• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.556-560
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• 2008

The effects of Nb and Co ion substitution on the dielectric and magnetic properties of the multiferroic $BiFeO_3$ thin films have been investigated. Heteroepitaxial $BiFeO_3$ thin films were deposited by Pulsed Laser Deposition method. Nb substitution decreased the leakage current by 6 orders of magnitude and Co substituted $BiFeO_3$ thin films showed an enhanced magnetization, 2 times larger than that of un-substituted $BiFeO_3$. Through the co-substitution of Co and Nb, $BiFeO_3$ thin films with a low leakage current and an enhanced magnetization could be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.492-496
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• 2004

In this study, (0.96 －x)(PSN-PZT)－xBF－0.04 PNW＋0.3wt%MnO$_2$＋0.6wt%CuO ceramics were fabricated with the variations of the amount of BiFeO$_3$substitution and sintering temperature for the development of modified ceramics which can be sintered in the low temperature($\leq$100$0^{\circ}C$ ), and their microstructural, dielectric and piezoelectric characteristics were investigated. As the amount of BiFeO$_3$ substitution was increased, the density, mechanical quality factor(Q$_{m}$) and electromechanical coupling factor(k$_{p}$) showed the maximum value at each of sintering temperature. At sintering temperature of 98$0^{\circ}C$ and BiFeO$_3$substitution of 2 mol%, the density, dielectric constant and electromechanical coupling factor(k$_{p}$) showed the maximum value of 7.84 g/㎤, 1415 and 0.49, respectively. And at sintering temperature of 95$0^{\circ}C$ and BiFeO$_3$substitution of 3mol%, mechanical quality factor showed the maximum value of 1062. 1062.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.787-791
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• 2000

Samples with the nominal composition, Bi2-xGexSr2CaCu2O8＋$\delta$ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared by the solid-state reaction method. We have studied the effect of substitution Ge for Bi and investigated the superconducting properties by changing oxygen content with Ge substitution. It was found that temperature difference, ΔK, between TCon and TCzero was considerably smaller in the samples prepared by the intermediate pressing method than that in the samples by the solid-state reaction method. We found the solubility limit of Ge to the 80 K single phase was around x=0.3. Within the solubility limit, lattice constant c decreased with the increase of x. In the region of the 80K single phase, the onset critical temperature TCon increased and excess oxygen content decreased with increase of x.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.577-580
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• 2015

In this paper, in order to develop the composition ceramics with the outstanding piezoelectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics substituted with $BiFeO_3$ were prepared by the conventional solid-state reaction method. The addition of small amount of $Li_2CO_3$ and $CaCO_3$ as sintering aids decreased the sintering temperature of the ceramics. The effects of $BiFeO_3$ substitution on their piezoelectric and dielectric properties were investigated. when 0.015 mol $BiFeO_3$ was substituted, the optimal physical properties of $d_{33}=590pC/N$, $E_c=8.78kV/mm$ were obtained.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.659-663
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• 1998

The effect of Bi-substitution in $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ ceramic was studied on the formation of crystal phases, microstructure, and microwave dielectric properties. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$, solid solution (0$\leq$x$\leq$0.2) were formed by Bi-substitution into the Nd site of $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ ceramics. Average grain size increased with Bi-substitution. Dielectric constant(${\varepsilon}_r$) increased from 84 to U8, and the temperature coefficient of resonant frequency(${\tau}_f$) decreased from 44 ppm/$^{\circ}C$ to -30 ppm/$^{\circ}C$ when Bi contents increased up to x=0.2 in $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ solid solutions. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ solid solutions with x=0.04~0.08 showed the most superior microwave dielectric properties, those are ${\varepsilon}_r$= 89-92, Q . f = 5855~6091 GHz, and (${\tau}_f$)= -7.5-7.5 ppm/$^{\circ}C$.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.434-439
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• 1997

It this paper, the piezoelectric and electro-induced strain properties of (P $b_{1-}$2x/3/B $i_{x}$ )[N $i_{1}$3/N $b_{2}$3/)$_{0.4}$( $Ti_{0.6}$Z $r_{0.4}$)$_{0.6}$] $O_3$ceramics (x=0, 0.005, 0.02) were investigated with the substitution of B $i^{3+}$, and the feasibility of the application for bimorph actuator was evaluated by measuring the dynamic properties of the piezoelectric bimorph fabricated with above ceramics. Dielectric constant was enhanced with the increase of B $i^{3+}$ substitution, and appeared the maximum value of 5032 at x=0.01 composition. Increasing the substitution of B $i^{3+}$, the electromechanical coefficient( $k_{p}$ , $k_{31}$ ) was increased up to the substitution of 0.5 mol% B $i^{3+}$, showed the value of 0.656, 0.439, respectively. The piezoelectric constant( $d_{33}$ $d_{31}$ ) had the highest value of 344, 825 with the substitution of 0.5 mol% B $i^{3+}$. The strain, generated by 60 Hz AC electric field, had the largest value of 1200($\times$10$^{-6}$ $\Delta$1/1) in the composition with the substitution of 0.5 mol% B $i^{3+}$. The dynamic properties of the bimorph actuator, fabricated with the composition substitution of 0.5 mol% B $i^{3+}$, showed the largest value of 325 $\mu$m at $\pm$150 V square pulse. square pulse.are pulse..

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.66.2-66
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• 2000

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.558-567
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• 2001

본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.147-147
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• 2013

Multiferroic material $BiFeO_3$ (BFO) is a typical multiferroic material with a room-temperature magnetoelectric coupling in view of high magnetic- and ferroelectric-ordering temperatures (Neel temperature $T_N$ ~ 647 K and Curie temperature TC ~1,103 K). Rare-earth ion substitution at the Bi sites is very interesting, which induces suppressed volatility of the Bi ion and improved ferroelectric properties. At the same time, the Fe-site substitution with magnetic ions is also attracting, since the enhanced ferromagnetism was reported. In this study, BFO, $Bi_{0.9}Dy_{0.1}FeO_3$ (BDFO), $BiFe_{0.97}Co_{0.03}O_3$ (BFCO) and $Bi_{0.9}Dy_{0.1}Fe_{0.97}Co_{0.03}O_3 $ (BDFCO) compounds were prepared by conventional solid-state reaction and wet-mixing method. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h. The samples were immediately put into an oven, which was heated up to 800oC and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies). Dy and Co co-doping at the Bi and the Fe sites induce the enhancement of both magnetic and ferroelectric properties of $BiFeO_3$.