• Macromolecular Research
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• 제16권6호
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• pp.561-566
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• 2008

NR composites with different curing systems were aged thermally at 60, 70, 80, and $90^{\circ}C$ for 2-185 days in a convection oven, and the changes in the crosslink density were investigated as a function of the accelerated thermal aging. The overall crosslink densities increased with increasing aging time irrespective of the aging temperatures and curing systems. The changes in crosslink density were enhanced by increasing the aging temperature. The degree of the increased crosslink density was in the following order: "the conventional cure system > the semi-EV system > the EV system". For short term thermal aging, the change in crosslink density with the aging time was complicated, particularly for low temperature aging. The activation energies of the change in crosslink density with thermal aging using the conventional and semi-EV cure systems increased and then remained relatively constant with increasing aging time, whereas that of the specimen with an EV cure system tended to increase linearly. The experimental results were explained by the dissociation of the existing polysulfidic linkages and the formation of new cross links through the crosslinking-related chemicals remaining in the sample.

• Bulletin of the Korean Chemical Society
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• 제20권12호
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• pp.1493-1500
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• 1999

The electronic transitions from the ground state to low-lying excited states of CF₃OH have been investigated using high level ab initio quantum mechanical techniques. Also the possible photodissociation procedures of CF₃OH have been considered. The highest level employed in this study is TZP CCSD(T) level of theory. The possible four low-lying excited states can result by the excitation of the lone pair electron (n) in oxygen to σ$^*$ molecular orbital in C-O or O-H bond. The vertical transition (n → σ$^*$) energy is predicted to be 220.5 kcal/mol (130 nm) at TZ2P CISD level to theory. The bond dissociation energies of CF₃OH to CF₃O +H and CF₃+OH have been predicted to be 119.5 kcal/mol and 114.1 kcal/mol, respectively, at TZP CCSD level of theory. In addition, the transition state for the unimolecular decomposition of CF₃OH into CF₂O + HF has been examined. The activation energy and energy separation for this decomposition have been computed to be 43.6kcal/mol and 5.0 kcal/mol including zero-point vibrational energy corrections at TZP CCSD(T) level of theory.ed phenols were also estimated.

• 한국재료학회지
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• 제9권12호
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• pp.1216-1221
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• 1999

TMGa와 유전체 장벽방전에 기초한 질소함유 활성종을 이용하여 (0001) 사파이어 기판위에 GaN 박막을 저온에서 성장시켰다. III-V 질소화합물 반도체의 에피막 성장에 있어서 암모니아는 유기금속 화학증착법에서 지금까지 알려진 가장 보편적인 질소 공급원이며 충분한 질소공급을 위해 $1000^{\circ}C$ 이상의 고온 성장이 필수적이다. GaN 박막을 비교적 저온에서 성장시키기 위하여 질소 공급원으로 암모니아 대신 유전체 장벽방전을 이용하였다. 유전체 장벽방전은 전극사이에 유전체 장벽을 설치하여 arc를 조절하는 방전이며 수 기압의 높은 공정압력보다 훨씬 높으므로 기판표면까지 전달하는데도 이점이 있다. GaN 박막의 결정성과 표면형상은 성장온도, 완충층에 따라 변화하였으며, $700^{\circ}C$의 저온에서도 우수한 (0001) 배향성을 갖는 GaN 박막을 성장할 수 있었다.

• Elastomers and Composites
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• 제48권1호
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• pp.55-60
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• 2013

디클로로아세트산의 처리 여부에 따른 무수말레산-그래프트 EPDM (MAH-g-EPDM) 원재료(시험편-R)와 압축 시험편(시험편-C)의 팽윤 거동을 조사하였다. 시험편의 구조적 특징은 핵자기공명분광법(NMR)과 감쇠전반사-후리에변환 적외선분광법(ATR-FTIR)으로 분석하였다. 디클로로아세트산으로 처리하지 않았을 때, 시험편-R의 팽윤비가 시험편-C의 팽윤비보다 2배 정도 컸으며 팽윤과 건조 과정을 반복하여도 팽윤비의 변화는 거의 없었다. 디클로로아세트산으로 처리하였을 때는 1차 팽윤비는 증가하였으나 건조 후 2차 팽윤비는 감소하였다. 시험편-C의 경우, 디클로로아세트산으로 처리하지 않았을 때의 팽윤비와 디클로로아세트산으로 처리한 시험편의 2차 팽윤비는 거의 유사하였다. 하지만, 시험편-R의 경우, 디클로로아세트산으로 처리한 시험편의 2차 팽윤비는 디클로로아세트산으로 처리하지 않았을 때의 팽윤비보다 크게 작았다. 디클로로아세트산으로 처리하였을 때 나타난 팽윤비 변화는 기존 가교점의 분해와 새로운 가교점의 형성으로 설명하였다.

• 공업화학
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• 제8권3호
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• pp.382-388
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• 1997

본 연구는 펄스 반응기 및 고정층 연속반응기를 사용하여 ${\gamma}$-알루미나에 담지된 니켈촉매상에서 이산화탄소에 의한 프로판의 개질반응 특성을 고찰한 것이다 Ni/${\gamma}$-$A1_2O_3$촉매가 NiO/${\gamma}$-$A1_2O_3$촉매보다 $CO_2$의 해리능력과 프로판의 개질 능력이 우수한 것으로 나타났다. 프로판과 $CO_2$의 혼합물에 산소를 추가한 결과 프로판의 전환율이 증가하였고 표면의 탄소침적도 감소함을 알 수 있었다. Ni/${\gamma}$-$A1_2O_3$와 $Ga_2O_3$의 기계적 혼합 촉매는 Ni/${\gamma}$-$A1_2O_3$자체보다 촉매의 활성이 오래 유지되었고 두 상의 협동에 의한 상승효과(synergistic effect)가 관찰되었다.

• Journal of Electrochemical Science and Technology
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• 제9권3호
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• pp.195-201
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• 2018

To enhance the performance of cathodes at low temperatures, a Cu-coated cathode is prepared, and its electrochemical performance is examined by testing its use in a single cell. At $620^{\circ}C$ and a current density of $150mAcm^{-2}$, a single cell containing the Cu-coated cathode has a significantly higher voltage (0.87 V) during the initial operation than does that with an uncoated cathode (0.79 V). According to EIS analysis, the high voltage of the cell with the Cu-coated cathode is due to the dramatic decrease in the high-frequency resistance related to electrochemical reactions. From XPS analysis, it is confirmed that the Cu is initially in the form of $Cu_2O$ and is converted into CuO after 150 h of operation, without any change in the state of the Ni or Li. Therefore, the high initial cell voltage is confirmed to be due to $Cu_2O$. Because $Cu_2O$ is catalytically active toward $O_2$ adsorption and dissociation, $Cu_2O$ on a NiO cathode enhances cell performance and reduces cathode polarization. However, the cell with the Cu-coated cathode does not maintain its high voltage because $Cu_2O$ is oxidized to CuO, which demonstrates similar catalytic activity toward $O_2$ as NiO.

• Clinical and Experimental Reproductive Medicine
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• 제16권2호
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• pp.131-138
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• 1989

The present study was designed to develop a new method for the determination of estrogen receptor in porcine uterus using frozen sections. Cryostat sections were incubated with $^3H$-estradiol($^3H$-$E_2$) in the presence or absence of diethylstilbestrol(DES) and the radioactivity of 3H-E2 bound to estrogen receptor(ER) was detected. The level of specific estrogen receptor was determined by Scatchard analysis. The highest ratio of specific binding against total binding was achieved in 3 sec. tions(5mm x 5mm) which was corresponded to lOO${\mu}$/ml protein concentration. Optimal binding was obtained during incubation with $^3H$-$E_2$ for 30 minutes at 23$^{\circ}C$ after treatment of sections with acetone for 20 seconds. Three time-washing of sections was proved to be appropriate for the removal of unbound 3H-E2. 200-fold molar excess of DES was substituted for the binding of $^3H$-$E_2$ to ER sufficiently(binding efficiency of 54.8%). ER was saturated with 4nM of $^3H$-$E_2$ and its dissociation constant was 0.1nM. ER assay using frozen sections(Histological radioreceptor assay, HRRA) was significantly correlated with radioreceptor assay for estradiol(RRA, 0.976 , p

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2006년도 제26회 춘계학술대회논문집
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• pp.383-386
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• 2006

HTPB/AP 혼합형 추진제(A형)와 니트라민계 산화제가 소량 함유된 추진제의 진공 점화 특성을 고찰하였다. A형 추진제의 임계 점화 압력은 4psia로 판단되었고, AP의 일부를 HMX와 HNIW로 $5\sim15%$ 치환한 니트라민계 혼합형 추진제(B형)에서는 임계 압력은 0.4psia, 점화지연시간은 50% 이상 향상되었다. 이러한 이유는 HMX나 HNIW 성분이 AP에 비해 낮은 온도$(\sim220^{\circ}C)$에서 발열 분해되는 특성에 기인되는 것으로 보인다. 점화도움물질인 $B/KNO_3$를 추진제 표면에 코팅한 결과, 15% 정도 점화성이 개선되는 효과를 보였다. $B/KNO_3$ 점화제에 2차 결합제로 NC를 소량 사용하고, 이를 추진제 그레인의 점화도움물질로 적용하였다.

• 전자공학회논문지A
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• 제31A권7호
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• 대한화학회지
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• 제35권3호
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• pp.196-203
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• 1991

25$^{\circ}$C 때 벤조산과 메타 및 파라위치에 할로겐(F, Cl, Br)이 치환된 $pK_a$값을 메탄올-물 혼합용매(0∼80% 메탄올) 중에서 Fuoss-Kraus 식에 근거한 전도도법과 Gelb의 전도도법을 이용하여 결정하였다. 할로겐 치환기에 따른 벤조산의 $pK_a$ 변화를 전자받게 유도효과와 전자주게 공명효과로 복합시킨 치환기 상수(${\sigma}_1$ 및 ${\sigma}_R$)로써 논의하였다. ${\sigma}_1$가 $D^{-1}$에 대하여 양(+)의 기울기를 갖는 직선성을 보인 반면 ${\sigma}_R$은 $D^{-1}$에 대하여 음(-)의 기울기를 갖는 직선성을 보이고 있는데, 이를 field effect의 유전상수 의존성과 할로겐 치환기의 ${\pi}$-고립쌍 전자와 이온화 중심간의 through-space ${\pi}$-상호작용으로 해석하였다.