• Journal of the Korean Institute of Telematics and Electronics
• /
• v.17 no.1
• /
• pp.36-39
• /
• 1980

Studies have been perfor mad on the normalization of V-I characteristics, the dependence of current runaway on the applied step voltage and the analysis of the current channet in the sintered 5Fe$_2$O$_3$-5Bi$_2$O$_3$. From the measurement of snitching Properties of the sintered 5Fe$_2$O$_3$-5Bi$_2$O$_3$, it is exe]twined that the electrical switching mechanism is that of thermal ionic breakolown.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.373-378
• /
• 2000

There was a great difference in the formation kinetics of $TiO_2$ and $Bi_2O_3$ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of $TiO_2$. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt $Bi_4Ti_3O_{12}/Si$ interface. In addition, the crystallinity of $Bi_4Ti_3O_{12}$ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by 1/2~1/3 of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for $Bi_4Ti_3O_{12}$ film deposited by pulse injection method.

• Journal of the Korean Magnetics Society
• /
• v.13 no.6
• /
• pp.246-250
• /
• 2003

The electromagnetic properties of Ni$\_$0.8/Zn$\_$0.2/Fe$_2$O$_4$ having stable characteristics in high frequency range were investigated as functions of Bi$_2$O$_3$, CaO contents. Power loss increased in proportion to the amount of Bi$_2$O$_3$ up to 0.3 wt％ and decreased over 0.3 wt％. Also, permeability increased with Bi$_2$O$_3$ contents. The lowest power loss and highest resonance frequency were obtained to the specimens added Bi$_2$O$_3$ of 0.7wt％ and CaO of 0.3 wt％ due to creation of resistivity layers in the grain boundaries originated by the solid solution of Bi$_2$O$_3$ and CaO.

• Journal of the Korean Ceramic Society
• /
• v.30 no.5
• /
• pp.397-403
• /
• 1993

Widely used dielectrics, barium titanate was promising material for ceramic capacitor. It was produced by specific formulation with various dopants-La2O3, ZrO2, SnO2, CaZrO3, CaTiO3, CaSnO3, Bi2O3, and etc.-according to demanded properties of capacitor. In this study, we would examinate the study of dielectric properties and temperatuer characteristics (T.C.) with the amount of Bi2O3. The sample was prepared with [BaTiO3]10＋[BaZrO3, SnO2, La2O3, ZrO2]10 and Bi2O3 varied from 1.0, 1.5, 2.0, 2.5 to 3.0wt%. After milling and mixing for 15hrs, each sample was dried and then pressed at 700kg/$\textrm{cm}^2$ into pellets. Pellets were fired at 131$0^{\circ}C$, for 3hrs in air. As the result of measurements, dielectric constant, break down voltage, and insulation resistance were increased with the amount of Bi2O3, and the resonant frequency was shifted from high frequency to low frequency range. In the case of temperature characteristics, capacitance change rate was symmetrically changed at -$25^{\circ}C$ and ＋85$^{\circ}C$ respectively. Therefore, it is recognized that the temperature characteristics can be moderated with doping Bi2O3 in our study.

• The Korean Journal of Ceramics
• /
• v.4 no.2
• /
• pp.83-89
• /
• 1998

The structure refinements and the electrical and magnetoelectric measurements were performed for BIT.1BF and BIT.2BT. The tetragonal distortion of the ab plane became lessened with the addition of $4BiFeO_3 into Bi_4Ti_3O_{12}$ significantly. However, the tilting of the outer-oxygen octahedra of the perovskite unit and the elongatin of the $(Bi_2O_2)^{2+}$ layers became more pronounced. For the both phases, the bariations of dielectric properties and electrical conductivities at high temperatures showed that the ferroelectic I-rerroelectric II phase transition existed before reaching the Curie temperature. The electrical conductivity became higher with the increase of $Fe^{3+}$ ions, implying that the electron transfer increased correspondingly. The magnetoelectric effect was observed linear up to ~8 kOe, which was stronger in BIT.1BF than BIT.2BF. This behavior indicates that the distortion of the ab plane may affect the induced polarization as well as magnetic moment.

• Korean Journal of Materials Research
• /
• v.21 no.10
• /
• pp.563-567
• /
• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• Journal of the Korean Electrochemical Society
• /
• v.8 no.1
• /
• pp.17-23
• /
• 2005

The electrochemical behaviors of polycrystalline silver electrodes in 8M KOH solutions containing $Bi_2O_3$ were studied under various conditions by cyclic voltammetry, potentiostatic and galvanostatic techniques as well as the morphology of the silver oxide structures by SEM. It was found that three new compounds comprising silver, bismuth, and oxygen as well as $Bi_2O_3$, $Ag_2O$ and AgO were formed during the electrochemical oxidation of silver. In addition, the potentiostatic current transients were characterized by the appearances of the first current peaks corresponding to the formation of silver oxides, and the second current peaks corresponding to the Ag-Bi-O compounds, indicating the presence of the nucleation and 3D growth mechanism, in the potential regions of $Ag_2O$ and AgO, respectively. Microscopic examinations showed that two types of silver (I) oxide morphologies are formed in the potential region of $Ag_2O$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.200-201
• /
• 2007

The SBT($SrBi_2Ta_2O_9$) thin films with $Bi_2O_3$ buffer layer were deposited on Pt/Ti/$SiO_2$/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth during the process due to its volatility results in an obvious non stoichiometry of the films and the presence of secondary phases. $Bi_2O_3$ buffer layer was found to be effective to achieve the low temperature crystallization and improve the ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various post annealing of $Bi_2O_3$ buffer layer were observed as various annealing temperature, using X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Keithley 237 and HP 4192A Impedance Analyzer.

• Progress in Superconductivity
• /
• v.4 no.2
• /
• pp.148-152
• /
• 2003

We have observed the temperature dependences of Bi $L_{III}$ edge spectra by extended X-ray absorption spectroscopy for a high quality single crystal and a powder of the $Ba_{0.6}K_{0.4}BiO_3$ superconductor. $Ba_{0.6}K_{0.4}BiO_3$ has the cubic structure and metallic states. The deformation of the $BiO_{6}$ octahedra, which is due to the anomalies of the Bi-O and Bi-Ba bond length, was showed by the double-shell fit. It was clearly found that these anomalies are owing to the difference in the strength of Bi-O bonds. The temperature dependences of both bond lengths and the Debye-Walter factor ${\sigma}^2$ of the Bi-O and Bi-(Ba,K) bond are discussed to illustrate local structural features of the $Ba_{0.6}K_{0.4}BiO_3$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.05a
• /
• pp.3-6
• /
• 1988

Electrical and magnetic properties of $Y_1Ba_2Cu_3O_7-y$ sintered with $Bi_2O_3$ have been investigated by levitation experiment and the measurement of electrical resistivity. The effects of $Bi_2O_3$ addition on the microstructure of the sintered specimens were also investigated. The electrical resistivity in the normal state is smaller in $Y_{0.85}Bi_{0.15}Ba_2Cu_3O_{7-y}$, where the Bi is substituted into Y site, than in the basic compound $Y_1Ba_2Cu_3O_{7-y}$ due to improved microstructure. On the other hand, the microstructure is poor and electrical resistivity is larger in the $Y_1Ba_2Cu_3O_{7-y}$ sintered with excess $Bi_2O_3$. It appears that the impurity in grain boundary affect the electrical properties significantly but has little effect on the magnetic property.