• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.102-109
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• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.11-18
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• 2014

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.113-117
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• 2018

Effects of annealing temperature on the microstructure and mechanical properties through thickness of a cold-rolled Cu-3.0Ni-0.7Si alloy were investigated in detail. The copper alloy with thickness of 3 mm was rolled to 50 % reduction at ambient temperature without lubricant and subsequently annealed for 0.5h at $200{\sim}900^{\circ}C$. The microstructure of the copper alloy after annealing was different in thickness direction depending on an amount of the shear and compressive strain introduced by rolling; the recrystallization occurred first in surface regions shear-deformed largely. The hardness distribution of the specimens annealed at $500{\sim}700^{\circ}C$ was not uniform in thickness direction due to partial recrystallization. This ununiformity of hardness corresponded well with an amount of shear strain in thickness direction. The average hardness and ultimate tensile strength showed the maximum values of 250Hv and 450MPa in specimen annealed at $400^{\circ}C$, respectively. It is considered that the complex mode of strain introduced by rolling effected directly on the microstructure and the mechanical properties of the annealed specimens.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.289-292
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• 1993

[Ni/Fe/Cu] and [Fe/Ni/Fe/Cu] multilayers were prepared with three gun rf-magnetron sputtering, and dependence of magnetoresistance on the Ni IFe thickness ratio was investigated. Vaccum annealing was tried to invetigated the effect of annealing. Oscillation of magnetoresistance on the Cu spacer thickness was dbserved in these two kinds of multilayers. When the thickness of Fe inserted into the Ni/Cu interface was about $3\;\AA$. the maximum value of magnetoresistance(13 %) could be observed. In a sample of $1~2\;\AA$ Fe thickness, saturation field decreased significantly, while magnetoresistace decreased slightly in comparison with the sample of $3\;\AA$ Fe. In ${[Cu(23\;\AA)/Fe(1\;\AA)/Ni(18\;\AA)/Fe(1\;\AA)]}_{20}/Fe(80\;\AA)/Si$, 6 % magnetoresistance with 100 Oe saturation field could be obtained. No appreciable change in magnetoresistance and saturation field could be observed by low temperature annealing. Formation of Ni-Fe alloy was not confinred.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.112-118
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• 2018

In order to meet the strict emission regulations for internal combustion engines based on fossil fuel, the proportion of after-treatments for vehicles and vessels is gradually increasing. Diesel engines have high power, good fuel economy, and lower $CO_2$ emissions, and their market shares are increasing in commercial vehicles and passenger cars. However, NOx is generated in the localized high-temperature combustion regions, and particulate matter is formed in the zones of diffusion combustion. LNT and urea-SCR catalysts have been developed for after-treatment of the exhaust gas to reduce NOx in diesel vehicles. This study aims to improve the NOx reduction performance of Cu SCR catalyst, which is widely used in light, medium, and heavy-duty diesel engines. The de-NOx performance of $5Cu-2ZrO_2$/93Zeolyst(Si/Al=13.7) SCR catalyst was about 5-50% higher than that of $5Cu-2ZrO_2$/93Zeolite(Si/Al=2.9) at catalyst temperatures of $300^{\circ}C$ or higher. The zeolite had lower metal dispersion than zeolyst, and the reaction rate of the catalyst decreased as the average particle size increased. The $10Cu-2ZrO_2$/88Zeolyst catalyst loaded with 10wt% Cu had the highest NOx conversion rate of 40% at $200^{\circ}C$ and about 65% at $350^{\circ}C$. The ion exchange rate of Cu ions increased with that of Al, the crystalline compound of zeolite, and the de-NOx performance was improved by 20-40% compared to other catalysts.

• International Journal of Advanced Culture Technology
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• v.3 no.2
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• pp.132-137
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• 2015

The purpose of this paper was to investigate the effects of solution treatment time and Sr-modification on the microstructure and property of the Al-Si piston alloy. It was found that as-cast microstructures of unmodified and Sr-modified Al-Si alloys consisted of a coarse acicular plate of eutectic Si, $Cu_3NiAl_6$ and $Mg_2Si$ phases in the ${\alpha}$-Al matrix but different in size and morphology. Both size and inter-particle spacing of Si particles were significantly changed by increasing of the solution treatment time. After a short solution treatment, the coarse acicular plate of the eutectic Si appears to be fragmented. Fully modified microstructure of Sr-modified alloy can reduce the solution treatment time to shorter compared to unmodified alloy. The maximum of a peak hardness value is found in the very short solution treatment of both Al-Si piston alloys. Compared to 10 h solution treatment, the solution treatment of 2-4 h is sufficient to achieve appropriate microstructures and hardness. The short solution treatment is very useful to increase the productivity and to reduce the manufacturing cost of the Al-Si piston alloys.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.213-219
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• 1994

Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.314-319
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• 1993

The Effects of additional element X (X = Si, Mo, Cu, Gd) on magnetic properties and microstructure of Co-1Zat%Cr-Zat%Ta/Cr-X magnetic thin film were investigated. The thickness changes of Cr-X underlayer and CoCrTa magnetic layer were in the range of $1000~2000\AA$ and $200~800\AA$. respectively. Substrate temperatures were controlled from $100^{\circ}C$ to $200^{\circ}C$. Increase of coercivity by about 100~200 Oe was observed in CoCrTa/Cr-X thin films compared to those without additional X element. Cu was the most effective additional element for increasing coercivity. CoCrTa/Cr-Cu thin film shows relatively high coercivity in $1500\AA$ underlayer thickness and $600\AA$ magnetic layer thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.235-235
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• 2010

장비와 cutting기술의 발전으로, 높은 효율성을 지닌 어려운 작업 재료들의 고속 건조 가공기술은 생산성, 가격 인하 그리고 환경적인 관점에서 중요성이 증가하게 되었다. AlTiN에서 Si의 첨가는 40GPa이상의 고경도와 1000도 이상의 산화온도를 지닌 나노혼합물 코팅을 형성시키는 것으로 알려졌다. 또한 Si가 아닌 다른 soft 물질을 첨가하고 3성분 이상의 다성분계 박막을 형성하는 실험을 하여, 물성이 어떻게 달라지는지 확인하였다. 특히, 나노 코팅층 형성이 매우 어려운 Al-Ti-N 합금계에서 Si, Cu 첨가의 영향 및 이러한 코팅층 형성을 단일합금을 이용하여 행하였을 때, 장점을 확인하였다. 이러한 연구를 위하여 Ti-Al의 합금 조성을 경도가 가장 우수한 것으로 알려진 50 : 50으로 하여 타겟을 만들고 증착시켜 기초실험을 진행하여 물성조건을 확인하고 이에 근거하여 실험을 진행하였다. 또한 3 원계 합금으로서 Cu, Si를 첨가한 연구를 수행하였다. 또한, 최적 조성의 합금 조성을 확인한 후, 단일 합금 타겟을 제조하였으며 이를 이용하여 형성된 코팅층과 다성분계 타겟을 이용한 박막의 물성을 비교하였다. 증착된 박막의 분석장비로는 SEM, EDS, XRD 와 AFM등을 이용하였으며, 막의 조직과 증착 두께, 조도 그리고 경도를 확인하고 막의 물성 특성이 향상됨을 입증하였다.