• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.105-109
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• 2002

The wet etching characteristics of magnetic materials such as NiFe and CoFe were investigated in terms of etch rate and etch profile by using variouus etching solutions (etchants). Among the various etching solutions, HNO$_3$, HCl, and H$_2$SO$_4$were selected for the etching of magnetic materials and showed distinct results. In the case of NiFe films, faster etch rate were obtained with HNO$_3$solution. When NiFe films ere etched with HCl solution, white etch residues were found on the surface of etched films. From FEAES analysis of these etch residues, they were proved to be by-product from the reaction of NiFe with Cl element. CoFe thin films showed the similar trend to the case of NiFe films. They were etched fast in HNO$_3$ solution while Chl solution represented slow etching. The etch profiles of CoFe films showed smooth etch profile but revealed the partial etching around the patterns in HNO$_3$solution of relatively high concentration. It was observed that the etched surface was clean and smooth, and that white etch residues were also remained on the etched films.

• 한국동물학회:학술대회논문집
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• 한국동물학회 1995년도 한국생물과학협회 학술발표대회
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• pp.243.2-243
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• 1995

No Abstract, See Full Text

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 하계학술연구발표회
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• pp.91-93
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• 2008

• 대한기계학회논문집B
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• 제28권1호
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• pp.9-15
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• 2004

$CO_2$ is a well-known green house gas as well as the major source of global warming. Many researchers have studied to reduce $CO_2$ emission in combustion processes. Among the method for reducing $CO_2$ emission, oxygen-enriched combustion has been proposed. Because its adiabatic flame temperature is relatively too high, existing facilities must be changed or the flame temperature in the combustion zone should be reduced. The combustion characteristics, composition in the flame zone, temperature profile and emission gases were investigated experimentally for the various oxygen-enriched ratios(OER) by the addition of $CO_2$, under constant $O_2$ flow rate. Results showed that the reaction zone was quenched and broadened as the addition of $CO_2$ was increased. The emission of NOx in flue gas was decreased as decreasing temperature in reaction zone. It was also shown that the reaction was delayed by the cooling effect. As the addition of $CO_2$ was increased, the composition of CO in the flame zone was increased due to the increase of reaction rate by increasing mixing effect of oxidant/fuel at OER=0％, but the composition of CO was decreased by quenching effect at OER=50％ and 100％.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1389-1394
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• 2003

$CO_2$ is a well-known green house gas, which is the major source of global warming. Many researchers have studied to reduce $CO_2$ emission in combustion processes. Among the method for reducing $CO_2$ emission, oxygen-enriched combustion has been proposed. But the adiabatic flame temperature is too high. So existing facilities must be changed, or the adiabatic flame temperature in the combustion zone should be reduced. The combustion characteristics, composition in the flame zone, temperature profile and emission gases were studied experimentally for the various oxygen-enriched mtios(OER) by addition of $CO_2$ under coustant $O_2$ flowrate. Results showed that the reaction zone was quenched, broadened, as addition of $CO_2$ was increased. Temperature has a large effect on the NOx emission. The emission of NOx in flue gas decreased due to the decreased temperature of reaction zone. It was also shown that the reaction was delayed by the cooling effect. As the addition of $CO_2$ was increased, the composition of CO in the flame zone increased due to the increase of reaction rate by increasing mixing effect of oxidant/fuel at OER=0, but the composition of CO decreased by quenching effect at OER=50 and 100%.

• Journal of Welding and Joining
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• 제17권6호
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• pp.46-52
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• 1999

The auxiliary gas-shielded MAG (AMAG) process, which was devised to provide an argon-rich shielding environment using small amount of argon gas, was investigated experimentally to figure out its effects on metal transfer and weld quality. Proper conditions for the AMAG process including the argon gas ratio, position and direction of the auxiliary nozzle were determined experimentally. Performance of the AMAG process was compared with that of the double gas-shielded MAG(DMAG) and MAG processes by monitoring the bead profile, current and voltage waveforms. The AMAG process was found to provide better bead profile, more stable arc and wider operating range of spray transfer mode compared with the DMAG process. In general, performance of the AMAG process using the argon ratio of 30% was comparable to that of the MAG process using 80% argon and 20% CO₂ gas.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• 한국레이저가공학회지
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• 제12권2호
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• pp.7-10
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• 2009

In this paper, we study experimentally the local polishing of $SiO_2$ surface using the $CO_2$ laser. For laser local polishing, we polished to remove the grooves or to be reformed the surface of grooves after forming the grooves on the material surface. We measured the reflectance, transmittance, and beam profile in order to measure the roughness of polished surface. The Atom Force Microscope (AFM) is used to measure roughness of local polishing surface. We can predict that the laser polishing contribute to the removal of generated debris and surface roughness on the micro processing.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.156-161
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• 2002

It depends on the joint configuration, dimensions and constraints on the joint whether the residual stress at the root of single-sided butt weld is tensile or not. Therefore, recommendation is generally made that high R ratio should be used in the fatigue test of this type of joint in order to prevent excessively long life caused by compressive residual stress. in this research, the residual stress profile in butt weld joint was obtained through compliance method, using successive extension of a slot and measurement of the variation of strain during the slot extension. The residual stress profile was firstly assumed to be the linear summation of Legendre polynomials up to 9th order excluding 0th and 1st order. Strain variation on the surface was measured while the slot was being extended by cutting to find out the 8 unknown coefficients of each polynomial tenn. The cut was made by the electric discharge machine. It was concluded that the residual stress near the surface stayed positive, however, it turned into the negative value as soon as it passed through 2 or 3 mm depth. Several fatigue tests were also carried out under zero stress ratio. Test results showed that fatigue life coincides well with the design cuive of butt joint in British Standards, which supports that it is tensile residual stress that exists near the weld root.

• Korean Chemical Engineering Research
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• 제43권4호
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• pp.531-536
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• 2005

포토리지스트 마스크로 패턴된 CoTb 및 CoZrNb 자성 박막에 대한 유도 결합 플라즈마 반응성 이온 식각이 $Cl_2/Ar$와 $C_2F_6/Ar$ 가스를 이용하여 진행되었고 식각 속도와 식각 프로파일 측면에서 조사되었다. $Cl_2$와 $C_2F_6$ 가스의 농도가 증가함에 따라서 자성 박막들의 식각 속도는 감소하였고 식각 경사는 낮아졌다. 자성 박막들의 식각 가스로서 $Cl_2/Ar$이 빠른 식각 속도와 가파른 식각 경사를 얻는데 있어서 $C_2F_6/Ar$ 보다 더 효과적이었다. Coil rf power의 증가는 플라즈마 내의 Ar 이온과 라디칼의 밀도를 증가시키고 dc bias voltage의 증가는 기판으로 스퍼터되는 Ar 이온의 에너지를 증가시키기 때문에 coil rf power와 dc bias voltage가 증가할수록 식각 속도와 식각 경사는 증가하였지만 패턴의 측면에서 재증착이 일어났다. 자성 박막들의 적층으로 형성된 magnetic tunnel junction stack에 고밀도 플라즈마 반응성 이온 식각을 적용하여, 높은 식각 경사와 재증착이 없는 깨끗한 식각 프로파일을 얻었다.