• Title/Summary/Keyword: $C_2H_2$ sensor

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Electrochemical Sensor for the Selective Determination of Prindopril Based on Phosphotungestic Acid Plastic Membrane

  • Zareh, Mohsen M.;Wasel, Anower M.;Alkreem, Yasser M. Abd
    • Bulletin of the Korean Chemical Society
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    • v.34 no.10
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    • pp.3088-3092
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    • 2013
  • A novel PVC membrane sensor for perindopril based on perindopril-phosphotungstate ion pair complex was prepared. The influence of membrane composition (i.e. percent of PVC, plasticizer, ion-pair complex, and kind of plasticizer), inner solution, pH of test solution and foreign cations on the electrode performance was investigated. The optimized membrane demonstrates Nernstian response ($30.9{\pm}1.0$ mV per decade) for perindopril cations over a wide linear range from $9.0{\times}10^{-7}$ to $1{\times}10^{-2}$ M at $25^{\circ}C$. The potentiometric response is independent of the pH in the range of 4.0-9.5. The proposed sensor has the advantages of easy preparation, fast response time. The selectivity coefficients indicate excellent selectivity for perindopril over many common cations (e.g., $Na^+$, $K^+$, $Mg^{2+}$, $Cu^{2+}$, $Ni^{2+}$, rhamnose, maltose, glycine and benzamide. The practical applications of this electrode was demonstrated by measuring the concentrations of perindopril in pure solutions and pharmaceutical preparations with satisfactory results.

Fabrication and Electrical Properties of Anodic Aluminum Oxide Membrane with Various Anodizing Temperatures for Biosensor (바이오센서로 응용을 위한 양극산화알루미늄의 양극산화 온도에 따른 제작 및 전기적 특성)

  • Yeo, Jin-Ho;Lee, Sung-Gap;Kim, Yong-Jun;Lee, Young-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.6
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    • pp.394-398
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    • 2014
  • We fabricated the electrolyte-dielectric-metal (EDM) sensor on the base of AAO (anodic aluminum oxide) template with variation of the anodizing temperature. When a surface is immersed or created in an aqueous solution, a discontinuity is formed at the interface where such physicochemical variables as electrical potential and electrolyte concentration change significantly from the aqueous phase to another phase. Because of the different chemical potentials between the two phases, charge separation often occurs at the interfacial region [1]. This interfacial region, togeter with the charged surface, is usually known as the electrical double layer (EDL) [2]. The structural and electrochemical properties of AAO sensor were investigated for applications in capacitive pH sensors. To change the thickness of the AAO template, the anodizing temperature was varied from $5^{\circ}C$ to $20^{\circ}C$, the thickness of the AAO template invreased from 300 nm to 477 nm. The pH sensitivity of sensors with the anodizing temperature of $20^{\circ}C$ showed the highest value of 56.4 mV/pH in the pH range of 3 to 11. The EDM sensor with the anodizing temperature of $20^{\circ}C$ exhibited the best long-term stability of 0.037 mV/h.

The Fabrication of ITO Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering Method and their Characterization (R.F. Magnetron Sputtering법을 이용한 ITO 박막 오존 가스센서의 제조 및 특성)

  • Kwon, Jung-Bum;Jung, Kyoung-Keun;Lee, Dong-Su;Ha, Jo-Woong;Yoo, Kwang-Soo
    • Journal of the Korean Ceramic Society
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    • v.39 no.9
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    • pp.840-845
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    • 2002
  • As an ozone gas sensor, the semiconductor gas sensor which is cheap, portable and simple in use and has a high sensitivity and an excellent selectivity, has been known as an alternative. In the present study, ITO ($In_2O_3 95%,\;SnO_2$ 5%) thin films were deposited on the alumina substrate by using R.F. magnetron sputtering method. The substrate temperature was 300$^{\circ}C$ and 500$^{\circ}C$, respectively and then some specimens were annealed at 500$^{\circ}C$ for 4h in air. ITO gas-sensing films formed crystallines before and after annealing. As results of gas sensitivity measurements to an ozone gas, the sensor deposited at 300$^{\circ}C$ and then annealed has the highest sensitivity (sensible below 1 ppm). As the operating temperature increased gradually, the sensitivity decreased but the response time and stability improved.

fabrication of DMMP Thick Film Gas Sensor Based on SnO2 (산화주석을 기반으로 한 DMMP 후막가스센서 제작)

  • 최낙진;반태현;곽준혁;백원우;김재창;허증수;이덕동
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1217-1223
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    • 2003
  • Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is dimethyl methyl phosphonate(C$_3$ $H_{9}$ $O_3$P, DMMP) that is simulant gas of nerve gas. Sensing materials were Sn $O_2$ added a-Al$_2$ $O_3$ with 0∼20wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor device was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Total size of device was 7${\times}$10${\times}$0.6㎣. Crystallite size & phase identification and morphology of fabricated Sn $O_2$ powders were analyzed by X-ray diffraction and by a scanning electron microscope, respectively. Fabricated sensor was measured as flow type and resistance change of sensing material was monitored as real time using LabVIEW program. The best sensitivity was 75% at adding 4wt.% $\alpha$-Al$_2$ $O_3$, operating temperature 30$0^{\circ}C$ to DMMP 0.5ppm. Response and recovery time were about 1 and 3min., respectively. Repetition measurement was very good with $\pm$3% in full scale.TEX>$\pm$3% in full scale.

Development of Trimming Technology in High-fine Resistor Using U.V. Laser (자외선 레이저를 이용한 고정밀 저항체 가공기술 개발)

  • Noh, S.S.;Kim, D.H.;Chung, G.S.;Kim, H.P.;Kim, K.H.
    • Journal of Sensor Science and Technology
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    • v.11 no.6
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    • pp.358-364
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    • 2002
  • In this paper, we used U.V.(wavelength, 355nm) laser for adjusting Pt thin films temperature sensor to $100{\Omega}$ at $0^{\circ}C$. Internationally, A-class tolerance of temperature sensor is $0.06{\Omega}$ at $0^{\circ}C$. This is under value of $0.15^{\circ}C$, actually, so high-fine trimming technology is essential to this process. The width of trimmed lines was about $10{\mu}m$ and the best trimming of Pt thin films of $1{\sim}1.5{\mu}m$ was carried out with power : 35mW, rep. rate frequency : 200Hz and bite size : $1.5{\mu}m$. And using photolithography process, 96 resistors were fabricated in $2"{\times}2"$ substrate as the proportion of $79{\sim}90{\Omega}$ and $91{\sim}102{\Omega}$ is 42.7% and 57.3%, respectively. As result of trimming resistors to the target value of $109.73{\Omega}$ at $25^{\circ}C$, 82.3% of resistors had the tolerance within ${\pm}0.30{\Omega}$ and the others(17.7%) were within ${\pm}0.06{\Omega}$ of A-class tolerance.

Fabrication and Properties of MI Sensor using CoZrNb films (CoZrNb 막을 이용한 MI센서 제작 및 특성)

  • Hur, J.;Kim, Y.H.;Shin, K.H.;SaGong, G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.132-135
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    • 2002
  • MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field($H_{k}$) as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C$ respectively for 2 hours. Magnetic properties of film are measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range 1 MHz to 750MHz. And, it was examined on the permeability and impedance to design the MI sensor which acts at 50MHz by thickening a CoZrNb film relatively, and fabricated the MI sensor which acts at the 50MHz.

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The Cutting Process Monitoring of Micro Machine using Multi Sensor (멀티센서를 이용한 마이크로 절삭 공정 모니터링)

  • Shin, B.C.;Ha, S.J.;Kang, M.H.;Heo, Y.M.;Yoon, G.S.;Cho, M.W.
    • Transactions of Materials Processing
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    • v.18 no.2
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    • pp.144-149
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    • 2009
  • Recently, the monitoring technology of machining process is very important to improve productivity and quality in manufacturing filed. Such monitoring technology has been performed to measurement using vibration signal, acoustic emission signal and tool dynamometer. However, micro machining is limited small-scale parts machining because micro tool is very small and weakness to generate signal in micro machining process. Therefore, this study has efficient sensing technology for real monitoring system in micro machine that is proposed to supplement a disadvantage of single-sensor by multi sensor. From experimental result, it was evaluated tool wear and cutting situation according to repetitive slot cutting condition and changing cutting condition, and it was performed monitoring spindle rpm and condition according to compare acceleration signal with current signal.

Android Real Target Porting Application Software Development (안드로이드 리얼 타깃 포팅 응용 소프트웨어 개발)

  • Hong, Seon Hack;Nam Gung, Il Joo
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.7 no.3
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    • pp.1-10
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    • 2011
  • In this paper, we implemented the Android NDK porting application with Eclipse(JDK) ADT and TinyOS 2.0. TinyOS and Cygwin are component based embedded system and an Open-source basis for interfacing with sensor application from H-mote. Cygwin is a collection of tools for using the Linux environment for commercially released with x86 32 bit and 64 bit versions of Windows. TinyOS-2. x is a component based embedded OS by UC Berkeley and is an Open-source OS designed for interfacing the sensor application with specific C-language. The results of Android porting experiment are described to show the improvement of sensor interfacing functionality under the PXA320 embedded RTOS platform. We will further more develop the software programming of Android porting under Embedded platform and enhance the functionality of the Android SDK with mobile gaming and kernel programming under sensor interfacing activity.

Fabrication and Gas Sensing Characteristics of $MoO_3$ Thin Film Sensor ($MoO_3$ 박막센서 제조 및 가스감지특성)

  • Hwang, Jong-Taek;Jang, Gun-Eik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.826-829
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    • 2002
  • $MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in en atmosphere by RF reactive sputtering. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}$mtorr and all deposited films were annealed at $500^{\circ}C$ for 5hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by XRD. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO.

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Gas Sensitization of Tin Oxide Film by Resistance

  • Chwa, Sang-Ok;Park, Hee-Chan;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • v.4 no.3
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    • pp.183-188
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    • 1998
  • Gas sensitizations of tin oxide film were investigated by measuring the change of film resistance in various gas atmospheres such as $N_2,\; O_2,\; H_2O$. The main test sample, polycrystalline $SnO_2$ film containing small Sb as a dopant was prepared by a sputtering technique and showed a long term stability in base resistance and thus, in gas sensitivity. The adsorption of oxygen on the film surface as a type of $(O_{ads})$ at the temperature of around $300^{\circ}C$ played important roles in sensor operating mechanism. The roles were ⅰ) the increase of base resistance in ambient air, which consequently lead to high sensitivity and ⅱ) the promotion of fast recovery. The reaction of hydrogen gas with the already adsorbed $(O_{ads})$ ions was considered as a decisive sensitization mechanism of tin oxide film. However, the dissociation of hydrogen molecules on film surface, by direct donation of electron to film also took a major part in the sensitization. The effect of humidity on gas sensitization was found to be negligible at the sensor operating temperature of around $300^{\circ}C$.

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