• Title/Summary/Keyword: $Ar-N_2$ plasma

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Wear Behavior of TiN Coatings Deposited by Plasma Assisted Chemical Vapor Deposition (플라즈마 화학증착된 TiN박막의 마모특성)

  • In, Chi-Beom;Cheon, Seong-Sun
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.451-458
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    • 1993
  • Wear resistant titanium nirridc(TiN) coatings Were depositecd onto bearing stcel(AISI 52100) by plasma assisted chemical vapor deposition using the gaseous mixtyre of $TiCI_4, N_2, H_2$ and Ar. The In- fluences of the choorine on the crystallinity, microhardness, adhesion. Wear. property of coatings were studied. It was found that the TiN coatings had an outstanding resistance to wear but the mechanical properties of the coatings deteriorated with the increase in the chlorine content. From wear test, many cracks in the trailing edge which was under tensile stress was investigated.

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Plasma-Induced Grafting of Poly(N-vinyl-2-pyrrolidone) onto Polypropylene Surface (폴리프로필렌 표면 위에 폴리비닐피롤리돈의 플라즈마 유도 그래프트 공중합)

  • Ji, Han-Sol;Jung, Si-In;Hur, Ho;Choi, Ho-Suk;Kim, Jae-Ha;Park, Han-Oh
    • Polymer(Korea)
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    • v.36 no.3
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    • pp.302-308
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    • 2012
  • The objective of this study is to investigate optimum reaction conditions for the grafting of poly($N$-vinyl- 2-pyrrolidone) (PVP) onto the surface of plasma-treated polypropylene film. The plasma treatment conditions were fixed as 200 W rf power, 6 LPM Ar flow rate, 30 sec treatment time, and 5 min exposure time after treatment. For graft copolymerization, we investigated the change of grafting degree with respect to reaction time, reaction temperature and $N$-vinyl-2-pyrrolidone concentration. Maximum grafting degree was obtained at the conditions of 6 h reaction time, $90^{\circ}C$ reaction temperature, and 40% $N$-vinyl-2-pyrrolidone concentration. The introduction of PVP was confirmed by ATR-FTIR, XPS, and SEM analysis.

$Ar/CH_4$ 혼합가스를 이용한 ITO 식각특성

  • 박준용;김현수;염근영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.244-244
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    • 1999
  • Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

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Effects of Process Parameters on Formation of TiN Coating Layer in Small Holes by PACVD (PACVD 방법으로 TiN 코팅시 공정변수가 작은 동공 내부의 코팅층 형성에 미치는 영향)

  • Kim, Deok-Jae;Jo, Yeong-Rae;Baek, Jong-Mun;Gwak, Jong-Gu
    • Korean Journal of Materials Research
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    • v.11 no.6
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    • pp.441-447
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    • 2001
  • A study on the TiN coating layer in small holes on the Purpose of die-casting dies application has been performed with a PACVD process. For the hole having diameter of 4 mm. the uniform TiN coating layer in the hole to the depth of 20 mm was achieved using DC pulsed power source. To understand the forming mechanism of TiN coating layer, plasma diagnosis on Ti, $N_{2}^{+}$ and A $r^{+}$ emissions was carried out during plasma coaling process by optical emirssion spectroscopy. When the duty ratio was equal or over 50%, the Peaks of Ti,$ N_{2}^{+}$ and A $r^{+}$ emission were obviously observed. While duty ratio was equal or under 28.6%, no peaks for Ti, $N_{2}^{+}$ and A $r^$ were observed and the formation of TiN coating layer was rarely observed. For the coating in 4 mm hole diameter, the coating layer with bipolar process was two times deeper than that with unipolar process.

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Dry Etching Characteristics of ZnO Thin Films for the Optoelectronic Device by Using Inductively Coupled Plasma

  • Joo, Young-Hee;Woo, Jong-Chang;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.1
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    • pp.6-9
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    • 2012
  • In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

Effects of shielding Gas Types on $CO_2$ Laser Weldability (보호가스에 따른 Tailored Blank 레이저 용접성 평가에 관한 연구)

  • 정봉근;유순영;박인수;이창희
    • Laser Solutions
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    • v.1 no.1
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    • pp.30-38
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    • 1998
  • This study includes the efface of shielding gas types on $CO_2$ laser weldability of low carbon automotive galvanized steel. The types of shielding gas evaluated are He, $CO_2$, Ar, $N_2$, 50%Ar+50%$N_2$. The weld penetration, strength, formability(Erichsen test) of Laser weld are found to be strongly dependent upon the types of shielding gas used. Further, the maximum travel speed and flow rate to form a keyhole weld is also dependent upon types of shielding gas. The ability of shielding gas in removing plasma plume and thus increasing weld penetration is believed to be closely related with ionization/dissociation potential, which determine the period of plasma formation and disappearance. Further, thermal conductivity and reactivity of gas with molten pool also give strong effect on penetration and porosity formation which in turn affect on the formability and strength.

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Surface reaction of $HfO_2$ etched in inductively coupled $BCl_3$ plasma ($BCl_3$ 유도결합 플라즈마를 이용하여 식각된 $HfO_2$ 박막의 표면 반응 연구)

  • Kim, Dong-Pyo;Um, Doo-Seunng;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.477-477
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    • 2008
  • For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

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Characteristics of ITO with surface treatment by N2, O2, Ar Plasma and UV (질소, 산소, 아르곤 플라즈마와 자외선에 의하여 표면 처리한 ITO의 특성)

  • Bae, Gyeong-Tae;Jeong, Seon-Yeong;Gang, Seong-Ho;Kim, Hyeon-Gi;Kim, Byeong-Jin;Ju, Seong-Hu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.90-90
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    • 2018
  • 디스플레이는 다수의 가로 전극과 세로 전극으로 구성되고, 전극에 신호를 주어 동작하도록 하는 원리이다. 이 디스플레이에는 전기가 통하고 투명한 전극이 필수적으로 사용되고 있고, 대표적인 투명 전극으로 ITO (Indium Tin Oxide)가 있다. ITO 박막은 $In_2O_3$에 Sn을 첨가하여 $Sn^{4+}$ 이온이 $In^{3+}$ 이온을 치환하고 이 과정에서 잉여 전자가 전기전도에 기여하는 구조이다. ITO 박막은 표면 처리 방법에 따라 표면 상태가 크게 변화한다. 플라즈마를 이용한 표면 처리는 환경오염이 적으며 강도, 탄성률 등과 같은 재료의 기계적 특성을 변화시키지 않으면서 표면 특성만을 변화시킬 수 있는 방법으로 알려져 있다[1]. UV (Ultraviolet)를 조사한 표면처리는 ITO 표면의 탄소를 제거하고, 표면 쌍극자를 형성하며, 표면의 조성을 변화시킬 수 있으며, 페르미 에너지 준위를 이동시킬 수 있어 ITO의 일함수를 증가시킬 수 있다[2]. ITO에 대한 다양한 연구가 수행되었음에도 불구하고 보다 다양한 관점에서의 연구가 지속될 필요가 있다. 따라서 본 연구에서는 다양한 조건으로 표면 처리한 ITO 표면의 일함수, 면저항, 표면 형상, 평탄도, 접촉각 등에 대해 알아보고자 한다. 세정한 ITO, 세정 후 UV 처리한 ITO (UV 처리 시간 2분, 4분 6분, 8분), 세정 후 $N_2$, $O_2$, Ar의 공정 가스를 사용하여 Plasma 처리한 ITO로 표면 처리 조건을 변화하였다. 표면 처리한 ITO의 특성은 Kelvin Probe를 이용한 일함수, 물방울 형상의 각도를 측정한 접촉각, AFM (Atomic Force Microscope)을 이용한 평탄도, 가시광선 (380~780 nm) 파장에 대한 투과도와 면저항을 측정하였다. 접촉각은 세정한 ITO의 경우 $45.5^{\circ}$에서 세정 후 UV를 조사한 ITO의 경우 UV 8분 조사 시 $27.86^{\circ}$로 감소하였고, $N_2$, $O_2$, Ar 가스를 사용하여 Plasma 처리한 ITO는 모두 $10^{\circ}$ 미만을 나타내었다. 플라즈마 처리에 의하여 접촉각이 현저하게 개선되었다. ITO의 면저항은 표면 처리 조건에 따라 $9.620{\sim}9.903{\Omega}/{\square}$로 그 차이가 매우 적어 표면처리에 의하여 면저항의 변화는 없는 것으로 판단된다. 가시광선 영역에서의 투과도는 공정 조건에 따라 87.59 ~ 89.39%로 그 차이가 적어 표면처리에 의한 변화를 나타내지는 않은 것으로 판단된다. 표면 처리 조건에 따른 평탄도 $R_{rms}$는 세정한 ITO의 경우 4.501 nm로부터 UV 2, 4, 6, 8분 처리한 경우 2.797, 2.659, 2.538, 2.584 nm로 평탄도가 개선되었다. $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우 평탄도 $R_{rms}$는 2.49, 4.715, 4.176 nm로 사용한 가스의 종류에 따라 다른 경향을 나타내었다. 표면 처리 조건에 따른 평탄도 Ra는 세정한 ITO의 경우 3.521 nm로부터 UV 2, 4, 6, 8분 처리한 경우 1.858, 1.967, 1.896, 1.942 nm를, $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우는 1.744, 3.206, 3.251 nm로 평탄도 $R_{rms}$와 유사한 경향을 나타내었다.

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Mechanisms of $Cl_2$ Molecules Dissociation in a Gas Discharge Plasma in Mixtures with Ar, $O_2.N_2$

  • Efremov, A.M.;Kwon, Kwang-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.197-201
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    • 2001
  • The influence of argon, oxygen, and nitrogen admixtures on the dissociation of $Cl_2$ molecules in a glow discharge low-temperature plasma under the constant pressure conditions was investigated. For $Cl_2/Ar$ and $Cl_2/O_2$mixtures, the concentration of chlorine atoms was observed to be a practically constant at argon or oxygen concentrations up to 50%. This invariability is a most pro bably explained by relative increase in rate of $Cl_2$ direct electron impact dissociation due to the changes in electrophysical parameters of plasma such as EEDF, electron drift rate and mean energy. For all the considered mixtures, the contribution of stepwise dissociation involving active species from gas additives (metastable atoms and molecules, vibrationally excited molecules) was found to be negligible.

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