• 한국결정성장학회지
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• 제8권3호
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• pp.407-410
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• 1998

$RuO_2$를 하부전극으로 적용한 (Ba,Sr)$TiO_3$[BST] 박막의 Sputtering 가스내 $O_2/Ar$ 비에 따른 특성을 고찰하였다. $O_2/Ar$ 비가 1/9에서 5/5로 증가함에 따라 BST 박막의 유전상수는 135에서 190로 증가한 반면, 누설전류 특성은 $1.9{\times}10^{-7}\; A/{\textrm}{cm}^2$에서 $1.7{\times}10^{-6}; A/{\textrm}{cm}^2$로 저하되었다. $O_2/Ar$ 비 증가에 따른 BST 박막의 결정성의 향상에도 불구하고 BST 박막의 표면거칠기의 증가와 BST/ $RuO_2$계면에서의 산소결핍 지역의 확장 등이 BST 박막의 누설전류 특성의 저하를 초래하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.55-56
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ($Ba_{0.6}Sr_{0.4}TiO_3$), PZT ($Pb_{1.1}(Zr_{0.52}TiO_{0.48})O_3$) and BTO ($BaTiO_3$) ferroelectric film are fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST, PZT, BTO films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• 한국세라믹학회지
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• 제38권5호
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• pp.492-498
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• 2001

Ba$_{0.5}$Sr$_{0.5}$TiO$_3$타겟을 이용 Pt/Ti/SiO/Si 기판 위에 R.F magnetron sputtering 방법으로 BST 박막을 증착하여 다양한 열처리 조건에 따른 BST 박막의 전기적 성질(정전용량, 누설전류)에 대해 박막의 결정성과 미세구조의 연관성에 대하여 연구하였다. BST 박막의 유전상수는 grain size에 영향 받으며, 열처리 온도가 증가할수록 유전상수는 증가함을 보였고 온도에 따른 누설전류는 저전압 영역에서는 Hopping conduction, 고전압 영역에서는 Schottky conduction mechanism을 따르는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.162-162
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• 2013

Magnetic properties of 3d transition metals were determined by exchange interaction between magnetic ions that was characterized by the exchange integral. Bulk Mn material is one of transition metals that have been well known as an anti-ferromagnetic material due to an anti-parallel spin with negative exchange integral. Here we report on the MBE growth of Mn on $BaTiO_3$ (001) substrate and induced ferromagnetism. The bcc ${\alpha}$-Mn single crystal film has been grown on $BaTiO_3$ (100) substrate. The XRD and Raman results indicated that the structural phase transitions of $BaTiO_3$ substrate induced a lattice distortion at the interface. Consequently, the grown Mn film exhibits ferromagnetism with strong saturation magnetization of 495 emu/$cm^3$ at 320 K. The electrical resistivity of the Mn film strongly depended on the crystal structure of $BaTiO_3$ substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

• 전자공학회논문지A
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• 제33A권2호
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• pp.114-121
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• 1996

Thin film Ba$^{0.7}Sr^{0.3}TiO^{3}$ (BST) capacitors were fabricated on SiO$_{2}$/Si substrates by RF magnetron sputtering method and characterized at microwave frequencies ranging from 40 MHz to 1GHz to examine the dielectric dispersion of the capacitors. The BST thin films were electrode material of BST thin films capacitor which is known as one of the best electrode materials for BST films. 50$\AA$-thick titanium (Ti) layers were introduced to increase adhesion between bottom Pt and SiO$_{2}$. The leakage current density of the capacitors was about 1.7${\times}10^{7}A/cm^{2}$ at 1.5V and the dielectric constant was about 140 at 1MHz. Microwave measurement patterns having a coplanar waveguide type were fabricated and their S parameters were measured using network analyzer. After de-embedding parasitic components in microwave measurement patterns nearly frequency-invariant dielectric constant of about 120 was extracted in the measurement range of 40 MHz to 1 GHz.

• 한국전자통신학회논문지
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• 제15권1호
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• pp.39-44
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• 2020

유리기판위에 스퍼터링법으로 비정질 BaTiO₃막을 증착시켰다. 증착된 BaTiO₃ 막을 코로나 폴링을 하여 광학적 특성을 조사하였다. 가시광영역에서 투과율은 80% 이상으로 좋았으며, 비선형광학 특성은 폴링 조건에 따라 영향을 받으며, 크기는 1.15pm/V였다. 장기특성도 한달이 지나도 60%이상 유지하였다. 또한 BaTiO₃ 박막으로부터 녹색광 발생을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.362-363
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• 2006

In this study, the filter was designed for tuning center frequency and fabricated using ($Sr,Ba)TiO_3$ ferroelectrics and $YBa_2CuO_7$ high temperature superconductor thin film. The best result in figure of merit was 35 when the $Ba_{0.5}Sr_{0.5}TiO_3$ thin film deposition temperature was $600^{\circ}C$, the post anneal condition was $600^{\circ}C$, 10min in 1atm, $O_2$. When using $20{\mu}m$ IDC pattern gap. The higher tunability was obtained than using $30{\mu}m$ pattern gap.

• 한국세라믹학회지
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• 제43권1호
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• pp.62-67
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• 2006

Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) using 2 keV $He^+$ ion was applied to study the geometrical structure of the $BaTiO_3$ thin film which was grown on the MgO(100) surface. Hetero-epitaxial $BaTiO_3$ layers were formed on the MgO(100) surface by thermal evaporation of titanium followed first by oxidation at $400^{\circ}C$, subsequently by barium evaporation, and finally by annealing at $800^{\circ}C$. The atomic structure of $BaTiO_3$ layers was investigated by the scattering intensity variation of $He^+$ ions on TOF-ICISS and by the patterns of reflection high energy electron diffraction. The scattered ion intensity was measured along the <001> and <011> azimuth varying the incident angle. Our investigation revealed that perovskite structured $BaTiO_3$ layers were grown with a larger lattice parameter than that of the bulk phase on the MgO(100) surface.

• 한국재료학회지
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• 제10권9호
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• pp.607-611
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• 2000

고밀도 DRAM에서 박막 커패시터로의 적용을 위해 Zr이 첨가된 (Ba(sub)1-x, Sr(sub)x)TiO$_3$<원문차조> 박막이 r.f. magnetron sputter-ing 법에 의해 제조되었다. 증착된 박막들은 다결정질 구조를 보였으며 증착압력이 감소함에따라 Zr/Ti의 비가 현저히 증가하였으며 본 연구에서는 얻어진 박막들은 100kHz에서 380∼525의 유전상수값을 나타냈다. 전압에 따른 커패시턴스와 분극량의 변화는 이력특성을 크게 보이지 않아 상유전상으로 형성되었음을 보였다. 누설전류밀도는 증착압력이 감소함에 따라 작아지는 경향을 보였고 10mTorr이상에서 증착된 박막의 경우 200kV/cm의 전계에서 10(sup)-7∼10(sup)-8A/$\textrm{cm}^2$의 차수를 갖는 누설전류밀도를 보여 본 연구에서 제조된 (Ba(sub)1-x, Sr(sub)x)(Ti(sub)1-x, Zr(sub)x)O$_3$<원문참조>박막은 고밀도 DRAm을 위한 커패시터에의 적용가능성을 보였다.