• Biotechnology and Bioprocess Engineering:BBE
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• v.10 no.3
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• pp.270-274
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• 2005

A reactor-scale hydrogen (H2) production via the water-gas shift reaction of carbon monoxide (CO) and water was studied using the purple nonsulfur bacterium, Rhodopseudomonas palustris P4. The experiment was conducted in a two-step process: an aerobic/chemoheterotrophic cell growth step and a subsequent anaerobic $H_2$ production step. Important parameters investigated included the agitation speed. inlet CO concentration and gas retention time. P4 showed a stable $H_2$ production capability with a maximum activity of 41 mmol $H_2$ g $cell^{-1}h^{-1}$ during the continuous reactor operation of 400 h. The maximal volumetric H2 production rate was estimated to be 41 mmol $H_2 L^{-1}h^{-1}$, which was about nine-fold and fifteen-fold higher than the rates reported for the photosynthetic bacteria Rhodospirillum rubrum and Rubrivivax gelatinosus, respectively. This is mainly attributed to the ability of P4 to grow to a high cell density with a high specific $H_2$ production activity. This study indicates that P4 has an outstanding potential for a continuous H2 production via the water-gas shift reaction once a proper bioreactor system that provides a high rate of gas-liquid mass transfer is developed.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.4
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• pp.327-333
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• 2023

The water gas shift reaction was carried out using the commercial catalyst pellet and the simulated gases expected to occur from waste plastic gasification. In the water gas shift reaction, the high temperature shift reaction and the low temperature shift reaction were continuously performed with CO:H₂O ratio of 1:2, 1:2.5, and 1:3, and the CO conversion and H₂ increase rate were evaluated. The H₂ increase rate increased in order to CO:H₂O ratio of 1:3 > CO:H₂O ratio of 1:2.5 > CO:H₂O ratio of 1:2. The CO conversion showed a high value of more than 97% at each CO:H₂O ratio. The water gas shift reaction at a CO:H₂O ratio of 1:3 showed the highest H2 increase rate and CO conversion.

• Journal of Information Display
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• v.2 no.4
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• pp.29-33
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• 2001

The luminance and discharge characteristics of an AC PDP may be significantly affected by a small amount of impurity gas in working gas. Impurity gases such as $O_2$, O , C and $H_2$ can be mixed in the manufacturing and lor discharge processes. In this paper, a small amount of impurity gas in AC PDP are introduced intertimally and the relationship between the amount of impurity gas and the luminance/discharge characteristics are investigated. The luminous efficiency decreased seriously with the increase in the partial pressure of impurity gases, especially in $H_2$, $O_2$ and $CO_2$, Under the condition of the impurity gas ratio of 2x $10^{-3}$ for Ar, $N_2$, $H_2$, $CO_2$ and $O_2$, the luminous efficiency decreased to about 8%, 8%, 32%, 36% and 50%, respectively.

• Membrane Journal
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• v.28 no.4
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• pp.233-242
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• 2018

To study gas membrane using GO (graphene oxide), the PEBAX [poly(ether-block-amide)]-GO polymer composite membrane was prepared by adding GO to PEBAX. Through this composite membrane, gas permeation characteristics for $H_2$, $N_2$, $CH_4$, and $CO_2$ were studied. As a result of the gas permeation test, the permeability of $N_2$, $CH_4$, and $CO_2$ to PEBAX-GO composite membranes gradually decreased as the GO content increased. On the other hand, the gas permeability of $H_2$ increased with the increase of GO content, and it was 21.43 barrer at the GO content of 30 wt%, which was about 5 times higher than that of PEBAX membrane. This is because the GO was easier to operate with a fast and selective gas transport channel for $H_2$ than other gases. The increased selectivity ($H_2/N_2$) and selectivity ($H_2/CH_4$) were influenced by the diffusion selectivity by the permeate gas size. The increased selectivity ($CO_2/N_2$) and selectivity ($CO_2/CH_4$) were more influenced by the solubility selectivity due to the affinity of $CO_2$ and GO for -COOH.

• Journal of the Korean Society of Combustion
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• v.10 no.3
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• pp.10-16
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• 2005

Detailed flame structures of the counterflow flames of $CH_4/Air$ formed with $CO_2$ and $H_2O$ addition are studied numerically. The detailed chemical reactions are modeled by using the OPPDIF and CHEMKIN-II code. Only the $CO_2$ and $H_2O$ are assumed to participate in radiative heat transfer while all other gases are assumed to be transparent. The discrete ordinates method(DOM) and the narrow band based WSGGM with a gray gas regrouping technique(WSGGM-RG) are applied for modeling the radiative transfer through non-homogeneous and non-isothermal combustion gas mixtures generated by the counter flow flames. The results compared with the SNB model show that the WSGGM-RG is successful in modeling the counterflow flames with non-gray gas mixture. The numerical results show that the addition of $CO_2$ and $H_2O$ to the oxidant nozzle lowers the peak temperature and the NO concentration in flame.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.341-348
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• 1988

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$\Omega$cm at 50$0^{\circ}C$, and then rapidly increased to ~10$\Omega$cm at $700^{\circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{\circ}C$. Optimum operation temperature of sensing was 30$0^{\circ}C$ for H2 gas.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.70.2-70.2
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• 2012

Ram pressure is known as one of the most efficient mechanisms to deplete the atomic gas of galaxies in the cluster environment. However, the influence of the ram pressure on the molecular gas is not yet clear. Since the molecular gas resides in the galactic center, thus in the deeper potential well, and has higher surface density than the atomic hydrogen, it has been known as that the molecular gas is not easily affected and/or stripped away by the ICM-ISM interaction. To investigate the influence of the ram pressure on the gas properties of galaxies, we compare HI and $^{12}CO$(J=1-0) distribution of NGC 4654 which is experiencing on-going ram pressure and shows distinct HI, CO, optical, and $H_2$ features due to the ram pressure. We discuss the possibilities of H2 formation from HI by the ram pressure and also the star formation activities.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.1-5
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• 2000

Cathodoluminescence(CL) properties of ZnO:Zn green phosphor were investigated. ZnO:Zn phosphor was synthesized by varying reducing agents and firing temperatures. ZnS, charcoal and 5% H2 gas mixed with 95% N2 gas(5H2-95N2) were used as the reducing agent and atmosphere. The highest CL intensity of ZnO:Zn phosphor was observed under the condition of 5H2-95N2 atmosphere and firing temperature of 90$0^{\circ}C$ for 1h. Charocal and ZnO as reducing agents in the syntehsis of ZnO:Zn phosphor exhibited about 60% and 40%, respectively, of the CL intensity obtained with 5H2-95N2 atmosphere.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Journal of environmental and Sanitary engineering
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• v.4 no.2 s.7
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• pp.91-99
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• 1989

An anaerobic acidogenic fermentation experiment was carried out in order to investigate the distribution of volatile acid products and gas generations with varing temperatures and pH values. The experiment was carried out using $1\%$ glucose as substrate and a pair of 3.5 liter vessle as bench scale batch reactors. The reactors were operated for 7 days at 25, 30 and $35^{\circ}C$ and at pH values of 4.0, 4.5, 5.0, 5.5 and 6.0 at each temperature conditions. Major products at all experiment pH's at $35^{\circ}C$ were acetic acids and butyric acids which together composed around $90^{\circ}F$ of total product acids. At higher pH values at $35^{\circ}C$, propionic acid reached around $10\%$. At all experiment conditions, 52 to $55\%$ of generated gases comprised of hydrogen gas and 45 to $48\%$ of carbon dioxide. With temperature increase from 25 to $35^{\circ}C$, the production rate of acetic acid increased 2.9 fold, butyric acid 22 fold, hydrogen gas 2.0 fold and carbon dioxide gas 2.3 fold. Optimum reaction conditions for highest production of acetic acid and hydrogen gas was determined to be pH 5.5 at $35^{\circ}C$.