• Journal of Korean Home Economics Education Association
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• v.5 no.1
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• pp.133-141
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• 1993

The ability of the meal management of the middle and high school girls in kangweon area was surveyed by Likert scale questionnaire. The results were as follows: 1. The ability of the meal menagement of the middle school girls have good marks in table etiquette as 3.93 point, in using cooking apparatus as 3.86 points, in sanitation management as 3.76 points and in food selection as 3.70 points, but not so good in food preparation as 3.56 points, in meal planning as 3.22 points and in table setting as 3.20 points. 2. For the high school girls they have good marks in table etiquette(3.99 points), using cooking apparatus(3.96 points) food selection(3.95 points) and sanitation management(3.93 points) using cooking apparatus(3.96 points), food selection(39.5 points)and sanitation managment (3.93 points), but not so good in food preparation(3.64 points) meal planning and sanitation manabement(P<0.001) but no significant difference in food preparation, using cooking apparatus and table etiquette between middle and high school girls. In general they have a significant difference in ability of meal management between middle and high school girls.

• BMB Reports
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• v.35 no.4
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• pp.377-383
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• 2002

Arsenic trioxide ($As_O_3$) was recently demonstrated to be an effective inducer of apoptosis in patients with relapsed acute promyelocytic leukemia (APL) as well as patients with APL in whom all-trans-retinoic acid and conventional chemotherapy failed. Chronic myelogenous leukemia cells are highly resistant to chemotherapeutic drugs. To determine if $As_O_3$ might be useful for the treatment of chronic myelogenous leukemia, we examined the ability of $As_O_3$ to induce apoptosis in K562 cells. In vitro cytotoxicity of $As_O_3$ was evaluated in K562 cells by a MTT assay: the $IC_50$ value for $As_O_3$ was determined to be $10\;{\mu}m$. When analyzed by agarose gel electorphoresis, the DNA fragments became evident after incubation of the cells with $20\;{\mu}m$ $As_O_3$ for 24 h. We also found morphological changes and chromatin condensation of the cells undergoing apoptosis. Activation of caspase-3 was observed 6 h after treatment with $20\;{\mu}m$ $As_O_3$ by a Western blot analysis. Next, we examined the MAP kinase-signaling pathway of $As_O_3$-induced apoptosis in K562 cells. $As_O_3$ at $10\;{\mu}m$ strongly induced the activation of p38, inhibited $As_O_3$ induced apoptotic cell death. These results suggest that $As_O_3$ is able to induce the apoptotic activity in K562 cells, and its apoptotic mechanism may be associated with the activation of p38.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.79-84
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• 1996

A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.141-145
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• 1991

The effects of the melt stoichiometry on the concentration of electron and hole traps formed by intrinsic defects of LEC GaAs were studied employing DLTS measurement technique. The concentration of EL2 were varied from $10^{16}cm^{-3}$ to $10^{11}cm^{-3}$ when the arsenic atomic fraction in the melt ([As]/{[As]+[Ga]} varied from 0.5 to 0.42. Specifically, when the fraction falls below 0.46, the 띠2 concentration start to decrease sharply. For 68meV and 77/200meV traps, their concentration increase inversely with the arsenic atomic fraction and have the values in the range of TEX>$10^{15}cm^{-3}$ and $10^{14}cm^{-3}$, respectively. It is, therefore, concluded that these hole traps originated from the intrinsic acceptor defects including $GS^{AS}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.62-62
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• 2003

고밀도 유도결합 플라즈마(high density inductively coupled plasma) 식각은 GaAs 이종접합 양극성 트랜지스터(HBTs)와 고속전자 이동도 트랜지스터(HEMTs)와 같은 GaAs 기반 반도체의 정교한 패턴을 형성하는데 더욱 많이 이용되고 있다 본 연구는 고밀도 플라즈마 소스(source)인 평판형(planar) 고밀도 유도결합 플라즈마 식각장치를 이용하여 $BCl_3$ 와 $BCl_3/Ar$ 가스에 따른 GaAs 식각결과를 비교 분석하였다. 공정변수는 ICP 소스 파워를 0-500W, RIE 척(chuck) 파워를 0-150W, 공정압력을 0-15 mTorr 이었다. 그리고 가스 유량은 20sccm(standard cubic centimeter per minute)으로 고정시킨 상태에서 Ar 첨가 비율에 따른 GaAs의 식각결과를 관찰하였다. 공정 결과는 식각률(etch rate), GaAs 대 PR의 선택도(selectivity), 표면 거칠기(roughness)와 식각후 표면에 남아 있는 잔류 가스등을 분석하였다. 20 $BCl_3$ 플라즈마를 이용한 GaAs 식각률 보다 Ar이 첨가된 (20-x) $BC1_3/x Ar$ 플라즈마의 식각률이 더 우수하다는 것을 알 수 있었다. 식각률 증가는 Ar 가스의 첨가로 인한 GaAs 반도체와 Ar 플라즈마의 충돌로 나타난 결과로 예측된다. $BCl_3$ 와 $BC1_3/Ar$ 플라즈마에 노출된 GaAs 반도체 모두 표면이 평탄하였고 수직 측벽도 또한 우수하였다. 그리고 표면에 잔류하는 성분은 Ga와 As 이외에 $Cl_2$ 계열의 불순물이 거의 발견되지 않아 매우 깨끗함을 확인하였다. 이번 발표에서는 $BCl_3$ 와 $BCl_3/Ar$ 플라즈마를 이용한 GaAs의 건식식각 비교에 대해 상세하게 보고 할 것이다.

• Proceedings of the Korean Geotechical Society Conference
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• 1999.10a
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• pp.371-378
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• 1999

A prototype computer program was developed which visualizes various kinds of geotechnical information using 3D object graphics techniques. The program integrates various kinds of geotechnical data such as surface geology map, boreholes data, geophysical data as well as man made subsurface structures. It also reads NGIS DXF map and generates digital elevation model from iso-elevation line layer of the DXF map. All the data are put into a 3D model as 3D objects. The created 3D model can be viewed and analysed in a interactive 3D way.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.104-111
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• 1998

The InGaAs/InP quantum wells(QWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of growth interruption steps on their interfacial structures were investigated by measuring photoluminescence spectra. When InP or InGaAs surface was treated under the same group V ambient, the full width at half maximum (FWHM) of the QW peak increased possibly due to the incorporation of impurities during the growth interruption time. When InP surface was treated under $AsH_3$, howerer, the PL peak showed red-shift due to the As-P exchange reaction and the change of FWHM was not remarkable. The effective thickness of InAs interfacial layer formed during $AsH_3$, treatment on the InP surface was calculated to be 1~2 monolayers. In the case of InGaAs treatment under $PH_3$, the PL peak energy and the FWHM increasied. This results suggest that $PH_3$ treatment on the InGaAs surface suppresses the incorporation of As into the subsequent InP layer and the local replacement of As by P occurs simultaneously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.8
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• pp.316-322
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• 1986

In this paper, the photodoping effect on the interface of Ag-amorphous As2S3 thin film has been investigated by measuring the resistance change of the Ag layer, the absorption coefficient of the As2S3, the optical density of As2S3 layer and the short-circuit photocurrents under light irradiation. As the experimental results, the photodissolution rate and the photodiffusion rate depends on the magnitude of photon energy absorbed in the As2S3. The sensitivity limit of the photodissolution rate at Ag layer was about 630[nm] and the sensitivity limit of the photodiffusion rate at the Ag-As2S3 interface was about 680[nm]. Also, it was found that the depth of photodiffusion was proportional to the square root of exposing time.

• BMB Reports
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• v.39 no.1
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• pp.84-90
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• 2006

During our search for macrophage stimulating compounds from medicinal plants, we isolated biopolymers from Acanthopanax sessiliflorus. Isolated fraction AS-5 showed maximum potential, and stimulated lysosonal enzymatic activity by 230% at $300\;{\mu}g/ml$. The nitric oxide (NO) producing ability of AS-5 $100\;{\mu}g/ml$ was $58\;{\mu}M$ when treated with interferon-$\gamma$ and lipopolysaccharide $20\;{\mu}g/ml$. The lymphocyte proliferating effects of isolated biopolymer fractions were also investigated. Highest lymphoproliferative activity (a 2.8-fold enhancement compared to saline treated group was exhibited by AS-3 at $200\;{\mu}g/ml$ followed by AS-5 and AS-6. The AS-3 fraction stimulated only T-lymphocytes and had little or no effect on B-lymphocyte proliferation. Partially methylated alditol acetates were prepared to elucidate the glycosyl linkage-compositions of the AS-3 and AS-5 biopolymers, and were analyzed by GC-MS. The AS-3 and AS-5 biopolymer fractions were found to contain 2,3,4-tri-O-methyl-D-glucitol, 2,3,4-tri-O-methyl-D-galacitol 3,4,6-tri-O-methyl-galacitol, 2-O-methyl-arabinitol and 2,4,6-tri-O-methyl-D-glucitol, 2,3,6-tri-O-methyl-D-galacitol linkages, respectively.