• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.242-246
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• 1999

For the fluorination of $CF_2Cl_2$, the yield of $CF_4$ was found to be increased with the contact time and the reaction temperature. When the mole ratio of HF/$CF_2Cl_2$ is 3 or above, the yield of $CF_4$ was attained to 100% at $370^{\circ}C$ and contact time of 3 seconds. In the case of the fluorination of $CCl_4$ with HF, the yield of $CF_4$ was obtained above 90% at the reaction temperature of $500^{\circ}C$, the contact time of 3 seconds, and the mole ratio of HF/$CCl_4$ of 5.

• Applied Chemistry for Engineering
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• v.4 no.2
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• pp.318-323
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• 1993

Pentachloroethane($CHCl_2CCl_3$) was synthesized and reacted with hydrogen fluoride using antimony pentahalide catalyst($SbCl_xF_y$) in order to manufacture HCFC-123$(CF_3CHCl_2)$, a potential CFC-11$(CFCl_3$) substitute candidate. Products analyses showed the fluorination proceeds through fluorine-chlorine exchanges between $HF/SbCl_xF_y$ and $SbCl_xF_y/CCl_3CHCl_2$ respectively. The degree of fluorination of $CCl_3$ group in pentachloroethane was greatly affected on the reaction temperature, but the effect of catalyst concentration was relatively small. Mechanistic study was also performed to elucidate the pathway to the formation of side-products such as $CCl_3CFCl_2$, $CFCl_2CFCl_2$ and $CF_2ClCFCl_2$.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1512-1514
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• 2001

In this work, PZT thin films were etched as a function of $Cl_2$/Ar and additive $CF_4$ into $Cl_2$(80%)/Ar(20%). The etch rates of PZT films were 1600 $\AA$/min at $Cl_2$(80%)/Ar(20%) gas mixing ratio and 1973 $\AA$/min at 30% additive $CF_4$ into $Cl_2$(80%)/Ar(20%). Therefore the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. From XPS and SIMS analysis, metal halides and C-O, FCI and $CClF_2$ were detected. The etching of PZT films in Cl-based plasma is primarily chemically assisted ion etching and the remove of nonvolatile etch byproducts is the dominant step. Consequently, we suggest that the increase of Cl radicals and the volatile oxy-compound such as $CO_y$ are made by adding $CF_4$ into $Cl_2$/Ar plasma. Therefore, the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. The etched profile of PZT films was obtained above 70$^{\circ}$ by the SEM micrograph.