• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• The Korean Journal of Food And Nutrition
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• v.35 no.4
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• pp.247-252
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• 2022

To improve the shelf-life of Centella asiatica, Centella asiatica was treated with gel packs containing slow-released chlorine dioxide (ClO₂) gas at 3-5 ppm for 20 days at 4℃. The weight loss rate, as well as the changes in pH, color, and texture of the treated samples, were investigated. The weight of the control and ClO₂ gas-treated samples was decreased during the storage period. The change in weight of the control was slightly faster than that of the samples treated with 3 and 4 ppm ClO₂ gas. The pH of the control and the ClO₂ gas treated samples were decreased during the storage period and there was no significant difference between the control and ClO₂ gas treated samples. Concerning color (lightness, redness, and yellowness) changes of Centella asiatica during the storage period, there was no significant difference between the control and ClO₂ gas treated samples. The change in shear force in the leaf and stem of Centella asiatica during the storage period was slightly lower in the 4 ppm ClO₂ gas treated samples (in the leaf) compared to the control and 3 and 4 ppm ClO₂ gas treated samples (in the stem) compared to the control and 5 ppm ClO₂ gas treated sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.634-639
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• 2001

We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

• The Korean Journal of Food And Nutrition
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• v.31 no.2
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• pp.308-312
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• 2018

Even though chlorine dioxide ($ClO_2$) is utilized in a pre-treatment due to its effective sterilizing activity for microorganisms and its safety for food, it has a limitation in maintaining freshness of the food product. In this study, a low-concentration $ClO_2$ gas was produced in a packaging form of air-permeable gel pack so that it could be released continuously over several days. The amount of $ClO_2$ gas emission and microbial inactivation effect against foodborne pathogens were measured during the release of $ClO_2$ gas. As a result of measuring the change of color in order to confirm whether the chlorine dioxide gas was eluted in the form of a sustained release, the yellowness was significantly higher at higher gel pack concentration and higher value during storage periods. The slow-released $ClO_2$ gel-pack showed clear inactivation effect against Escherichia coli and Staphylococcus aureus with 99.9% inactivation efficiency. As a result of measuring the sterilization effect of Listeria monocytogenes by the concentration of chlorine dioxide gas, the sterilization effect was increased as the concentration was increased. Therefore, the slow-released $ClO_2$ gel-pack is feasible to apply for industry usages.

• Tribology and Lubricants
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• v.23 no.6
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• pp.261-265
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• 2007

Carbide-derived carbon coating has been synthesized by low temperature treatment of TiC disk with $H_2/Cl_2$ mixture gases. A variety of physical measurements indicated that Ti was extracted and carbon layer was formed by exposure of $Cl_2$ gas. The $I_D/I_G$ ratio increased with increasing $Cl_2$ gas concentration. Wear coefficient and frictional coefficient varied with $Cl_2$ gas concentration. When the $Cl_2$ gas concentration decreased to 3.3 vol%, the friction coefficient approach a minimum. The results showed that degree of graphite crystallinity and variation of porosity due to the $Cl_2$ gas content were responsible for different tribology performance.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.29-35
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• 1999

Inductively coupled plsama etching of platinum thin film was studied using $O_2$ addition to $Cl_2$/Ar gas plasma. In this study, Pt etching mechanism was investigated with Ar/$Cl_2$ /$O_2$ gas plasma by using XPS and QMS. Ion current density was measured with Ar/$Cl_2$ /$O_2$ gas plasma by using single Langmuir probe. It was confirmed by using QMS and single Langmuir probe that Cl and Ar species rapidly decreased and ion current density was also decreased with increasing $O_2$ gas ratios. These results implied that the decrease of Pt etch rate is due to the decrease of reactive species ans ion current density with increasing $O_2$ gas mixing ratios. A maximum etch rate of 150nm/min and the oxide selectivity of 2.5 were obtained at Ar/$Cl_2$ /$O_2$ flow rate of 50 seem, RF power of 600 W, dc bias voltage of 125 V, and the total pressure of 10 mTorr.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.111-120
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• 1997

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.