• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.426-431
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• 1998

This paper describes electrochemical etch-stop characteristics in THAH/IPA/pyrazine solution. I-V curves of n- and p-type Si in THAH/IPA/pyrazine solution were obtained. OCP(Open Circuit Potential) and PP (Passivation Potential) of p-type Si were -1.2 V and 0.1 V, and of n-type Si were -1.3 V and -0.2 V, respectively. Both n- and p-type Si, etching rates were abruptly decreased at potentials anodic to the PP. The etch-stop characteristics in THAH/IPA/pyrazine solution were observed. Since accurate etching stop occurs at pn junction, Si diaphragms having thickness of epi-layer were fabricated. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vol.%/pyrazine 0.1g/100ml. thus the elapsed time of etch-stop was reduced.

• Membrane Journal
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• v.11 no.3
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• pp.124-132
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• 2001

Silica membranes were prepared on a porous ${\alpha}$-alumina tube with pore size of 150nm by sol-gel and chemical vapor deposition(CVD) method for hydrogen separation at high temperatures. Silica and ${\gamma}$-lumina membranes formed by the sol-gel method possessed a large amount of mesopores of a Knudsen diffusion regime. In order to improve the $H_2$ selectivity, silica was deposited in the sol-gel derived silica/${\gamma}$-alumina layer by thermal decomposition of tetraethyl orthosilicate(TEOS) at $600^{\circ}C$. The CVD with forced cross flow through the porous wall of the support was very effective in plugging mesopores that were left unplugged in the membranes. The CVD modified silica/alumina composite membrane completely rejected nitrogen permeation and thus showed a high $H_2$ selectivity by molecular sieve effect. the permeation of hydrogen was explained by activated diffusion and the activation energy was 9.52kJ/mol.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.33-33
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• 2000

일반적으로 GaN-based light emitting diodes(LEDs)는 Top layer위에 금속박막으로 contact을 형성하고 있으며 광소자 구성에 있어 빛은 이러한 금속 contact을 통과할 수 없다. 그러나 만약 이러한 contact이 투명전도막으로 구성될 수 있다면 보다 효율적인 광소자의 구성이 기대되어진다. 특히 GaN photodetector, GaN-based LEDs, GaN vertical cavity surface emitting lasers(VCSELs)등의 소자형성에 있어 투명전도막 contact은 매우 중요하며 그 응용에 앞서 기본적인 구조적, 전기적, 광학적 특성에 대한 연구가 반드시 선행되어져야 한다. 따라서 본 실험에서는 이러한 투명전도막으로써 Indium Tin Oxide(ITO)를 사용하였으며 박막형태의 contact으로 제조하여 n-GaN, p-GaN와 corning glass위에 e-beam evaporation법로써 제조하였다. 또한 각 n-, p-type과 corning glass위에 증착된 ITO박막의 구조적 특성을 분석하기 위하여 x-ray diffractometry(XRD)와 Auger electron spectroscopy(AES)등을 사용하였으며 전기적 특성을 측정하기 위하여 four point probe를 사용하였고 그들의 I-V 곡선을 측정하였다. 또한 UV spectrometry를 사용하여 그들의 광학적 특성을 측정하고자 하였다. ITO 박막의 제조에 있어 기판은 초음파 유기세정 후 HCl과 H2O2(1:1)의 혼합용액을 사용하여 GaO2를 제거하고자 하였으며 이후 초순수로 세척하여 사용하였다. 초기 진공도는 3$\times$10-5 Torr이하였으며 기판온도 50$0^{\circ}C$에서 0.6 /s의 증착속도로 약 2000 증착하였다. 이렇게 제조된 ITO 박막은 5$\times$10-5 Torr이하의 진공분위기에서 $600^{\circ}C$로 열처리를 실시하였으며 열처리 시간의 변화에 따른 그들의 전기적, 구조적, 광학적 특성을 측정하였다. 열처리 과정을 통한 ITO박막은 투과도는 420nm의 영역에서 80%이상을 나타내었으며 이때의 면저항은 약 50ohm/ 이었다. 또한 I-V 곡선 측정에 의한 contact특성의 측정결과 열처리 전의 ITO contact은 n-GaN와 n-GaN에 대해 각각 ohmic과 schottky contact의 일반적인 contact 특성을 나타내었다. 그러나 이러한 contact 특성은 열처리 시간의 변화에 따라 변화하는 것을 확인할 수 있었다.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.495-500
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• 2007

The inside wall of a coal gasifier is lined with refractory, and the corrosion of the refractory is an important factor affecting the refractory lifetime and the replacement period. This paper examines the changes in microstructure of a chromia refractory due to chemical reactions with slag having varying amounts of $Fe_2O_3$. Slag samples were prepared by adding $Fe_2O_3$ to KIDECO slag, and static corrosion experiments were carried out at $1550^{\circ}C$. The layer of $(Fe,Cr)_3O_4$ formation and the depth of Fe depletion in the infiltrating slag were determined. In addition, FactSage equilibrium calculations were carried out in order to determine the conditions of formation, and to compare with the experimental observations. In the sample exposed to KIDECO slag, which has about 10 wt% $Fe_2O_3$, the formation of $(Fe,Cr)_3O_4$ was not observed. As the $Fe_2O_3$ concentration in slag increased, $(Fe,Cr)_3O_4$ formation and Fe depletion depth increased. Increasing $Fe_2O_3$ concentration also made the slag/refractory interface indistinguishable. Equilibrium calculations predicted that higher $Fe_2O_3$ concentrations favor chromite formation at gasification temperatures. The chromite formation was most favorable when the amount of $Cr_2O_3$ was limited, as in the case of dissolved $Cr_2O_3$ in slag. When the concentration of $Fe_2O_3$ in slag was less than 20%, the formation of chromite was least favorable in the system with equal amounts of slag and refractory.

• 전기의세계
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• v.28 no.4
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.162-162
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• 2014

최근 들어 wearable computing에 대한 수요가 증가하면서 flexible device에 대한 연구가 활발히 진행되고 있다. 하지만, flexible device를 구현하기 위해서는 기판의 damage를 줄이기 위한 저온공정, device life-time 향상을 위한 passivation, 와이어 본딩 등 다양한 문제들이 해결 되어야 한다. 이러한 문제들 중, polymer 기판과 금속간의 접착력을 향상시키기 위해서 많은 연구자들은 기판의 표면에 adhesive layer를 도포하거나 금속잉크의 solvent를 변화시키는 등의 연구를 진행해왔다. 종래의 연구는 기존 device를 대체 할 수 있을 정도의 생산성과 polymer 기판에 대한 열 적인 손상 이 문제가 되었다. 종래의 문제를 해결하기 위하여 저온공정, in-line system이 가능한 준 준 대기압 플라즈마를 사용하였다. 본 연구에서는 금속잉크를 Ink-jet으로 jetting하여 와이어 본딩 하는 과정에서 전도성 ink의 선폭을 유지시키고 접착력을 향상하기 위하여 준 대기압 플라즈마 공정을 이용하여 이러한 문제점을 해결하고자 하였다. Polymer 기판 표면에 roughness를 만들기 위해 대략 수백 nm 크기를 갖는 graphene flake를 spray coating하여 마스크로 사용하고 준 대기압 플라즈마를 이용하여 표면을 식각 함으로써 roughness를 형성시켰다. 준 대기압 플라즈마를 발생시키기 위해 double discharge system에서 6 slm/1.5 slm (He/O2) gas composition을 하부 전극에 흘려보내고 60 kHz, 5 kV 파워를 인가하였다. 동시에 상부 전극에는 30 kHz, 5 kV 파워를 인가하여 110초 동안 표면 식각 공정을 진행하였다. Graphene flake mask가 coating되어 있는 유연기판을 산소 플라즈마 처리 한 후 물에 3초 동안 세척하여 표면에 남아있는 graphene flake를 제거하고 6 slm/0.3 slm (He/SF6)의 유량으로 주파수와 파워 모두 동일 조건으로 110초 동안 표면 처리를 하였다. Figure 1은 표면 개질 과정과 graphene flake를 mask로 사용하여 얻은 roughness 결과를 SEM을 이용하여 관찰한 결과이다. 이와 같이 실험한 결과 ink와 기판간의 접촉면적을 늘려주고 접촉 각을 조절하여 Wenzel model 을 형성 할 수 있는 표면 roughness를 생성하였고 표면의 화학적 결합을 C-F group으로 치환하여 표면의 물과 접촉각 이 $47^{\circ}$에서 $130^{\circ}$로 증가하는 것을 확인하였다.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.551-554
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• 2002

As a general rule, the brazing process between cemented carbides and steel used by Silver (Ag) type brazing filler. The composition of Ag type filler were used Ag-Cu-Zn-Cd type filler mainly. But, the demand of Cadmium (Cd)-free in Ag type filler was raised recently. The reason why Cd-free in Ag brazing filler were occupied to vaporize as a CdO$_2$ when brazing process, because of Cd element was almost low boiling point of all Ag type filler elements. And, CdO$_2$ was a very harmful element for the human body. This experiment was developed Cd-freeing on Ag type filler that was used Indium (In) instead of Cd element. In this experiment, there were changed from 0 to 5% In addition in Ag brazing filler and investigated to most effective percentage of Indium. As a result, the change of In addition instead of Cd, there was a very useful element and obtained same property only 3% In added specimens compared to Cd 19% added specimens. These specimens were obtained same or more deflective strength. In this case, there were obtained 70 MPa over strength and wide brazing temperature range 650-800 C. A factor of deflective strength were influenced by composition and the shape of $\beta$ phase and between $\beta$ phase and cemented carbides interface. Indium element presented as $\alpha$ phase and non-effective factor directly, but it's occupied to solid solution hardening as a phase. $\beta$ phase were composed 84-94% Cu-Ni-Zn elements mainly. Especially, the presence of Ni element in interface was a very important factor. Influence of condensed Ni element in interface layer was increased the ductility and strength of brazing layer. Therefore, these 3% In added Ag type filler were caused to obtain a high brazing strength.

• Korean Journal of Acupuncture
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• v.29 no.2
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• pp.239-249
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• 2012

Objectives : This study was investigated to observe Foot Soeum Meridian Muscle in human. Methods : In order to expose components related to Foot Soeum Meridian Muscle, cadaver was dissected in the order of their depth; being respectively divided into superficial, middle, and deep layer. Results : Anatomical components related to Foot Soeum Meridian Muscle in human are composed of muscles such as flexor digitorum brevis tendon, abductor hallucis muscle, psoas major m., erector spinae m., and flexor retinaculum, fascia such as plantar aoneurosis, ligament such as sacrotuberal ligament, sacrospinous lig., nuchal lig., nerves such as plantar cut. br. of med. plantar nerve, med. crural cut. br. of saphenous n., br. of tibial n., post. femoral cut. n., spinal n.(dorsal rami of C4-6, T7-12, L1-3, and S1-3), and autonomic nervous system(sacral plexus, pelvic splanchnic n., etc.), and etc. Conclusions : This study shows comparative differences from established studies on anatomical components related to Foot Soeum Meridian Muscle, and the methodical aspects of analytic process. In addition, Foot Soeum Meridian Muscle in human is a comprehensive concept including the relevant nerves, but it remains questionable.

• Applied Microscopy
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• v.25 no.3
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• pp.75-81
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• 1995

The microstructural characterization of ternary $ZnS_{x}Se_{1-x}$(x=0.085) on GaAs(001) substrate grown up to $2{\mu}m\;at\;300^{\circ}C$ by molecular beam epitaxy(MBE) which has a single growth chamber was investigated by high resolution transmission electron microscope (HRTEM) working at 300 kV with point resolution of 0.18nm. The interface in the ZnSSe/GaAs specimen maintains a pseudomorphism with the substrate, but the epilayer has high density of stacking faults and moire fringes. The pits which had formed along <111> direction were found at the interface of ZnSSe/GaAs. The pits were responsible for producing defects in both epilayer and substrate. The wavy interface which has the difference of 15nm in height was found to maintain the pseudomorphism with the substrate and no stacking faults were found around the interface. However there exists faint and fine moire fringes in the epilayer near interface.

• Ocean and Polar Research
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• v.26 no.2
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• pp.341-349
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• 2004

Hyrdography and deep currents were measured from 1997 to 1999 to investigate deep-sea environments in the KODOS (Korea Deep Ocean Study) area of the northeastern tropical Pacific. KODOS area is located meridionally from the North Equatorial Current to the boundary between the North Equatorial Current and the Equatorial Counter Current. Strong thermocline exists between 10 m and 120 m depths at the study area. Since that strong thermocline does hardly allow vertical mixing between surface and lower layer waters, vertical distributions of temperature, salinity, dissolved oxygen and nutrients drastically change near the thermocline. Salinity-minimum layer, which indicate the North Pacific Intermediate Water (NPIW) and the Antartic Intermediate Water (AAIW), vertically occupies vertically at the depths from 500 m down to 1400 m. The NPIW and the AAIW horizontally occur to the north and to the south of $7^{\circ}N$, respectively. The near-bottom water shows the physical characteristics of $1.05^{\circ}C$ and 34.70 psu at the depths of 10 m to 110 m above the bottom (approximately 4000-5000 m), which was originated from the Antarctic Circumpolar Water. It flows northeastwards for 2 to 4 months at the study area, and its mean velocity was 3.1-3.7 cm/s. Meanwhile, reverse (southwestward) currents appear for about 15 days with the average of 1.0-6.1 cm/s every 1 to 6 months. Dominant direction of the bottom currents obtained from the data for more than 6 months is northeastward with the average speeds of 1.7-2.1 cm/s. Therefore, it seems that deep waters from the Antarctica flow northwards passing through the KODOS area in the northeastern tropical Pacific.