• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.15-18
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• 2009

To enhance near UV-visible absorption region and to applied phosphor convert-white LEOs (PC-WLEDs), a red phosphor composed of ${Y_2}{SiO_5}:\;EU^{3+}$, $Bi^{3+}$ compounds was prepared by the conventional solid-state reaction. The photoluminescence (PL) shown that samples were excited by near UV light 395 nm for measurement of PL spectra. Emission spectra of samples have shown red emissions at 612 nm ($^5D_0{\to}^7F_2$). The enhanced near $UV{\sim}$ visible excitation spectrum with a broad band centered at 258 nm and 282 nm originated in the transitions toward the charge transfer state (CTS) due to the $Eu^{3+}-Bi^{3+}-O^{2-}$ interaction. The other excitation band at $350\;nm{\sim}480\;nm$, corresponding to the transitions $^7F_0{\to}^5L_9$ (364 nm), $^7F_0{\to}^5G_3$ (381 nm), $^7F_0{\to}^5L_6$ (395 nm), $^7F_0{\to}^5D_3$, (415 nm) and $^7F_0{\to}^5D_2$ (466 nm), occurred due to enhanced the f-f transition increasing $Bi^{3+}$ and $Eu^{3+}$ ions. The PL intensity increased with increased as concentration of $Bi^{3+}$ and the emission intensity becomes with a maximum at 0.125 mol.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.91-96
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• 1997

The electrical characteristics and the plasma parameters of planar inductively coupled plasmas (ICP) have been measured. The resistance of the total load including the coil and the plasma varied from 1 to 4 W and the inductance from 1.5 m to 2 mH when the power was changed from 100 to 1000 W and the pressure from 1 to 10 mTorr. The density of electron measured by Langmuir probe was over $10^{11}/\textrm{cm}^3$ and the temperature varied between 3 and 5 eV as the process conditions were changed. Bias modulation was adopted as a new method to improve the selectivity of $SiO_2$on Si in $C_4F_8$ (octafluorocyclobutane) plasma. The selectivity was improved as the duty ratio decreased, but the etch rate of $SiO_2$decreased below 400$\AA$/min. $H_2$addition to $C_4F_8$ plasma showed that the etch selectivity could be higher than 50 and the etch rate of $SiO_2$over 2000$\AA$/min when 60% $H_2$was added.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.167-171
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• 2004

The electroless deposition of copper on the hydrogen-terminated Si(111) surface was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy, scanning tunneling microscopy (STM), and energy-dispersive spectroscopy (EDS). The hydrogen-terminated Si(111) surface prepared was stable under air atmosphere for a day or more. It was found from ATR-FTIR that two bands centered at 2000 and 2260 $cm^{-1}$ appeared after the H-Si(111) surface was immersed in 40% $NH_4F$ solution containing 10 mM $Cu^{2+}$. On the other hand, STM image included the copper islands with a height of 5 nm and a diameter of 10-20 nm. The EDS data displayed the presence of copper, silicon and oxygen species. The results were rationalized in terms of the redox reaction of surface Si atoms and $Cu^{2+}$ ions in solutions, which are changed into $Si(OH)_x(F)_y$ containing $SiF_6^{2-}$ ions and neutral copper islands.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.182-187
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• 2004

The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1149-1151
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• 1995

In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

• Cement Symposium
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• no.25
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• pp.154-160
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• 1997

• Journal of the Korean Chemical Society
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• v.54 no.6
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• pp.723-726
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• 2010

An efficient and simplified protocol for $NaHSO_4/SiO_2$ catalyzed solvent-free synthesis of $\beta$-enaminone and 2-methylquinolin-4(1H)-one derivatives under microwave irradiation is described. A series of functionalized derivatives have been synthesized in shorter reaction times with moderate to good yields. The use of milder catalyst in non-conventional method offers significant advantages over conventional methods, such as higher selectivities, simplicity, solvent-free reaction and non-environmental polluting conditions.

• Journal of Magnetics
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• v.16 no.2
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• pp.177-180
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• 2011

0.30 mm thick and 90 mm wide thin foils made of Fe-6.5wt.%Si alloy were successfully fabricated by traditional rolling. The as-rolled sheets had good shapes and shining metal luster. The effects of annealing temperature on the magnetic properties of the sheets were investigated. Excellent Dc properties ($H_c$: 11.55 A/m, ${\mu}_m$: 23710, and $B_s$: 1.439 T) were obtained at an annealing temperature of 1453 K for 1.5 h. At low frequencies ($\leq$ 1 kHz), heat treatment temperature has little effect on iron loss which remained at the level of 9.8 W/kg. Annealing at 1273 K for 1.5 h is optimum for frequencies above 5 kHz.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.224-225
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• 2006

The Ethylene polymerization behavior of a series of polymethylene bridged dinuclear CGC $[Zr({\eta}^{5}:{\eta}^{1}-C_{9}H_{5}SiMe_{2}NCMe_{3})Me_{2}]_{2}[(CH_{2})_{n}]\;[_{n}=6(1),\;9(2),\;12(3)]$ in the cocatalytic activation with $Ph_{3}C^{+}B^{-}(C_{6}F_{5})_{4}\;(B_{1})\;or\;Ph_{3}C^{+}(C_{6}F_{5})_{3}B^{-}C_{6}F_{4}B^{-}(C_{6}F_{5})_{3}Ph_{3}C^{+}\;(B_{2})\;or\;B(C_{6}F_{5})_{3}\;(B_{3})$ were investigated to study the nuclearity effects as well as the counteranion effects. The ethylene polymerization and ethylene/1-hexene copolymerization were conducted at $30^{\circ}C$ It was found that both in ethylene polymerization and ethylene/1-hexene copolymerization, activities increased in the order of 1 < 2 < 3, which indicates the presence of longer bridge between two active sites contributes more efficiently to facilitate the polymerization activity.