• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.271-274
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• 2000

Gas sensor materials capable of detecting hydrogen gases (H$_2$) or nitrogen oxides (NO$\_$x/, primarily NO and NO$_2$) with high sensitivity have attracted much interest in conjunction with the growing concern to the protection of global environments. Beside conventional sensor materials, such as semiconductors., conducting polymers and solid electrolytes, the potential of sensor materials with a new method for detecting hydrogen gases or nitrogen oxides gas has also been tested. The breakdown voltage of porous varistors shifted to a low electric field upon exposure to H$_2$ gas, whereas it shifted to a reverse direction in an atmosphere containing oxidizing gases such as O$_3$ and NO$_2$ in the temperature range of 300 to 600$^{\circ}C$. Furthermore, it was found that the magnitude of the breakdown voltage shift, i. e. the magnitude of sensitivity, was well correlated with gas concentration, and that the H$_2$ sensitivity was improved by controlling the composition of the Bi$_2$O$_3$ rich grain boundary phase. However, NO$\_$x/ sensing properties of porous varistors have not been studies in detail. The objective of the present study is to investigate the effect of the composition of the Bi$_2$O$_3$ rich grain boundary phase and other additive such as A1$_2$O$_3$ on the hydrogen gases (H$_2$) sensing properties of porous ZnO based varistors.

• 센서학회지
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• 제18권4호
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• pp.263-268
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• 2009

With the increasing number of automobiles, the problem of air pollution from the exhaust gases of automobiles has become a critical issue. The principal gases that cause air pollution are nitrogen oxide or NO$_x$(NO and NO$_2$), and CO. Because NO$_x$ gases cause acid rain and global warming and produce ozone(O$_3$) that leads to serious metropolitan smog from photochemical reaction, they must be detected and reduced. Mixtures of WO$_3$ and $In_2O_3$(WO$_3$:$In_2O_3$=10:0, 7:3, 5:5, 3:7, and 0:10 in wt.%), which are NO$_x$ gas-sensing materials, were prepared, and thick-film gas sensors that included a heater and a temperature sensor were fabricated. Their sensitivity to NO$_x$ was measured at 250$\sim$400$^{\circ}C$ for NO$_x$ concentrations of 1$\sim$5 ppm. The $In_2O_3$ thick-film sensor showed excellent sensitivity($R_{gas}/R_{air}$=10.22) at 300$^{\circ}C$ to 5-ppm NO. The response time for 70 % saturated sensitivity was about 3 seconds, and the sensors exhibited very fast reactivity to NO$_x$.

• 한국화재소방학회논문지
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• 제16권4호
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• pp.15-19
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• 2002

BaTiO$_3$계 PTC 서미스터의 조성개발을 위해 (Ba$_{0.95-x}$S $r_{0.05}$C $a_{x}$)$TiO_3$-$0.01TiO_2$-$0.01SiO_2$-$\alpha$MnCO_3$-$\beta$Nb_2$o_{5}$와 같은 실험조성식을 설정한 후 최적 조건하에서 적층형 PTC시편을 제작하여 실험하였다. 실험 결과, 시편제조시의 최적 소결온도와 냉각속도는 각각 $1350^{\circ}C$-2 hour및 $100^{\circ}C$/h였다. 또한 상온저항을 낮추는 효과가 있는 Dopant로서의 Ca와 Mn 그리고 피크(peak)저항값을 높일 수 있는 Nb를 Ca:5 mol%, Mn:0.08 mol%, Nb:0.18 mol%로 함으로써 비교적 낮은 상온저항과 높은 피크(peak)저항 및 양호한 온도계수 특성이 나타났으며, 화재감지센서로서의 활용 가능성을 확인하였다.다.다.

• 센서학회지
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• 제11권5호
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• pp.279-285
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• 2002

단일 기판위에 온도측정용 Pt 박막과 Pt 히터 그리고 가스 감지를 위하여 순수한 $SnO_2$ 박막과 Pt가 첨가된 $SnO_2$ 박막을 설계하고 제작하였다. 제작된 소자는 실내환경가스인 이산화탄소, 프로판 그리고 부탄의 분류에 응용되었다. 동작 온도를 가변하기 위하여 히터의 입력 전압을 사다리꼴로 인가하면서 $SnO_2$ 감지막의 반응특성과 실내환경가스들에 대한 분류여부를 조사하였다. 감지막 반응특성곡선에서 여러 변수들을 추출한 후 주성분분석(principal component analysis : PCA)을 통하여 가스 분류 특성을 검증하였다.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2006년도 추계학술발표논문집
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• pp.135-138
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• 2006

$H_2$ 실험은 마이크로 가스센서를 초기에 공기 분위기에서 초기 저항 값을 측정하였다. $SnO_2/Pd/V_2O_5$으로 구성된 감지물질은 수소 농도 5000ppm에서 초기 저항 값을 기준으로 하여 10배 감소하는 우수한 감도 반응을 확인할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1818-1820
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• 1999

This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.

• 센서학회지
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• 제5권2호
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• pp.55-60
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• 1996

The growth and microwave plasma assisted nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy(OMVPE) has been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements. Particular emphasis is placed on understanding growth characteristics of $H_{2}Se$ and the new adduct source dimethylzinc:triethyllamine($DMZn:NEt_{3}$) as compared with those obtained with $H_{2}Se$ and DMZn. At lower temperatures ($<300^{\circ}C$) and pressures(<30Torr), growth rates are higher with the adduct source and the surface morphology is improved relative to films synthesized with DMZn. Hall measurements and photoluminescence spectra of the grown films demonstrate that DMZn and $DMZn:NEt_{3}$ produce material with comparable electronic and optical properties. Microwave plasma decomposition of ammonia is investigated as a possible approach to increasing nitrogen incorporation in ZnSe and photoluminescence spectra are compared to those realized with conventional ammonia doping.

• 한국세라믹학회지
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• 제22권4호
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• pp.54-60
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• 1985

Gas sensing materials for detecting flammable gases such as $CH_4$, $C_3H_8$ and n-$C_4H_{10}$ were developed by util-izing $In_2O_3$ as the principal sensing material. The sensing materials were formulated by mixing $In_2O_3$ powder with one or two other chemicals such as $SnO_2$, $Y_2O_3$ and $Al_2O_3$ with a small addition of $PdCl_2$ as a catalyst. Sample of sensor were fabricated by coating each of the mixtures on a ceramic tube impregnating ethylsili-cate and firing at 75$0^{\circ}C$ Each material mixture was evaluated by measuring and comparing gas sensitivity(resistance in air/resistance with gas) to flammable gases such as $CH_4$, $C_3H-8$ and n-$C_4H_{10}$. It was found that among fifteen compositions tested three compositions as follows show the highest gas sensitivity and thus are very feasible for commercialization as the gas sensors ; o49.5 $In_2O_3$+50 Al2O3_0.5 PdCl2(wt%) o $20In_2O_3+29$ $SnO_2+50$ $Al_2O_3+1$ $PdCl_2$(wt%) o40 $In_2O_3$+9 $Y_2O_3+50$ $Al_2O_3+1$ $PdCl_2$(wt%)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.589-592
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• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1842-1844
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• 2004

In oil-filled equipment such as transformers, partial discharge or local overheating will make insulating material(oil, kraft paper, proclain and wood) be stressed and generate many sort of gases(CO, $CO_2,\;H_2,\;C_2H_4$) which are dissolved in transformer oil. The ratio of this gas can make diagnostic tecchniques of the lifetime of transfomer so, it is important to monitoring $H_2$ gas continuously. This paper developes a system of detecting about $H_2$ gas by using $H_2$ gas sensor, and we describe operation and performance of this system.