• Title/Summary/Keyword: $H_{2}$ gas sensor

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Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics (CBD 방법에 의한 CdS 박막의 성장과 광전도 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeoung, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.3-10
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    • 1993
  • Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Characterization of CdSe Thin Film Using Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeong, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.81-86
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    • 1993
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Characteristics of a planar Bi-Sb multijunction thermal converter with Pt-heater (백금 히터가 내장된 평면형 Bi-Sb 다중접합 열전변환기의 특성)

  • Lee, H.C.;Kim, J.S.;Ham, S.H.;Lee, J.H.;Lee, J.H.;Park, S.I.;Kwon, S.W.
    • Journal of Sensor Science and Technology
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    • v.7 no.3
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    • pp.154-162
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    • 1998
  • A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

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An experimental study on the cooling performance and the phase shift between piston and displacer in the Stirling cryocooler

  • Park, S. J.;Y. J. Hong;Kim, H. B.;D. Y. Koh;B. K. Yu;Lee, K. B.
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.1
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    • pp.111-117
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    • 2003
  • In the design of the split type free displacer Stilting cryocooler the motion of the displacer is very important to decide the cooling capacity, which depends upon the working gas pressure, the swept volume in the compression space and the expansion space, operating frequency, the phase shift between piston and displacer, etc. In this study, Stirling cryocooler actuated by the electric farce of the dual linear motor is designed and manufactured. Cool down characteristics of the cold end with laser displacement sensor in the expander of the Stilting cryocooler is evaluated. The charging pressure was 15kg$_{f}$/$\textrm{cm}^2$ and operating frequency was 50Hz. Input power and the lowest temperature were about 32W and 67K, respectively. And, displacement of the piston is measured by LVDTs (Linear Variable Differential Transformers), displacement of thedisplacer is measured by laser optic method, and phase shift between piston and displacer is discussed. As the peak-to-peak pressure of the compressor was increased, peak-to-peak displacement of the displacer was increased. The peak-to-peak displacement of the displacer increases in the range of 0 - 64.5Hz(resonant frequency of the displacer), but decreases steeply when the operating frequency is bigger than the resonant frequency. Finally when the phase shift between displacements of the Piston and displacer is 45。, operating frequency is optimum and is decided by resonant frequency of the expander, mass and cross section area of the displacer and constant by friction and flow resistance.e.

$TiO_2$ Thin Film Patterning on Modified Silicon Surfaces by MOCVD and Microcontact Printing Method

  • 강병창;이종현;정덕영;이순보;부진효
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.77-77
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    • 2000
  • Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

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Effect of Residual Chloride Ion on Thermal Decomposition Behaviour os Stannic Acid and Physical Properties of $SnO_2$ Powder Fabricated for Gas Sensor (가스센서용 $SnO_2$분말 제조시 잔류 염소이온이 Sn수화물의 열분해거동 및 분말물성에 미치는 영향)

  • Song, Guk-Hyeon;Choe, Byeong-U;Park, Jae-Hwan;Park, Sun-Ja
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.934-944
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    • 1994
  • Effects of residual chloride on thermal decomposition behaviour of a-stannic acid and physical properties of $SnO_{2}$ powder were observed. The powder was fabricated by hydroxide method; $\alpha$-stannic acid was precipitated by mixing acqueous solutions of $SnCl_{4}$ and $NH_{4}$OH . The precipitate was washed with $NH_{4}NO_{3}$ solution while washing was controlled to be of three grades to modify its residual chloride content. The precipitate was dried at $1100^{\circ}C$ ~ 24h and calcined in air at $500^{\circ}C$ ~ $1100^{\circ}C$ for one hour. Thermal decomposition behaviour of $\alpha$-stannic acid was examined by a DT-TGA and a FTIR. Chemical composition and physical properties of $SnO_{2}$ powder were observed by an AES, a BET and a TEM, respectively. With a reduction in chloride content, the relative crystallite size of $SnO_{2}$ powder slightly increased by a low-temperature-calcining. However, at a high calcining temperature(T), the reverse relation occured. It was suggested that chloride ion replaces part of lattice oxygen site of a-stannic acid. Also, chloride ion on the site was suggested to retard de-hydration as well as crystalization at a low T while to promote crystal growth of $SnO_{2}$ by forming oxygen vacancy at a high T.

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Development of Biofilter for Reducing Offensive Odor from Pig House (돈사 악취 저감을 위한 바이오필터 개발)

  • Lee, Seung-Joo;Lim, Song-Soo;Chang, Dong-Il;Chang, Hong-Hee
    • Korean Journal of Environmental Agriculture
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    • v.24 no.4
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    • pp.386-390
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    • 2005
  • This study was conducted to develop the biofilter fur reducing ammonia $(NH_3)$ and hydrogen sulfide $(H_2S)$ gas emission from a pig house. A biofilter was designed and constructed by a type of squeeze air into the column type of air flow upward. Its column size was ${\Phi}260{\times}360mm$. It was used pressure drop gauge, turbo blower, air temperature, velocity sensor and control program that was programed by LabWindows CVI 5.5. Mixing materials were consisted with composted pine tree bark and perlite with 7:3 ratio (volume). The biofilter media inoculated with ammonia (Rhodococcus equi A3) and hydrogen sulfide (Alcaligenes sp. S5-5.2) oxidizing microorganisms was installed in a commercial pig house to analyzed the effectiveness of biogas removal for 10 days. Removal rates of ammonia and hydrogen sulfide gases were 90.8% and 81.5%, respectively. This result suggests that the pine compost-perlite mixture biofilter is effective and economic for reducing ammonia ana hydrogen sulfide gases.

Growth and Opto-electric Characterization of ZnSe Thin Film by Chemical Bath Deposition (CBD(Chemical Bath Deposition)방법에 의한 ZnSe 박막성장과 광전기적 특성)

  • Hong, K.J.;You, S.H.
    • Journal of Sensor Science and Technology
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    • v.10 no.1
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    • pp.62-70
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    • 2001
  • The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

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