• Title/Summary/Keyword: $C_6H_6/Ar/O_2$

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Synthesis of ArOTiCl3 complexes and their application for ethylene polymerization and copolymerization

  • Wang, Jianwei;Ren, Yingchun;Xu, Sheng;Mi, Puke
    • Advances in materials Research
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    • v.6 no.3
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    • pp.303-316
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    • 2017
  • In this article, novel olefin polymerization catalyst with lower cost and simple synthetic process were developed, $ArOTiCl_3$ complexes [$(2-OMeC_6H_4O)TiCl_3(C1)$, $(2,4-Me_2C_6H_3O)TiCl_3(C2)$, $TiCl_3(1,4-OC_6H_4O)TiCl_3(C3)$, $TiCl_3(1,4-OC_6H_2O-Me_2-2,5)$ $TiCl_3(C4)$] and corresponding $(ArO)_2TiCl_2$ complexes [$TiCl_2(OC_6H_4-OMe-2)_2(C5)$ and $TiCl_2(OC_6H_3-Me_2-2,6)_2(C6)$] have been synthesized by the reaction of $TiCl_4$ with phenol, all these complexes were well characterized with $^1H$ NMR, $^{13}C$ NMR, MASS and EA. When combined with methylaluminoxane (MAO), the $ArOTiCl_3/MAO$ system shows high activity for ethylene copolymerization with 1-octene and copolymer was obtained with broaden molecular weight distribution (MWD). The $^{13}C$ NMR result of polymer indicates that the 1-octene incorporation in polymer reached up to 8.29 mol%. The effects of polymerization temperature, concentration of polymerization monomer and polymerization time on the catalytic activity have been investigated.

The relations between second-stage temperatures and gases partial pressures at the stainless steel high vacuum chamber by cryogenic pumping (크라이오 펌프를 이용한 스테인레스 스틸 고진공용기 배기에서 2차 냉각판 온도와 용기 내부의 기체 부분압 관계)

  • Hong S. S.;Lim J. Y.;Shin Y. H.;Chung K. H.;Arakawa Ichiro
    • Journal of the Korean Vacuum Society
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    • v.13 no.4
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    • pp.139-144
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    • 2004
  • Recently, the importance of clean vacuum and partial pressure measurement of gas species has been increased in the vaccum process. In this study, the partial pressures of $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$(CO), Ar, $CO_2$ were measured by residual gas analyzer according to temperature of cryogenic pump which is used to clean vacuum generation and compared. The experimental results showed that the cryopanel temperature was reached to 12K after 72 minutes of pumping and after 25hours, the partial pressures in percent were 24.9 %, 6.6%, 5.5 %, 2.2 %, 3.8%, 30.7%, 6.5%, 6.1 %, 5.5%, 8.2% for $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$, Ar, $CO_2$ respectively. The dominant gases were $H_2$ and $H_2O $, and the partial pressures were relatively high compare to other gases.

Kinetics and Dynamics on Inhibition Effect of Chlorinated Hydrocarbon in Combustion Reaction: The Inhibition Effect of $CH_3Cl$ on the Ignition of $C_2H_6$ (염소계 탄화수소의 연소 억제 효과에 관한 반응속도 및 동력학 연구: $C_2H_6$ 점화 과정에서 $CH_3Cl$ 억제 효과)

  • Shin, Kuan Su;Kang, Wee Kyung;Shim, Seung Bo;Jee, Sung Bae
    • Journal of the Korean Chemical Society
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    • v.43 no.2
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    • pp.150-155
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    • 1999
  • The ignition delay times behind reflected shock waves in $C_2H_6-O_2-Ar$ systems containing $CH_3Cl$ were measured for the range of temperatures between 1270 and 1544 K. The measurements indicated that $CH_3Cl$ inhibited the ignition of ethane ignition and the inhibition effects increased with increasing $CH_3Cl$ concentration. To clarify the inhibition effects of $CH_3Cl$ from the viewpoint of the reaction mechanism, computational analyses were performed in $C_2H_6-CH_3CI-O_2-Ar$ mixtures.

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PAHs Formation Characteristics and Fullerenes $(C_{60},\;C_{70})$ Synthesis in a Low-Pressure $C_6H_6/Ar/O_2$ Flame (저압 $C_6H_6/Ar/O_2$ 화염에서 PAHs 생성 특성 및 플러렌$(C_{60},\;C_{70})$ 합성에 대한 연구)

  • Lee, G.W.;Kim, Y.W.;Hwang, J.;Jrung, J.;Choi, M.
    • Journal of the Korean Society of Combustion
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    • v.7 no.4
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    • pp.36-44
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    • 2002
  • Carbon molecules with closed-cage structures are called fullerenes $(C_{60},\;C_{70})$, whose applications include super-conductors, sensors, catalysts, optical and electronic device, polymer composites, and biological and medical materials. The synthesis of fullerenes has been recently studied with low-pressure benzene/argon/oxygen flames. The formation of fullerene is known as molecular weight growth processes of PAHs (polycyclic aromatic hydrocarbon). This study presents results of PAHs and fullerene measurements performed in a low-pressure benzene/argon/oxygen normal co-flow laminar diffusion flame. Through the central tube of the burner, benzene vapors carried by argon are injected. The benzene vapors are made in a temperature-controlled bubbler. The burner is located in a chamber, equipped with a sampling system for direct collection of condensable species from the flame, and exhausted to a vacuum pump. Samples of the condensable are analyzed by HPLC (High Performance Liquid Chromatography) to determine the yields of PAHs and fullerene. Also, we computed mole fraction of fullerene and PAHs in a nearly sooting low pressure premixed, one-dimensional benzene/argon/oxygen flame (equivalence ratio ${\Phi}=2.4$, pressure=5.33kPa). The object of computation was to investigate the formation mechanism of fullerenes and PAHs. The computations were performed with CHEMKIN/PREMIX. As a result of this study, fullerenes were synthesized in a low pressure (20torr) $C_6H_6/Ar/O_2$ flames and the highest concentration of fullerene was detected just above the visible surface of a flame.

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Colossal magnetoresistance of double-ordered perovskite $Sr_{2}FeMoO_{6}$ ceramics and sputter-deposited films ($Sr_{2}FeMoO_{6}$ 소결체와 스퍼터링법으로 제조된 박막의 초거대자기저항현상에 관한 연구)

  • 이원종;장원위
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.1
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    • pp.36-41
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    • 2002
  • Abstract The stoichiometric and double-ordered perovskite $Sr_2FeMoO_6$ (SFMO) polycrystalline ceramics were fabricated by sintering at above $900^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SMO polycrystals showed good ferromagnetic properties andmagnetrotesistqnce ratios of about 15 % at 8K and 3 % at room temperature. Amorphous SFMO thin films were deposited on $LaA1O_3$ and $SrTiO_3$ single crystal substrates using rf sputtering method with the SFMO polycrystalline ceramic target. Double-ordered perovskite polycrystalline SFMO thin films were fabricated by solid state crystallization by annealing the deposited amorphous films at above $680^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SFMO thin films exhibited ferromagnetic behavior. Their magnetroresistance ratios, however, were only 0.3~0.5% at 8K and disappeared with increasing the measuring temperature. This was attributed to the absence of magnetic spin tunneling between grains due to the porous structure and non-stoichiometric composition of the deposited films.

Synthesis, Structural Characterization and Thermal Behaviour of Block Copolymers of Aminopropyl-Terminated Polydimethylsiloxane and Polyamide Having Trichlorogermyl Pendant Group (Aminopropyl-Terminated Polydimethylsiloxane과 Trichlorogermyl 곁가지 그룹을 갖는 Polyamide 블록공중합체의 합성, 구조분석 및 열적거동)

  • Gill, Rohama;Mazhar, M.;Mahboob, Sumera;Siddiq, Muhammad
    • Polymer(Korea)
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    • v.32 no.3
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    • pp.239-245
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    • 2008
  • Block copolymers of the general formula $[(-CO-R'-CO-HN-Ar-NH-CO-R'-CO)_xNH(CH_2)_3-(Me_2SiO)_y(CH_2)_3NH_2]_n$, [n=18.00 to 1175.0] where $R'=CH_2CH(CH_2GeCl_3)$;$CH_2CHGeCl_3CH_2$; and $Ar=-C_6H_4$;$-(o.CH_3C_6H_4)_2$;$-o.CH_3OC_6H_4)_2$;$-(o.CH_3C_6H_4)$ were prepared by a polycondensation reaction of polyamide containing a pendant trichlorogermyl group and terminal acid chloride $Cl(-CO-R'-CO-NH-Ar-NH-CO-R'-CO-)_xCl$ with aminopropyl-terminated polydimethylsiloxane $H_2N(CH_2)_3(Me_2SiO)_y-(CH_2)_3NH_2]$, (PDMS). These polymers were characterized by elemental analysis, $T_g$, FT-IR, $^1H$-NMR, solid state $^{13}C$-NMR, and molecular weight determination. The thermal stability of these copolymers was examined using thermal analysis techniques, such as TGA and DSC. Their molecular weights as determined by laser light scattering technique ranged $5.13{\times}10^5$ to $331{\times}10^5\;g/mol$. These polymers display their $T_g$ in the range of 337 to $393^{\circ}C$ with an average decomposition temperature at $582^{\circ}C$.

A Study on the Carbothermic Reduction of Nb-Oxide and the refining by Ar/Ar-$H_2$ plasma and Hydrogen solubility of Nb metal (Ar/Ar-$H_2$ 플라즈마에 의한 Nb금속제조와 Nb금속의 수소용해)

  • Jeong, Yong-Seok;Hong, Jin-Seok;Kim, Mun-Cheol;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.3 no.6
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    • pp.565-574
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    • 1993
  • The Ar/Ar- $H_{2}$ plasma method Lvas applied to reduce and refine high purity Nb metal. Inaddition, the reaction between molten Nb metal and hydrogen were also analyzed in the Ar-(20%)$H_{2}$plasma. The metallic Nb of 99.5wt% was obtained at the ratio of $C/Nb_{2}O_{5}$=5.00 in the Ar plasma reductionand the $O_2$ loss from the thermal decomposition of niobium oxides did not take place. In the Ar-(20%)Hi plasma the metallic Nb of 99.8wt% was produced at the ratio of $C/Nb_{2}O_{5}$=4.80. It was observedthat a major reaction of the deoxidation was the reaction with H, Hi, and a deoxidation by the evaporationof $NbO_x$ did not occur but a mass loss of Nb did by a "splash" effect. The deoxidation reaction rateobeyed the 1st order reaction kinetics and the reaction rate constant(k') of deoxidation was $7.8 \times 10_{-7}$(m/sec).The solubility of hydrogen in Nb metal was 60ppm and it was larger than the solubility of molecularstate hydrogen by 40ppm in the Ar-(20%)$H_{2}$ plasma method. A saturation was within 60sec anda hydrogen content was reduced below lOppm by a Ar plasma re-treatment.by a Ar plasma re-treatment.

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Separation Technology of Pure Zirconia from Zirconsand by the Ar-H2 Arc Plasma Fusion and Sulfuric Acid Leaching with Microwave Irradiation (Ar-H2플라즈마 건식제련과 마이크로웨이브침출을 통한 지르콘샌드로부터 고순도 지르코니아 분리)

  • Lee, Jeong-Han;Hong, Sung-Kil
    • Resources Recycling
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    • v.25 no.3
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    • pp.49-54
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    • 2016
  • In this study, zircon sand is separated into zirconia and silica by using the Ar-$H_2$ arc plasma refining. And then silica is removed from it by the microwave leaching method to produce a high pure zirconia. Plasma melting consist of two sequential processes; reduction process with Ar gas only followed by refining process with Ar-$H_2$ gas. After cooling in chamber. The solid phase obtained at $240^{\circ}C$ were found to be composed of 20% sulfuric acid solution. The solution was used as a leaching solution with microwave irradiation to obtain a high purity zirconia.

Synthesis and Fluoride Binding Properties of Tris-pyridinium Borane

  • Lee, Kang Mun;Kim, Yejin;Do, Youngkyu;Lee, Junseong;Lee, Min Hyung
    • Bulletin of the Korean Chemical Society
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    • v.34 no.7
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    • pp.1990-1994
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    • 2013
  • A novel multi-cationic borane, tri-N-methylpyridinium substituted triarylborane, $[BAr^N_3]I_3$ ($[2]I_3$) ($Ar^N=4-(4-C_5H_4N-Me)-2,6-Me_2-C_6H_2$) was prepared from the corresponding neutral tris-pyridyl borane, $BAr_3$ (2a) ($Ar=4-(4-C_5H_4N)-2,6-Me_2-C_6H_2$). The crystal structure of 2a determined by X-ray diffraction study reveals the presence of tri-coordinate boron center with peripheral pyridyl moieties. The fluoride ion affinity of the cationic borane, $[2]I_3$ was investigated by UV-vis absorption titrations and was compared with that of neutral 2a. While 2a binds fluoride with the binding constant of $1.9{\times}10^2\;M^{-1}$ in $THF/H_2O$ (9:1 v/v) mixture, $[2]I_3$ shows a very high binding constant ($K=1.0{\times}10^8\;M^{-1}$) that is greater by six orders of magnitude than that of 2a in the same medium. This result indicates that the fluorophilicity of triarylborane can be drastically enhanced by multiple pyridinium substitutions.

Effect of Ambient Gases on the Characteristics of ITO Thin Films for OLEDs

  • Lee, Yu-Lim;Lee, Kyu-Mann
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.6
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    • pp.203-207
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    • 2009
  • We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.