• Title/Summary/Keyword: $H_2O$ Plasma

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Structural, Optical and Electrical Properties of N-doped ZnO Nanofilms by Plasma Enhanced Atomic Layer Deposition (플라즈마 원자층 증착 방법을 이용한 N-doped ZnO 나노박막의 구조적.광학적.전기적 특성)

  • Kim, Jin-Hwan;Yang, Wan-Youn;Hahn, Yoon-Bong
    • Korean Chemical Engineering Research
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    • v.49 no.3
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    • pp.357-360
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    • 2011
  • N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.

Microwave Synthesis of Titanium Silicalite-1 Using Solid Phase Precursors

  • Kim, K.Y.;Ahn, W.S.;Park, D.W.;Oh, J.H.;Lee, C.M.;Tai, W.P.
    • Bulletin of the Korean Chemical Society
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    • v.25 no.5
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    • pp.634-638
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    • 2004
  • Titanium silicalite-1 (TS-1) molecular sieve was produced by microwave heating of amorphous titanium-containing solid precursors after impregnation with aqueous TPAOH solution. $SiO_2-TiO_2$ xerogel, sub-micron sized $SiO_2-TiO_2$ prepared by thermal plasma process, and Ti-containing mesoporous silica, Ti-HMS, were tested as the solid phase substrates. Highly crystalline product was obtained within 30 min. after microwave irradiation with yields over 90% using $SiO_2-TiO_2$ xerogel, which showed essentially identical physicochemical properties to TS-1 prepared by conventional hydrothermal method. Excellent catalytic activity was also obtained for 1-hexene epoxidation using $H_2O_2.\;SiO_2-TiO_2$ particles prepared by thermal plasma and Ti-HMS were found inferior as a substrate for TS-1, probably due to difficulties in wetting the surface uniformly with TPAOH.

A comparative study on the degradation of methyl orange, methylene blue and congo red by atmospheric pressure jet

  • Park, Ji Hoon;Yusupov, Maksudbek;Lingamdinne, Lakshmi Prasanna;Koduru, Janardhan Reddy;Bogaerts, Annemie;Choi, Eun Ha;Attri, Pankaj
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.190.1-190.1
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    • 2016
  • One of the most serious problems faced by billions of people today is the availability of fresh water. According to statistics, 15% of the world's total output of dye products is discharged into the environment as dye wastewater, which seriously pollutes groundwater resources. For the treatment of chemically and biologically contaminated water the advanced oxidation processes (AOPs) shows the promising action. The main advantage with AOPs is the ability to degrade the organic pollutants to $CO_2$ and $H_2O$. For this degradation process the AOPs generation of powerful and non-selective radicals that may oxidize majority of the organic pollutants present in the water body. To generate the various reactive chemical species such as radicals (${\bullet}OH$, ${\bullet}H$, ${\bullet}O$, ${\bullet}HO_2$) and molecular species ($H_2O_2$, $H_2$, $O_2$) in large amount in water, we have used the atmospheric pressure plasma. Among the reactive and non-reactive species, the hydroxyl radical (${\bullet}OH$) plays important role due to its higher oxidation potential (E0: 2.8 V). Therefore, in this work we have checked the degradation of various dyes such as methyl orange, methylene blue and congo red using different type of atmospheric pressure plasma sources (Indirect jet and direct jet). To check the degradation we have used the UV-visible spectroscopy, HPLC and LC-MS spectroscopy. Further, to estimate role of ${\bullet}OH$ on the degradation of dyes we have studied the molecular dynamic simulation.

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Plasma Treatments to Forming Metal Contacts in Graphene FET

  • Choi, Min-Sup;Lee, Seung-Hwan;Lim, Yeong-Dae;Yoo, Won-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.121-121
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    • 2011
  • Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

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Effects of $N_2O$/$SiH_4$Flow Ratio and RF Power on Properties of $SiO_2$Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD법에 의해 증착된 $SiO_2$후막 특성에서 $N_2O$/$SiH_4$Flow Ratio와 RF Power가 미치는 영향)

  • 조성민;김용탁;서용곤;임영민;윤대호
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.1037-1041
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    • 2001
  • Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

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HYDROGEN PLASMA DURABILITY OF $SnO_2$:F FILMS (불소 도핑 이산화주석 박막의 수소플라즈마 내구성)

  • Yoon, Kyung-Hoon;Song, Jin-Soo;kang, Kee-Hwan
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.847-849
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    • 1992
  • Fluorine-doped ($SnO_2$:F) thin films obtained by pyrosol deposition method have been exposed to R.F. excited pure hydrogen plasma under the following conditions; substrate temperature of 200$^{\circ}C$, $H_2$ pressure of 1 Torr, R.F. input power of 50 mW/$\textrm{cm}^{2}$, $H_2$ flow rate of 30cc/min and exposure time of 15-600 seconds. It is found that the sheet resistance of the films remains unchanged or rather slightly reduces for initial exposure time of 30-60 seconds, but increases sharply with further increasing the exposure time. The optical transmittance of $SnO_2$:F films slows a rapid fall with increasing exposure time except for a film obtained with a solution having $CH_3OH/H_2O$ mol ratio of 2.65, its degradations at the exposure time of 30-60 seconds are about 7-15%. In addition, the exposure of the films to hydrogen plasma atmosphere leads to remarkable changes in the microstructure and chemical composition, which should be attributed to the reduction of $SnO_2$ to SnO and to elemental Sn.

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optical emission spectra of microwave plasma (마이크로파 플라즈마의 광방출 스펙트럼)

  • Park, Sang-Hyun;Gu, Hyo-Keun;Sim, Jung-Bong;Kim, Kyoung-Hwan;Park, Jae-Yoon;Lee, Duck-Chool
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.895-897
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    • 1998
  • The optical spectra of microwave plasma by four kinds of gases($N_2$, $N_2-CH_4$, $H_{2}-CH_{4}$ and Air-$CH_4$) have been measured for investigating 388.4[nm] peak which has the same intensity as $H_{\alpha}$(656.4[nm]) peak. A 388.4[nm] peak by $N_2$ plasma, $N_{2}-CH_{4}$ plasma and Air-$CH_4$ plasma may be CN peak because it is with 337.1, 357.8 and 316.0[nm] peaks by $N_2$. And a 388.4[nm] peak by $H_{2}-CH_{4}$ plasma without by $N_2$ 337.1, 357.8 and 316.0[nm] peaks may be CH peak. In the investigation results for optical spectra by $H_{2}-CH_{4}$ plasma and $H_{2}-CH_{4}-O_{2}$ plasma, the density of hydrogen atom was increased because oxygen decompose hydrogen molecules in $H_{2}-CH_{4}$ plasma with oxygen. These hydrogen atom decompose $CH_4$ and increase CH radical. And the crystalline of deposited diamond was good and the growth rate increased.

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Decomposition Process of CFC by Thermal Plasma (열플라즈마에 의한 CFC의 분해공정)

  • Cha, Woo-Byoung;Choi, Kyung-Soo;Park, Dong-Wha
    • Applied Chemistry for Engineering
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    • v.9 no.6
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    • pp.829-834
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    • 1998
  • Concerned with environmental issue, a new decomposition method for CFCs that caused the destruction of ozone layer was proposed. Using thermal plasma process, CFC113 decomposed completely. In order to quantify the tendency in decomposition and recombination of CFC113, thermodynamic equilibrium calculations were performed. The calculation was conducted with CFC113, $H_2$, $O_2$ at 1 atm and 300 K~5000 K. In the experiment, products which are generated after decomposition in the plasma were examined by varying reacting gases($H_2$, $O_2$) flow rates and the changes of inside diameters of quenching tubes. Decomposition products were analyzed using Gas Chromatograph. The results are very promising with a decomposition efficiency greater than 99.99%. As to CFC113/$H_2$=1/3, conversion to CO decreased with increasing $O_2$ ratio. When CFC113/$O_2$=1/1, 1/1.5 and 1/2, conversion to CO increases above $H_2$ ratio of 3. The change of CO conversion is not sensitive to power changes. As total flow rate increased, CO conversion was slightly decreased. When the inside diameter of the quenching tube was changed from 8mm into 4mm, CO conversion was increased due to enhanced quenching rate.

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Surface Modification with Atmospheric Microwave Agron Plasma Jet Assisted with Admixture of H2O2 and Analysis of Plasma Characteristics

  • Won, I.H.;Shin, H.K.;Kwon, H.C.;Kim, H.Y.;Kang, S.K.;Lee, J.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.544-545
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    • 2013
  • Recently, low-temperature atmospheric-pressure plasmas have been investigated [1,2] for biomedical applications and surface treatments. Experiments for improving hydrophilicity of stainless steel (SUS 304) plate with atmospheric microwave argon and H2O2 mixture plasma jet [3] were carried out and experimental measurements and plasma simulations were conducted for investigating the characteristics of plasma for the process. After 30 s of low power (under 10 W) and low temperature (under $50^{\circ}C$) plasma treatment, the water contact angle decreased rapidly to around $10^{\circ}$ from $75^{\circ}$ and was maintained under $30^{\circ}$ for a day (24 hours). The surface free energy, calculated from the contact angles, increased. The chemical properties of the surface were examined by X-ray Photoelectron Spectroscopy (XPS) and the surface morphology and roughness were examined by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) respectively. The characteristics of plasma sources with several frequencies were investigated by Optical Emission Spectroscopy (OES) measurement and one-dimensional Particle-in-Cell (PIC) simulation and zero-dimensional global simulation [4]. The relation between plasma components and the efficacy of the surface modification were discussed.

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Improvement of Plasma Reactor Performance for Hydrogen Generation

  • Pavel, Kostyuk;Park, J.Y.;Kim, J.S.;Park, S.H.;Kim, Y.C.;Jeong, M.G.;Lee, H.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.519-520
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    • 2006
  • Research was performed to increase the efficiency of a plasma reactor for $H_2$ yield. In the preceding studies $H_2$ was increased by adding Ni as a transitional metal catalyst and $TiO_2$ as a photocatalyst. In these experiments, it was found that distilled water, discharge frequency, and electrode configuration had a significant impact on $H_2$ generation. A substantial amount of hydrogen yield was observed at 2 kHz of discharge frequency and 12 kV of applied voltage. Within this favorable discharge conditions, the weight rate of $TiO_2$ and Ni powders was investigated. Plasma phenomenon was measured by electrical, optical and acoustical devices. It was found that emitted light, electric current and acoustical signals acquired from the discharge demonstrated systematical correlation. Changing the electrode's configuration allowed discharge distribution along the perimeter of the electrode's tip, which increased the density of streamers and plasma energy loadings, as the value of inception voltage for the discharge propagation decreased.

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