• Clean Technology
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• v.5 no.2
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• pp.63-68
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• 1999

The activities of Ni(20wt%)/$La_2O_3$, Ni(20wt%)/${\gamma}-Al_2O_3$, and Ni(20wt%)/$SiO_2$ catalyst for $CO_2$ reforming of $CH_4$ were investigated in a fixed bed flow reactor under atmospheric condition. Catalyst characterization using XRD, TEM, SEM, BET analysis were also conducted. The catalytic activity of Ni(20wt%)/$La_2O_3$ catalyst has relatively superior to that of Ni(20wt%)/${\gamma}-Al_2O_3$ and Ni(20wt%)/$SiO_2$ catalyst. The good activity of Ni(20wt%)/$La_2O_3$ catalyst seems to depend on reduced $Ni^{\circ}$ phases of NiO($\rightarrow$ Ni + O), $LaNiO_3$($\rightarrow$ $Ni+La_2O_3$), Ni crystalline phases, and decoration of Ni phases by lanthanum species is also an important factor. Ni(20wt%)/${\gamma}-Al_2O_3$ and Ni(20wt%)/$SiO_2$ catalyst due to surface acidity resulted in the deposition of wisker type and encapsulate carbon on the surface of catalyst, but Ni(20wt%)/$La_2O_3$ catalyst did not show carbon on the surface of catalyst up to 8.5hr reaction.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.10-10
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• 1996

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1044-1050
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• 2000

ZnO-Pr$_{6}$O$_{11}$-Co$_3$O$_4$-CaO 사성분계에 SiO$_2$를 0.4at%까지 첨가하여 1180, 1200 및 125$0^{\circ}C$에서 소성하여 미세구조 및 전기적인 특성을 조사하였다. 소성온도 120$0^{\circ}C$ 이상에서 치밀한 시편을 얻을 수 있었고, Si는 주로 입계에 분포하고 있으며, SiO$_2$첨가는 결정립성장을 억제하였다. 이 현상은 고상소결만이 일어나 120$0^{\circ}C$에서 소결된 시편과 액상소결이 일어난 125$0^{\circ}C$에서 소결된 시편 모두에서 관찰되었으며, SiO$_2$첨가에 의한 기공의 증가에 기인하는 것으로 판단된다. SiO$_2$의 첨가에 의해 바리스터의 비선형계수가 크게 변화하였으며, 시편의 소성과정이 고상소결인 경우 비선형계수가 증가한 반면 액상소결인 경우에는 감소하였다. 적절한 양의 SiO$_2$(약 0.3at%)를 첨가하여 액상이 형성되지 않는 120$0^{\circ}C$에서 소성하여 80 이상의 비선형계수를 갖는 바리스터를 제조할 수 있었다.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.279-282
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• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• Journal of Environmental Science International
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• v.22 no.9
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• pp.1097-1103
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• 2013

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.166-166
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• 2013

Mesoporous $SiO_2$-supported Ni catalysts (Ni/$SiO_2$ and Ni/$TiO_2$/$SiO_2$) were fabricated by atomic layer deposition (ALD), and their catalytic activity and stability were investigated in carbon dioxide reforming of methane (CRM) reaction at $800^{\circ}C$ The Ni/$SiO_2$ catalysts showed high stability as a result of confinement of Ni particles with a mean size of ~10 nm within the pores of $SiO_2$ support. Besides, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) results showed that the Ni nanoparticles were partially buried inside the $SiO_2$ support. The strong interaction between Ni and the $SiO_2$ support could also be advantageous for long-term stability of the catalyst. In case of the Ni/$TiO_2$/$SiO_2$ catalyst, it was found that the catalytic activity of 10 nm-sized Ni nanoparticles was not much influenced by $TiO_2$ addition.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.215-218
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• 2005

Co-interlayer와 $SiO_2$ 상부막이 nickel germanosilicide 박막의 열안정성에 미치는 영향을 연구하였다. Nickel germanosilicide는 SiGe 기판 위에 Ni(8nm)/TiN(25nm), Ni(6m)/Co(2nm)/TiN(25nm)을 증착하여 각각 one step RIP($500^{\circ}C$)와 two step RTP(500. $700^{\circ}C$)로 형성되었다. 50과 10nm 두께의 $SiO_2$ 박막을 실리사이드 위에 증착하고, 550, 600, $650^{\circ}C$에서 30분간 열처리한 후 면저항 값을 측정하여 열안정성을 평가하였다.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.163-169
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• 2024

As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO₂ hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO₂ composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)₂ precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO₂ substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1101-1106
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• 1998

Various $Zn_{2-x}SiO_4$:xMn based green phosphors were investigated in association with a co-dopant. The co-dopant incorporated into the phosphors are believed to alter the internal energy state of $Zn_{2-x}SiO_4$ : xMn So that the improvement in their intensity could be expected. Phosphor samples were prepared using the solid state reaction therein raw powders are mixed in the acetone and successively fired at $1300^{\circ}C$ for 4 hour. The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmoshpere and thereby giving The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmosphere and thereby giving rise to conspicuous enhancement of radiative efficiency. Basically the 0.08 mole ratio of the Mn con-centrations has the maximum value of the intensity so that a co-dopant are added to this Mn con-centration. When the Mg is co-doped with Mn luminescent intensity is proven to be promoted significantly.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.62-63
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• 1993

Salicide(Self-aligned) CoSi$_2$의 형성을 알아보기 위하여, 단결정 실리콘 기판내에 불순물 주입에 따른 실리사이드의 형성영향을 알아보는, As,BF$_2$를 주입 한 시편과, 코발트와 SiO$_2$를 증착한 시편을 준비하였다. RF sputtering 방식으로 각각의 기판위에 코발트를 증착 한 후 Rapid Thermal Annealing(RTA) 온도 400-100$0^{\circ}C$영역에서 20초 동안 열처리 하였다. RTA 온도 80$0^{\circ}C$에서 비저항이 약 18$\mu$$\Omega$-cm정도의 CoSi$_2$를 형성 시켰으며 SEM 과 $\alpha$-step 으로 확인된 Si 기판과 코발트 실리사이드의 계면 roughness 및 surface roughness는 우수하였고, CoSi$_2$의 두께 증가에 따른 실리콘 소모량의 증가에 따라 기판내에 있던 As,BF$_2$ 이온들이 실리사이드내로 재분포 되는 현상을 보였다.CoSi$_2$/Si 계면간의 열적안정성은 $N_2$분위기로 30분간 Furnace Annealing 온도 100$0^{\circ}C$까지 CoSi$_2$의 응집화 현상이 일어나지 않았다.