• Title/Summary/Keyword: $Cu_xSe$

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Optical Properties of $CuAl_{1-x}Ga_xSe_2$ and $CuAl_{1-x}Ga_xSe_2:Co^{2+}$ Single Crystals ($CuAl_{1-x}Ga_xSe_2$$CuAl_{1-x}Ga_xSe_2 : Co^{2+}$ 단결정의 광학적 특성)

  • 진문석;김화택
    • Journal of the Korean Vacuum Society
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    • v.3 no.3
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    • pp.346-354
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    • 1994
  • 삼원화합물 반도체 CuAlSe2 및 CuGaSe2 단결정의 solid solution 인 CuAl1-xGaxSe2 및 cobalt를 2.0 mol% 첨가한 CuAl1-xGaxSe2 : Co2+ 단결정을 iodine을 수송물질로 사용한 화학수송법으로 성장시켰 다. source material로는 CuAl1-xGaxSe2 의 화학조성비에서 Se를 3.0mol% 과잉으로 첨가하여 합성한 ingot를 사용하였으며 불순물이 첨가된 CuAl1-xGaxSe2:Co2+ 단결정성장시에는 source ma-terial 에 cobalt 분말을 2.0mol% 첨가하였다. X-선 회절무늬로부터 성장된 단결정들이 chalcopyrite 결정구조를 하고 있음을 확인하였으며 격자상수를 구하였다. 광흡수 spectra 측정으로부터 성장된 단결정에서 나타 는 cobalt 불순물에 의한 광흡수 peak가 Td 대칭점에위치한 Co2+ 이온의 에너지 준위들간 전자전이에 의해 나타남을 규명하였다.

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Fabrication of $Cu_xSe$ thin films by selenization of $Cu_xSe$ nanoparticles prepared by a colloidal process (CIS 태양전지용 이원 화합물 $Cu_xSe$ 나노입자를 이용한 $Cu_xSe$ 박막 제조)

  • Kim, Kyun-Hwan;Ahn, Se-Jin;Yun, Jae-Ho;Gwak, Ji-Hye;Kim, Do-Jin;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.96-98
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    • 2009
  • This report summarizes our recent efforts to produce large-grained CIGS materials from porous nanoparticle thin films. In our approach, a $Cu_xSe$ nanoparticle colloid were first prepared by reacting a mixture of CuI in pyridine with $Na_2Se$ in methanol at reduced temperature. purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form thin film. After thermal processing of the thin film under a selenium ambient. $Cu_xSe$ colloid and thin film were characterized by scanning electron microscopy, x-ray diffraction. The optical(direct) band gap energy of $Cu_xSe$ thin films is 1.5 eV.

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Microstructure of Intermixed $Zn_{1-x}Fe_xSe$ Alloys in (ZnSe/FeSe) Superlattices ((ZnSe/FeSe) 초격자에 있어서 $Zn_{1-x}Fe_xSe$ 상호확산층의 미세구조)

  • Park, Kyeong-Soon
    • Applied Microscopy
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    • v.27 no.3
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    • pp.235-241
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    • 1997
  • The microstructure of intermixed $Zn_{1-x}Fe_xSe$ layers in the (ZnSe/FeSe) superstrates grown on (00l) GaAs substrates has been investigated by high -resolution transmission electron microscopy and computer simulations of lattice images. Computer image simulations have been performed by the multislice method under various sample thicknesses and defocusing conditions. The simulated lattice images were compared with the experimental lattice images. Also, CuAu-I type ordering was often observed in the intermixed $Zn_{1-x}Fe_xSe$ alloys. This CuAu-I type ordered structure consists of alternating ZnSe and FeSe monolayers along the <100> and <110> directions.

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Reactive Sputtering Process for $CuIn_{1-x}Ga_xSe_2$ Thin Film Solar Cells

  • Park, Nae-Man;Lee, Ho Sub;Kim, Jeha
    • ETRI Journal
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    • v.34 no.5
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    • pp.779-782
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    • 2012
  • $CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

Microstructure of $\textrm{Zn}_{1-x}\textrm{Fe}_{x}\textrm{Se}$ Epilayers Grown by Molecular Beam Epitaxy (MBE에 의해 성장된 $\textrm{Zn}_{1-x}\textrm{Fe}_{x}\textrm{Se}$ 반도체 박막의 미세구조)

  • Park, Gyeong-Sun
    • Korean Journal of Materials Research
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    • v.7 no.9
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    • pp.805-810
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    • 1997
  • MBE에 의해 성장된 Zn$_{1-x}$ Fe$_{x}$Se박막의 미세구조가 고분해능 투과전자현미경에 의해 연구되었다.Zn$_{1-x}$ Fe$_{x}$Se 박막에서 CuAu-l과 CuPt의 규칙격자가 발견되었다. 이 규칙격자는 전자 회절과 단면 고분해능 격자 이미지에 의해 조사되었다.CuAu-l규칙격자는 (001)InP기판 위에 성장된 Zn$_{1-x}$ Fe$_{x}$Se(x=0.43)에서 관찰되었고, 반면에 CuPt규칙격자는 (001)GaAs기판 위에 성장된 Zn$_{1-x}$ Fe$_{x}$Se(x=0.43)에서 관찰되었다.43)에서 관찰되었다.

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Crystal Growth and Characterization of the Solid Solution $(ZnSe)_{1-x}(CuMSe_2)_x$ (M-Al, Ga, or In)

  • 이완인;도영락
    • Bulletin of the Korean Chemical Society
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    • v.16 no.7
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    • pp.588-591
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    • 1995
  • Single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were grown by chemical vapor transport technique. Powdered polycrystalline samples of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were also prepared by the direct combination of the elements. The chemical composition of these single crystals was determined by comparing their lattice parameters with those of the standard polycrystalline samples. The IR transmission range of single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) is slightly narrower than that observed for pure ZnSe. However, these materials still show good transmission in the long-wavelength IR range. The addition of small amounts of CuMSe2 (M=Al, Ga, or In) considerably increases the hardness of ZnSe.

Effects of Ag Content on Co-evaporated Wide Bandgap (Ag,Cu)(In,Ga)Se2 Solar Cells (Ag 함량이 진공증발법으로 형성된 광금지대 (Ag,Cu)(In,Ga)Se2 태양전지에 미치는 영향)

  • Park, Joo Wan;Yun, Jae Ho;Cho, Jun Sik;Yu, Jin Su;Lee, Hi-Deok;Kim, Kihwan
    • Current Photovoltaic Research
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    • v.3 no.1
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    • pp.16-20
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    • 2015
  • Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of $Cu(In,Ga)Se_2$-based solar cells has been investigated. Wide bandgap $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters $V_{OC}=0.810V$, $J_{SC}=21.7mA/cm^2$, and FF = 69.0%.

Physical Properties with Cu/(In+Ga) Ratios of Cu(InGa)$Se_2$ Films (Cu(InGa)$Se_2$ 박막의 Cu/(In+Ga) 조성비에 따른 전기적 물성특성)

  • Kim, S.K.;Lee, J.L.;Kang, K.H.;Yoon, K.H.;Song, J.;Park, I.J.;Han, S.O.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1584-1586
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    • 2002
  • CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

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Preparation of Seleinzed CuInSeS12T Thin Films P-type Conductivity (P형 전기전도도 특성을 갖는 $Selenized CuInse_2$ 박막의 제조)

  • 박성;김선재
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.2
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    • pp.296-302
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    • 1994
  • Polycrystalline CuInSeS12T thin were prepared by depositing Cu/In layer, which was sequentially sputtered varying the Cu/(Cu+In) mole ratio, on glass substrate and selenizing with selenium metal vapor in a nitrogen atmosphere. Compositional and structural, characterization was carried out by X-ray diffraction (XRD), wavelength-dispersive spectroscopy(WDS), and scanning electron microscope(SEM). Electrical characterization was carried out by the measurements of Hall effect, electrical resistivity. Large indium loss occurs in early stage of the selenization process. The selenized films which had mole ratios larger than 0.28 have chalcopyrite CuInSeS12T phase and these that had less mole ratios have sphalerite phase. The selenized films containing CuS1xTSe phase have Cu-rich CuInSeS12T phase and these that did not contain CuS1xTSe have In-rich CuInSeS12T phase. By optimizing the sputtering conditions,it is possible to fabricate CuInSeS12T thin films which have little secondary phases and an appropriate hole concentration (10S015T ~ 10S016TcmS0-3T) for solar cells.