• 한국세라믹학회지
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• 제27권5호
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• 한국진공학회지
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• 제7권2호
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• pp.155-160
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• 1998

256M DRAM급에 해당하는 0.25$\mu\textrm{m}$의 회로선 폭을 가공하기 위해 Arc layer & DUV resist 사용이 필수적이다. Poly-Si 식각시 Arc layer 적용여부 및 resist 종류에 따른 차이 를 TCP-9408 etcher(Lam Research Co.)에서 $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr 3가지 gas chemistry 를 변화시키면서 조사하였다. 동일한 식각 조건에서 DUV resist사용의 경우에 I-line resist 에 비해 식각 profile이 profile이 positive하고 CD gain도 크게 나왔다. 이것은 resist손실에 의한 polymer생성의 증가가 식각시 측벽 보호막을 강화시키기 때문이다. Arc layer 적용의 경우 Arc layer 식각시 생기는 fluorine계 polymer가 poly-Si 식각시 mask역할을 하므로 CD gain이 증가하는 것으로 나타났다. Gas chemistry에 의한 영향은 $Cl_2/O_2$의 경우가 식각 시 polymer형성을 촉진시켜 positive profile 및 CD gain을 초래하였다. $Cl_2$/HBr의 경우에는 profile이 vertical 하였고 CD gain도 거의 없었다. 또한 dense pattern 과 isolated pattern 사이의 profile 및 CD 차이도 가정 작게 나타났다. HBr gas 사용이 식각시 pattern density 에 따른 측벽 보호막 형성의 불균일성을 최소화 시켜 양호한 특성을 보여주었다.

• 한국식품영양학회지
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• 제35권4호
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• pp.247-252
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• 2022

To improve the shelf-life of Centella asiatica, Centella asiatica was treated with gel packs containing slow-released chlorine dioxide (ClO₂) gas at 3-5 ppm for 20 days at 4℃. The weight loss rate, as well as the changes in pH, color, and texture of the treated samples, were investigated. The weight of the control and ClO₂ gas-treated samples was decreased during the storage period. The change in weight of the control was slightly faster than that of the samples treated with 3 and 4 ppm ClO₂ gas. The pH of the control and the ClO₂ gas treated samples were decreased during the storage period and there was no significant difference between the control and ClO₂ gas treated samples. Concerning color (lightness, redness, and yellowness) changes of Centella asiatica during the storage period, there was no significant difference between the control and ClO₂ gas treated samples. The change in shear force in the leaf and stem of Centella asiatica during the storage period was slightly lower in the 4 ppm ClO₂ gas treated samples (in the leaf) compared to the control and 3 and 4 ppm ClO₂ gas treated samples (in the stem) compared to the control and 5 ppm ClO₂ gas treated sample.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.634-639
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• 2001

We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

• 한국식품영양학회지
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• 제31권2호
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• pp.308-312
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• 2018

Even though chlorine dioxide ($ClO_2$) is utilized in a pre-treatment due to its effective sterilizing activity for microorganisms and its safety for food, it has a limitation in maintaining freshness of the food product. In this study, a low-concentration $ClO_2$ gas was produced in a packaging form of air-permeable gel pack so that it could be released continuously over several days. The amount of $ClO_2$ gas emission and microbial inactivation effect against foodborne pathogens were measured during the release of $ClO_2$ gas. As a result of measuring the change of color in order to confirm whether the chlorine dioxide gas was eluted in the form of a sustained release, the yellowness was significantly higher at higher gel pack concentration and higher value during storage periods. The slow-released $ClO_2$ gel-pack showed clear inactivation effect against Escherichia coli and Staphylococcus aureus with 99.9% inactivation efficiency. As a result of measuring the sterilization effect of Listeria monocytogenes by the concentration of chlorine dioxide gas, the sterilization effect was increased as the concentration was increased. Therefore, the slow-released $ClO_2$ gel-pack is feasible to apply for industry usages.

• Tribology and Lubricants
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• 제23권6호
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• pp.261-265
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• 2007

Carbide-derived carbon coating has been synthesized by low temperature treatment of TiC disk with $H_2/Cl_2$ mixture gases. A variety of physical measurements indicated that Ti was extracted and carbon layer was formed by exposure of $Cl_2$ gas. The $I_D/I_G$ ratio increased with increasing $Cl_2$ gas concentration. Wear coefficient and frictional coefficient varied with $Cl_2$ gas concentration. When the $Cl_2$ gas concentration decreased to 3.3 vol%, the friction coefficient approach a minimum. The results showed that degree of graphite crystallinity and variation of porosity due to the $Cl_2$ gas content were responsible for different tribology performance.

• 전자공학회논문지D
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• 제36D권5호
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• pp.29-35
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• 1999

Pt박막의 ICP 식각을 위한 Cl\sub 2 \/Ar 가스 플라즈마에 O\sub 2\ 가스를 첨가하여 Pt 식각 메카니즘을 XPS와 QMS로 조사하였다. 또한 single Langmuir probe를 사용하여 이온전류밀도를 Ar/Cl\sub 2 \/O\sub 2\ 가스 플라즈마에서 측정하였다. O\sub 2\가스 첨가비가 증가할수록 Cl과 Ar species가 급격하게 감소하고 이온전류밀도 역시 감소함을 QMS와 single Langmuir probe로 확인하였다. Pt 식각율의 감소는 O\sub 2\가스 첨가비가 증가할수록 반응성 species와 이온전류밀도의 감소에 기인함을 의미한다. 150 nm/min의 치대 식각율과 2.5의 산화막식각 선택비가 50 sccm의 Ar/Cl\sub 2 \/O\sub 2\ 가수 유량, 600 W의 RF 전력, 125 V의 dc 바이어스 전압 및 10mTorr의 반응로 압력에서 얻었다.

• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 한국세라믹학회지
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• 제29권12호
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• 한국표면공학회지
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• 제30권2호
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• pp.111-120
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• 1997

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.