• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.156-156
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• 2011

Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were prepared by solvothermal reaction method for light emitting diode (LED) and field emission display (FED) applications. The XRD patterns of these phosphors confirmed their oxyapatite structure in the hexagonal lattice. The visible luminescence properties of these phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam. The photoluminescence (PL) properties of $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were investigated as a function of $Sm^{3+}$ concentration. Cathodoluminescence (CL) properties were examined by changing the acceleration voltage. The CGS : $Sm^{3+}$ showed the dominant orange emission due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition. The CGS : $Tb^{3+}/Sm^{3+}$ phosphor showed the green, white and orange emissions when excited with 275, 378, and 405 nm wavelengths, respectively. The chromaticity coordinates of these phosphors were comparable to or better than those of standard phosphors for LED or FED devices.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.36.1-36
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• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.145-152
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• 2006

The densification behavior and electrical conductivity of $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics were investigated with the strontium gallate concentration ranging from 0 to $5\;mol\%$. Both the sintered density and grain size were found to increase rapidly up to $0.5\;mol\%$ $Sr_2Ga_2O_5$, and then to decrease with further addition. Dense $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics with $97\%$ of the theoretical density could be obtained for $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen sintered at $1250^{\circ}C$ for 5 h, whereas pure $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics needed to be sintered at $1550^{\circ}C$ in order to obtain an equivalent theoretical density, Electrical conductivity was measured as a function of dopant content, over the temperature range of $350\;-\;600^{\circ}C$ in air. Total conductivity of $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen showed the maximum conductivity of $2.37{\times}10^{-2}{{\Omega}-1}{\cdot}cm^{-1}$ at $500^{\circ}C$, The addition of strontium gallate was found to promote the sintering properties and electrical conductivities of $Gd_2O_3$-doped $CeO_2$.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.521-526
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• 2015

$Ce_{0.8}Gd_{0.2}O_{1.9}$(GDC20) powder was prepared from a mixture of submicron-sized $CeO_2$ powder and Gd precipitates using ammonium carbonate $((NH_4)_2CO_3)$ as a precipitant. The mixture was calcined at $700^{\circ}C$ for 4 h followed by ball-milling that resulted in the GDC powder with an average particle size of $0.46{\mu}m$. The powder had a very uniform particle size distribution with particle sizes ranging from $0.3{\mu}m$ to $1{\mu}m$. Sintering of undoped GDC samples did not show a relative density of 99.2% until the temperature was increased to $1500^{\circ}C$, whereas GDC samples doped with 5 mol% CoO exhibited a significant densification at lower temperature reaching a relative density of 97.6% at $1100^{\circ}C$ and of 98.8% at $1200^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.374-377
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• 2009

The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

• Nuclear Engineering and Technology
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• v.52 no.6
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• pp.1099-1109
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• 2020

The performance of gadolinium burnable absorber (GdBA) for reactivity control in UO₂ and (U, Th)O₂ fuels and its impact on spent fuel characteristics was performed. Five fuel assemblies: one without GdBA fuel rod and four each containing 16, 24, 34 and 44 GdBA fuel rods in both fuels were investigated. Reactivity swing in all the FAs with GdBA rods in UO₂ fuel was higher than their counterparts with similar GdBA fuel rods in (U, Th)O₂ fuel. The excess reactivity in all FAs with (U, Th)O₂ fuel was higher than UO₂ fuel. At the end of single discharge burn-up (~ 49.64 GWd/tHM), the excess reactivity of (U, Th) O₂ fuel remained positive (16,000 pcm) while UO₂ fuel shows a negative value (-6,000 pcm), which suggest a longer discharge burn-up in (U, Th)O₂ fuel. The concentration of plutonium isotopes and minor actinides were significantly higher in UO₂ fuel than in (U, Th)O₂ fuel except for ²³⁶Np. However, the concentration of non-actinides (gadolinium and iodine isotopes) except for ¹³⁵Xe were respectively smaller in (U, Th)O₂ fuel than in UO₂ fuel but may be two times higher in (U, Th)O₂ fuel due to its potential longer discharge burn-up.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.652-658
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• 1997

The phase stability in the interface of Sr-doped LaMnO3(LSM)/Gd-doped CeO2(CGO) was examined in this study in order to check the feasibility of using LSM as the cathode material in a low-temperature SOFC(solid oxide fuel cell) using CGO as the electrolyte. For the purpose, CGO powders of Ce0.82Gd0.18O0.91 and two LSM powders having different compositions, La0.9Sr0.1MnO3(LSM10) and La0.5Sr0.5MnO3(LSM50), were synthesized using Pechini method. Then, specimens having the LSM/CGO interface were prepared, heat-treated at 130$0^{\circ}C$ for up to 3 days, and analyzed by XRD and STEM/EDX. Face-centered cubic CGO powders of less than 10 nm size were obtained by calcination of polymeric precursor formed in the process at 45$0^{\circ}C$. Higher calcination temperature of $700^{\circ}C$ was necessary for monoclinic LSM10 and cubic LSM50 powders. LSM powders were coarser than CGO and observed to be in the range of 50~100 nm. No trace of LSM-CGO interaction product was found in the XRD pattern. Also it was known from the concentration profile in the vicinity of the interface that interdiffusion was occurred over only a small penetration depth of ~100 nm order.

• Proceedings of the Korean Nuclear Society Conference
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• 2004.05a
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• pp.309.2-309.2
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• 2004

• Nuclear Engineering and Technology
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• v.33 no.3
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• pp.307-314
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• 2001

The changes of weight gain, structure, morphology and uranium oxidation states in l0wt% G $d_2$ $O_3$-doped U $O_2$ during the oxidation below 475$^{\circ}C$ and heat treatment at 130$0^{\circ}C$ in air were investigated using TGA, XRD, SEM, EPMA and XPS. The room temperature ( $U_{0.86}$G $d_{0.14}$) $O_2$Cubic Phase Converted to highly distorted ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type sing1e Phase by oxidation at 475 $^{\circ}C$ in air. This oxidized phase was reduced by annealing at 130$0^{\circ}C$ in air. The room temperature XRD pattern of the 130$0^{\circ}C$ annealed powder revealed that ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type single phase was separated into Gd-depleted $U_3$ $O_{8}$ and Gd-enriched ( $U_{0.7}$G $d_{0.3}$) $O_2$$_{+x}$ type cubic phase. The reduction and phase separation by the high temperature annealing of kinetically metastable and highly deformed ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type phase are interpreted in terms of cation size difference between G $d^3$$^{+}$ and U according to the oxidation state of U.U.U.U.U.te of U.U.U.U.U.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.10a
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• pp.269-269
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• 1998