• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.644-646
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• 2004

We have investigated luminescence properties of Ln-SiAlON materials doped with $Ce^{3+}$. Low-energy 4f${\leftrightarrow}$5d transitions were observed as compared to the luminescence of this ion doped in oxidic host-lattices.$^1$ Ce-doped Y-a-SiAlON show bright long wavelength luminescence with high absorption for 305 and 455nm excitation. In our experiment, the sintering temperature of this material(1400$^{\circ}C$) was lower than that of normal sintering temperature (1700$^{\circ}C$). However, Single phase of SiAlON was not composed we observed the YAG phase.

• 센서학회지
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• 제21권4호
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• pp.263-269
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• 2012

Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• 전기화학회지
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• 제9권2호
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• pp.64-69
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• 2006

초음파분무열분해법과 한 단계의 후열처리로 이차상이 없는 Al이 첨가된 $Li(Ni_{1/3}Co_{1/3}Mn_{1/3-x}Al_x)O_2$ (x=0.0, 0.005, 0.01. 0.05) 리튬이차전지용 양극활물질을 합성하였다. 합성된 분말은 Al의 첨가량이 많아짐에 따라서 $I_{003}/I_{104}$ 비는 감소하고 입자가 커지는 경향을 보였다. 상온에서 전류밀도 1C의 rate로 $3.0\sim4.5V$ 범위에서 충방전 시험한 결과, Al 치환량이 0.5와 1.0 at%에서는 초기용량이 180과 $184mAhg^{-1}$으로 치환하지 않았을 때의 $182mAhg^{-1}$과 차이가 없었으며, 싸이클 특성도 치환하지 않은 것과 0.5, 1.0 at% 치환한 조성에서 각각 81, 77, 81%의 방전용량이 유지되었다. 그러나 $3.0\sim4.6V$에서는 치환효과가 확실하게 나타나서, 50 싸이클 후의 치환하지 않은 것의 방전용량은 초기용량의 30%가지 감소한데 비하여 Al을 0.5 at% 치환한 것은 70%를 유지하였다. 치환에 의한 싸이클 특성 향상은 XPS 분석 결과 Al 치환이 $Mn^{3+}$의 양을 감소시켰기 때문인 것으로 사료되었다.

• 한국재료학회지
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• 제17권8호
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

• Corrosion Science and Technology
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• 제7권4호
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• pp.233-236
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• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.168-168
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• 2012

본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

• 한국결정성장학회지
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• 제6권4호
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• pp.558-563
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• 1996

첨가된 소결조제가 다른 $Si_{3}N_{4}/20$ vol% SiC 초미립복합재료의 파괴강도를 측정하였다. 소결조제로서 6 wt% $Y_{2}O_{3}$와 2 wt% $Al_{2}O_{3}$를 사용한 시편의 실온강도는 높았지만 낮은 입계상의 연화온도에 기인하여 급격한 강도저하가 나타났다. 소결조제로서 8 wt% $Y_{2}O_{3}$만을 사용한 시편의 $1400^{\circ}C$에서의 고온강도가 높았는데 이는 높은 입계상 연화온도와 입계유리상의 결정화에 기인하는 것으로 판단하였다.

• 한국표면공학회지
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• 제40권3호
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• pp.107-112
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• 2007

Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{\times}10^{-4}{\Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{\circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.