• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1287-1289
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• 2009

Three different fluoride compounds were used for preparation of $BaAl_2S_4$:Eu thin-films. The emission intensity of these devices were higher than that of the thin-films deposited without fluoride materials, and the appropriate annealing temperature decreased with fluoride dopants. It is related to the fluoride compounds accelerate the crystallization of $BaAl_2S_4$ at low temperature.