• Journal of the Korean Geosynthetics Society
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• v.14 no.2
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• pp.95-103
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• 2015

In this study, the causes and countermeasures for the leakage of a sea dyke under construction are analyzed. In general, the seabed ground is clearly divided from the embankment but a lot of parts show abnormal zones with low resistivity from the results of electric resistivity survey. Hence the causes of the leakage are considered as following: three-dimensional shear strain behavior, irregular compulsory replacement of the soft seabed ground with low strength and quality deterioration of the waterproof sheets during the closing process. The improvement method is determined by considering the constructability in the seawater and its velocity condition, durability, economic feasibility, similar application cases and so on. Consequently, a combination of low slump mortar and slurry grouting and injection method is selected as an optimum combination. Mixing ratio and improvement pattern are determined after drilling investigation and pilot test. The improvement boundary is separated into general and intense leakage area. The construction is performed with each pattern and the improvement effects are confirmed. The confirmed effects with various tests after completion show tolerable ranges for all of the established standards. Finally, various issues such as prediction of length of the waterproof sheet, installation of it against seawater velocity, etc. should be considered when sea dykes are designed or executed around the western sea which has high tide difference.

• Membrane Journal
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• v.4 no.3
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• pp.163-170
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• 1994

The separation of inorganic salt from amino acid solution using was performed electrodialysis. In order to review the availability of electrodialysis using isoelectric point of amino acid as a bio-separation technique, electrodialysis stacks were designed using ion exchange membrane. Separation of NaCl from amino acid solution was performed in the condition similar to amino acid fermentation process. To obtain otimum conditions of separation, leakage of amino acid depending of pH and limiting current density were measured. On the basis of optimum condition, removal of NaCl and leakage of amino acid were investigated quantitatively in batch and continuous process, and current efficiencies were also obtained. As a result of batch experiment for 11 hours each amino acid solution, removal efficiencies of NaCl were in the ranges of 96.1~96.2%. Amino acid leakage rate of glycine, methionine, alanine were 2.5, 1.7, 2.0% respectively. Current efficiencies were in the ranges of 44.5~44.6%. As a result of continuous experiment in various flow rate of each amino acid solution, it took 120 ~ 150 min to reach to steady state. Removal efficiency of NaCl was increased as the flow rate was decreased, but current efficiency was decreased. At the steady states, there were no leakage of amino acid.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.244-252
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• 2002

The electrical and dielectric behavior fort DC accelerated aging stress of P $r_{6}$ $O_{11}$-based Zno varistors cnsisting of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$ were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. The varistor ceramics with increasing sintering temperature were more densified. A more densified varistors leaded to high stability for DC accelerated aging stress. Furthermore, the stability for DC accelerated aging stress was increased with the leakage current and dtan $\delta$/dV decreasing in order of 1325longrightarrow1335longrightarrow1345longrightarrow134$0^{\circ}C$ in sintering temperature. It was found that the stability for DC stress is affected more greatly by the leakage current and dtan $\delta$/dV than the densification. It is considered that the stability of varistors for DC stress can be estimated by considering the factors, such as the densification, leakage current, and dtan $\delta$/dV. As a result, the varistor sintered at 134$0^{\circ}C$ exhibited the highest stability, with %$\Delta$ $V_{lmA}$=-1.54%, %$\Delta$$\alpha$=-2.49%, %$\Delta$ $I_{\ell}$=+240.68%, 5%$\Delta$tan$\delta$=+29.96%.96%.96%.%.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1186-1191
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• 2004

ZnO varistor ceramics which were fabricated with variation of added of 0.5～1.0 mol% Co$_3$O$_4$, were sintered at 1150 $^{\circ}C$. In the specimen added 0.7 mol% Co$_3$O$_4$, sintered density was 6.03 g/㎤ and electrical properties were superior to any other compositions. The nonlinear coefficient a and clamping voltage ratio were 83 and 1.35, respectively. But, endurance surge current in the specimen added 0.5 mol% Co$_3$O$_4$ was 7000 A/$\textrm{cm}^2$, and deviation of varistor voltage was Δ-3.23 %. As P.C.T and T.C.T environmental test were succeed in all specimens, and deviation of varistor voltage in the specimen added 0.6 mol% Co$_3$O$_4$ was Δ-0.81 %. All specimens showed good leakage current property on the High Temperature Continuous Load Test(HTCLT) for 1000 hr at 85 $^{\circ}C$ and variation rate of the varistor voltage below Δ-2.0 %.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.245-250
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• 1996

$Y_2O_3$ thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around $500^{\circ}C$ and pressure of ~$10^{-5}$Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of $Y_2O_3$ were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition. $Y_2O_3$/mixed layer/$SiO_2=170\AA/50\AA/10\AA$ structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/$Y_2O_3$/Si sturcuture, leakage current was less than $10^{-6}$A/$\textrm{cm}^2$ at 7MV/cm strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.145-145
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• 2015

처음 유기물의 인광 발견 이후 Host-dopant 시스템을 이용하여 Emission layer(EML)을 Co-deopsition 하는 방법으로 주로 인광 유기 발광 다이오드를 제작 하였다. [1] co-deposition을 이용해 만든 유기 발광 다이오드에 많은 장점이 있지만, 반대로 소자를 제작하는데 있어서는 많은 문제점을 가지고 있다. [2-4] 이러한 문제점을 개선하기 위하여 co-deposition 대신 non-doped Multi Quantum Well(MQW) 구조를 사용하여 doping 하지 않는 방법을 이용하는 논문들이 보고 되고 있다. Hole, electron, exciton이 MQW 구조를 지나면서, dopant well 안에 갇히게 되고, 그 안에서 다른 layer 간에 energy transfer와, hole-electron leakage가 줄어 들어, 더 효율적인 유기 발광 다이오드를 만들 수 있게 된다. [5-7] 이 연구에서는 CBP를 Potential Barrier로 사용하고, Ir(ppy)3 (Green dopant), Ir(btp)2 (Red dopant) 를 각각 Potential Well로 사용하였고, 두께는 CBP 9nm, dopant 1nm로 하였다. 이러한 소자를 만들고 dopant를 3개의 well에 적당히 배치하여, 각 well에서의 실험적인 발광 량 과, EML 안에서의 발광 mechanism 그리고 각 potential barrier를 줄여가며 dexter, forster에 의한 energy transfer에 대하여 알 수 있었다.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.298-302
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• 2007

The electrical properties and its stability of Zn-Pr-Co-Cr-Tb-based varistors were investigated for different sintering temperatures. As the sintering temperatures increased, the varistor voltage decreased in the range of $705.2{\sim}299.1$ V/mm, the nonlinear coefficient decreased in the range of $42.4{\sim}31.7$, and the leakage current was in the range of $1.0{\sim}1.7\;{\mu}A$. The stability of electrical characteristics increased with the increase of sintering temperature. The varistors sintered at $1350^{\circ}C$ marked the high electrical stability, with $%\Delta$ $V_{1mA}=+0.1%,\;%\Delta{\alpha}=+3.2%$, and $%{\Delta}I_L=+117.6%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24\;h$.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1115-1122
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• 1994

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).

• Toxicological Research
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• v.11 no.2
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• pp.199-203
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• 1995

The focus of this study was to investigate that cellular parameters and glucose uptake might be altered by extracellular calcium and starvation. Addition of 1 mM $Ca^{++}$ to hepatocytes (equalling to the free calcium concentration of blood) significantly increased intracellular $Na^+$ and decreased $Na^+$ & LDH leakage. This pertains to the hepatocytes of control rats as well as those of rats fasted for 24 and 48. hr. These effects might be come from the membrane-stabilizing effects of calcium. But calcium had no effects on cell volumes, superoxide-formation and glucose uptake. Actually hepatocytes of starved rats showed changes in several cellular parameters. Starvation increased LDH leakage, glucose uptake and the total concentration of $Na^+$ and $Na^+$ whereas it markedly decreased cell volumes. Since total tonicity remained unchanged, intracellular $Na^+$ and $Na^+$ could contribute to a higher share of total osmolarity in starvation. Starvation increased the cytoplasmic pH because $R-NH^{3+}$ions and their corresponding counterions disappeared. This increase may be related to suppress the protonization of amino groups in proteins. Starvation decreased hepatic glycogen, a major compound that affects cytosolic volume of hepatocytes. The data indicate that starvation increases the glucose transport activity. The possible molecular basis will be discussed.