz, $-70\;ppm/^{\circ}C$, respectively, which is applicable to substrate requiring a low dielectric constant. When the same glass composition was applied sinter $MgTiO_3\;and\;TiO_2,\;at\;900^{\circ}C$ (50 vol% glass in total), the properties were 23.8, 4,000 GHz, $-65ppm/^{\circ}C$ and 31.1, 2,500 GHz, $+80ppm/^{\circ}C$ respectively, which is applicable to filter requiring an intermidiate dielectric constant.

• ETRI Journal
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• 제11권1호
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• pp.89-96
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• 1989

$C_2F_6$/$CHF_6$ 플라즈마를 이용한 실리콘 산화막의 반응성이온 식각공정시 실리콘 표면에 형성되는 고분자 잔류막과 근표면 손상영역을 X-선 광전자분광법(x-ray photoelectron spectroscopy)과 러더포드 후방산란법(Rutherford backscattering)을 이용하여 연구하였다. 표면 잔류막은 CF, $CF_2$, $CF_3$, $C-CF_x$, 그리고 C-C/C-H 등의 결합을 가진 불화탄소 고분자로 구성되어 있으며, 또한 C 1s와 Si 2p X-선 광선자 스펙트럼으로부터 C-Si 결합이 존재함을 확인하였다. 반응성이온 식각을 거친 실리콘 표면 구조의 연구결과, 불소와 탄소로 구성된 고분자막($<20 \AA$)이 극표면에 존재하며, 식각 후 공기중에 노출됨에 따라 고분자 잔류층으로 산소가 통과하여 기판을 산화시킴으로써 실리콘 산화막( $~10\AA$)이 그 아래에 형성되었음을 알았다. 그리고 실리콘산화막 아래에 탄소-산소 결합영역이 관찰되었다. 플라즈마 가스의 조성에서 $CHF_3$의 량이 증가함에 따라 고분자 잔류막의 두께가 증가하였으며, 본 연구의 실험조건에서 2분간 overetching한 시편의 경우에도 실리콘 표면 영역의 손상정도가 매우 적음을 발견하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.75-75
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• 2018

Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

• 공업화학
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• 제34권6호
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• pp.674-678
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• 2023

고정층 상압 유통식 반응기를 사용하여 Pt(1)-Fe(30)/MCM-41와 Fe(30)/MCM-41의 촉매상에서 메탄의 분해 반응을 수행하여 수소의 수율을 구하여 Pt의 효과를 조사하였다. XRD 분석으로 반응 전 Pt(1)-Fe(30)/MCM-41 촉매에서 Fe₂O₃와 Pt의 결정상이 나타났다. SEM, EDS 분석과 매핑 이미지로부터 촉매 표면상에 Fe, Pt, Si, O의 나노 입자들이 균일하게 분포함을 알 수 있었다. XPS 분석으로 Pt⁰, Pt²⁺, Pt⁴⁺, Ft⁰, Fe²⁺, Fe³⁺ 등의 이온과 O^2-, O^-의 산소종이 존재함을 알 수 있었고, Fe(30)/MCM-41 촉매에 Pt를 1 wt% 첨가하면 촉매 표면상에서 Fe2p의 원자 백분율이 13.39%에서 16.14%로 증가하고 Pt4f는 1.51%이었다. 수소의 수율은 Fe(30)/MCM-41보다 3.2배 높았다. Pt로부터 Fe로 H₂의 스필오버(spillover) 효과로 Fe 입자의 환원을 증가시키고, Fe, Pt와 MCM-41의 적당한 상호작용으로 미세한 나노입자를 촉매 표면상에 균일하게 분산을 증가시켜 수소수율을 향상시켰다.

• Journal of Applied Biological Chemistry
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• 제60권2호
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• pp.109-111
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• 2017

The root bark of Morus alba L. were extracted with 80% aqueous MeOH, and the concentrated extract was partitioned with EtOAc, n-BuOH, and $H_2O$ fractions. The repeated silica gel ($SiO_2$), octadecyl $SiO_2$ (ODS), and Sephadex LH-20 column chromatographies of the EtOAc fraction led to isolation of 12 phenolic compounds. The chemical structures of the compounds were determined as sanggenol Q (1), sanggenol A (2), sanggenol L (3), kuwanon T (4), cyclomorusin (5), sanggenon F (6), sanggenol O (7), sanggenon N (8), sanggenon G (9), mulberrofuran G (10), mulberrofuran C (11), and moracin E (12). All isolated compounds were evaluated for inhibit lipopolysaccharide-induced nitric oxide production in RAW 264.7 macrophages.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.545-550
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• 2000

In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

• 지질공학
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• 제15권4호
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• pp.391-405
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• 2005

포항시 흥해읍 일대 지하수의 수리 지화학적 특성 을 파악하기 위하여, 지표수, 천부지 하수 및 중간심도와 심부 지하수를 대상으로 수질 및 안정 동위 원소 분석 을 수행하였다. 심도별 수질 유형은 지표수 및 천부지하수는 Ca-Cl, 중간 심도는 $Na-HCO_3$, 심부지하수는 Na-Cl형이 우세하게 나타난다. $HCO_3^-$ $SiO_2$의 기원은 천부 지하수의 경우 규산염광물의 풍화에서, 심부지하수는 탄산염 광물의 풍화에서 생성되었다. Ca 및 Mg이 온은 천부 및 심부 모두 석회 석 및 백운석에서 기인한다. 천부 지하수의 $SO_4^{2-}$ 기원은 황철석에서 기인하는 것으로 나타난다 심도의 증가에 따라 pH 및 TDS는 증가하나, Eh및 DO는 감소하는 경향을 보인다. 알카리 금속(K, Na, Li.)은 심부로 갈수록 농도가 증가하나, 알카리 토금속(Mg, Ca) 및 AL은 천부로 갈수록 증가하는 양상을 보인다. 음이온인 할로겐 원소(F, Cl, Br) 및 $HCO_3^-$의 농도도 심부로 갈수록 증가함을 보인다. 산소 및 수소 안정동위원소 평균값은 심부 지하수는 평균값: ${\delta}^{18}O=-10.1\%_{\circ},\;{\delta}D=-65.8\%_{\circ}$, 중간심도는 평균값: ${\delta}^{18}O=-8.9\%_{\circ},\;{\delta}D=-59.6\%_{\circ}$ 천부 지하수는 평균값: ${\delta}^{18}O=-8.0\%_{\circ},\;{\delta}D=-53.6\%_{\circ}$지표수는 평균값: ${\delta}^{18}O=-7.9\%_{\circ},\;{\delta}D=-53.3\%_{\circ}$의 값을 각각 보인다.