• Corrosion Science and Technology
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• v.4 no.6
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• pp.226-230
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• 2005

Si incorporated diamond-like carbon (Si-DLC) films ranging from 0 to 2 at.% contents were deposited on STS 316L substrates for orthopedic implants by means of r.f. plasma-assisted chemical vapor deposition (r.f. PACVD) technique, using mixtures of benzene ($C_6H_6$) and silane ($SiH_4$) as the precursor gases. This study provides the reliable and quantitative data for assessment of the effect of Si incorporation on corrosion property in the simulated body fluid environment through the electrochemical test. It was found that corrosion to resistance of Si-DLC coatings with increasing Si content are improved owing to high $sp^3$ bonding.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1351_1352
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• 2009

We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.2
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• pp.926-933
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• 2012

Phosphoric acid used for the production of phosphate fertilizers is synthesized by the reaction of phosphate rock and sulfuric acid. As the reaction is exothermic, yield of phosphoric acid is poor at elevated temperature. Therefore, enhancement in its yield requires the process temperature be maintained by releasing the vapor ($80^{\circ}C$) containing HF and SiF4 through a vacuum cooler. However, these valuable resources; Fand Si, which can be utilized for the manufacture of refrigerant and polysilicon, respectively, are being wasted in the treatment process. We performed lab-scale experiments to estimate the amount of recoverable H2SiF6, a by-product of phosphoric acid manufacturing process. The experimental results showed a decrease of fluorine concentration by 0.12wt% in the liquid phase. Preliminary estimation showed a possible recovery of 5,509 ton/yr of fluorine considering the scale of the fertilizer manufacturing plant. Furthermore, field-scale experiment showed that H2SiF6 could be enriched in liquid phase from 0.35wt% to 7.33wt% and the vapor flow-rate from vacuum cooler was estimated at $51,000m^3/hr$. Anew, the efficiency of fluorine recovery in the pilot-scale experiment was found to be 76.74% and the production of H2SiF6 was estimated at 5,340 ton/yr.

• Journal of the Korea Concrete Institute
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• v.17 no.5 s.89
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• pp.769-774
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• 2005

Fluosilicic acid(H2SiF6) is recovered as an aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded H3PO4 or HF. Generally, fluosilicates are the salts produced by the reaction of H2SiF6 and metal salts. Addition of fluosilicates to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. This study was performed to know mechanical properties and watertightness using fluosilicates based composite made from fluosilicates and other compounds. Mix proportions for experiments were modulated at 0.45 of water to cement ratio and $0.0-2.0\%$ of adding ratio of fluosilicates based composite. Evaluation for mechanical properties of concrete was conducted to know fresh state of concrete, hardening state of concrete, and watertightness. Evaluation for watertightness of concrete was carried out permeability, absorption test and porosity analysis. In addition. Scanning Electron Microscopy(SEM) and Energy Dispersive X-Ray(EDX) used for investigating micro-structure and atomic component distributed in hardened concrete. It is ascertained that characteristics of mechanical properties and watertightness was more improved than non-added because of packing role of fluosilicates based composite and pozzolanic reaction of soluble $SiO_2$. Also, concrete added fluosilicates based composite had a tendency to delay setting time and only $0.5\%$ addition of fluosilicates based composite delayed 150 minutes compared with non-added.

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.38-43
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• 1973

The spin-rotation constants of the proton and tile fluorine nucleus in C $H_4$, Si $H_4$, Ge $H_4$, C $F_4$, Si $F_4$ and Ge $F_4$ were determined experimentally by the molecular beam magnetic resonance method. From the Hamiltonian and the high field approximation, the quantized energy level is given by the following equation. W $m_{I}$ $m_{J}$=- $g_{I}$ $m_{I}$H- $g_{J}$ $m_{J}$H- $C_{av}$ $m_{I}$ $m_{J}$, where $c_{av}$ is one third of the trace of the C tensor. In the nuclear resonance experiment, the proton and the fluorine nuclear resonance curves consist of many unresolved lines given by v=- $g_{J}$H- $C_{av}$ $m_{I}$, and a Gaussian approximation is made to correlate $c_{av}$ to the experimentally obtained half-width of the resonance curve. In the rotational resonance experiment, the five resonance peaks as predicted by v=- $g_{I}$H- $c_{av}$ $m_{I}$, $m_{I}$=0, $\pm$1 and $\pm$2, were all observed. The magnitude of car was determined by measuring the frequency distance between two adjacent peaks. The sign of $c_{av}$ was determined by the side peak suppression technique. The technique is described, and the sign and magnitude of the spin-rotation constant cav are summarized as following: for C $H_4$ -10.3$\pm$0.4tHz(from the rotational resonance), for SiH +3.71$\pm$0.08kHz(from the nuclear resonance), for Ge $H_4$+3.79$\pm$0.13kHz(from the nuclear resonance), for C $F_4$, -6.81$\pm$0.08kHz(from the rotational resonance), for Si $F_4$, -2.46$\pm$0.06kHz(from the rotational resonance), and finally for Ge $F_4$-1.84$\pm$0.04kHz(from the rotational resonance).onal resonance).esonance).

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.531-536
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• 2001

SiCl$_4$/CH$_4$/H$_2$계를 사용한 플라즈마 화학증착법(PECVD)으로 실리콘(100) 기판 위에 3C-SiC막을 117$0^{\circ}C$~1335$^{\circ}C$의 온도범위에서 증착하였다. 증착온도, 유입가스비, R$_{x}$ [=CH$_4$/(CH$_4$+H$_2$)], 그리고 r.f. power를 변화시켜 증착막의 결정성에 대해 검토하였다. Thermal CVD에 비해 PECVD법은 박막의 증착속도를 향상시켰다. 증착된 3C-SiC은 (111) 면으로 최대의 우선배향성을 지님을 알 수 있었다. 실리콘 기판 위의 3C-SiC막의 결정성은 R$_{x}$값에 의존하였으며, R$_{x}$가 감소할수록 결정성이 더욱 향상되었다. Free Si가 3C-SiC막과 함께 증착되었으나, 증착온도와 r.f power가 증가함에 따라 free Si의 함량은 감소하였다. 증착온도 127$0^{\circ}C$, 유입가스비 R$_{x}$=0.04, r.f. power가 60W에서 비교적 결정성을 가진 3C-SiC막을 얻을 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.190-195
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• 2009

Na-tetrasilicic fluorine mica powders were synthesized by skull melting method. The staring materials having chemical composition of $Mg_3(OH)_2Si_4O_{10}:Na_2SiF_6:SiO_2=8.3:24.8:66.9$ mol% were charged into a cold crucible of 13 cm in diameter and 14cm in height and heated by R.F. generator at working frequency of 2.84 MHz. The materials were maintained for 1hr as a molten state and cooled down in the container. In this study, the specific electric resistance of mica was estimated and the columnar and plate shaped mica were synthesized.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.663-665
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• 1997

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.519-524
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• 2005

A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was tuned to reasonably predict the reactive ion etching behavior and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.194-195
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• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.