• 한국세라믹학회지
• /
• 제31권10호
• /
• pp.1169-1175
• /
• 1994

Five Al2O3/SiC/metal composites with four different particle sizes of green SiC abrasive grains are grown by the directed oxidation of an commercially available Al-alloy. Oxidation was conducted in air at 100$0^{\circ}C$, 96 hours long. Slip casted SiC-fillers were placed on the alloy or SiC powder deposited up to the required layer thickness. Their microstructures are described and measurements of density, elastic constants, frexural strength, fracture toughness and work of fracture are reported. The results are compared with those of commercial dense sintered Al2O3. The properties of produced materials have a strong relationship to not only the properties of Al2O3, SiC, Al and Si but also to the phase share and phase distribution. The composite materials are dense (0.5% porosity), tough (KIC = 3.4~6.4 MPa{{{{ SQRT { m} }}), strong ({{{{ sigma }}B = 170~345 MPa) and reasonably shrinkage free producible. The reinforcements is attained mainly through the plastic deformation of ductile metal phase.

• 한국자기학회지
• /
• 제16권6호
• /
• pp.283-286
• /
• 2006

고밀도 자기기록용 Ba-페라이트/$SiO_{2}$ 자성박막에서 계면확산 장벽으로써 ${\alpha}-Al_{2}O_{3}$ 버퍼층의 역할을 연구하였다. 열처리동안 $1900{\AA}$의 두께를 가진 비정질 Ba-페라이트/$SiO_{2}$ 박막에서 계면확산은 약 $700^{\circ}C$에서 일어나기 시작하였다. 열처리온도를 $800^{\circ}C$까지 증가시켰을 때, 계면확산은 자기특성을 저하시킬 정도로 급격히 진행되었다. 고온에서의 계면확산을 억제하기 위하여, $110{\AA}$ 두께의 ${\alpha}-Al_{2}O_{3}$ 버퍼층을 Ba-페라이트/$SiO_{2}$ 박막의 계면에 증착하여 사용하였다. Ba-페라이트/${\alpha}-Al_{2}O_{3}/SiO_{2}$ 박막에서는 $800^{\circ}C$의 고온까지 열처리하여도 계면확산이 심각하게 일어나지는 않았다. ${\alpha}-Al_{2}O_{3}$ 버퍼층에 의하여 계면확산이 억제되기 때문에 Ba-페라이트 자성박막의 포화자속밀도와 보자력이 향상되었다. 따라서 Ba-페라이트/$SiO_{2}$ 박막의 계면에서 ${\alpha}-Al_{2}O_{3}$ 버퍼층은 $SiO_{2}$ 기판 성분의 계면확산 장벽으로 사용될 수 있다.

• 한국세라믹학회지
• /
• 제29권3호
• /
• pp.223-231
• /
• 1992

CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.

• 한국세라믹학회지
• /
• 제43권10호
• /
• pp.660-665
• /
• 2006

The mechanical properties of $Al_2O_3$-SiC composites manufactured with adding various amount and size of SiC particles have been measured and analyzed. Generally, the elastic modulus of the composites shows about 50% less than that of PL-8 (45 wt% $Al_2O_3$-51 wt% $SiO_2$-4 wt% other oxides), but the flexural strength is similar with each other. The impact resistance property of $Al_2O_3$-SiC composite against high velocity copper jet was lower than that of PL-8 when SiC particles of approximately 3 $\mu$m diameter was added to. It is caused probably due to the micro-pores made by oxidation of SiC particles. However, in the case of the less-weighted $Al_2O_3$-SiC composite adding to 10 wt% SiC with average diameter of 10 $\mu$m and sintering at 1200$^{\circ}C$, the impact resistance property was improved up to 37 percent compared with that of PL-8.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권11호
• /
• pp.505-513
• /
• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2002년도 춘계학술강연 및 발표대회
• /
• pp.11-11
• /
• 2002

Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.

• 한국세라믹학회지
• /
• 제24권1호
• /
• pp.23-32
• /
• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• 대한환경공학회지
• /
• 제35권4호
• /
• pp.240-246
• /
• 2013

$SF_6$는 지구온난화지수가 가장 높은 중요한 온실가스이다. 본 연구에서는 마이크로파 조사에 따른 산화알루미늄이 혼합된 실리콘카바이드의 SF6 제거실험을 실시하였다. DRE (Decomposition and Removal Efficiencies)실험은 3,000 ppm의 $SF_6$를 사용하여 GC-TCD를 통하여 분석하였다. 산화알루미늄의 함량이 10~30 wt%까지 $SF_6$의 제거효율은 증가하였으나 산화알루미늄의 함량이 40~50 wt%에서 제거효율이 감소하였다. 특히 $900^{\circ}C$ 이상 에서 SiC-$Al_2O_3$ (20 wt%)와 SiC-$Al_2O_3$ (30 wt%)는 99.99%의 $SF_6$ 제거효율을 보여주었으며 SiC-$Al_2O_3$ (30 wt%)가 $700^{\circ}C$에서 96.72%의 제거효율을 보여주었다. 마이크로파 조사량과 산화알루미늄의 함량을 고려시 SiC-$Al_2O_3$ (30 wt%)가 $SF_6$ 제거에 가장 적절하였다. 본 연구의 결과로 마이크로파에 의한 $SF_6$ 제거시 SiC에 $Al_2O_3$의 함량 조절이 중요할 것으로 사료되어진다.

• The Korean Journal of Ceramics
• /
• 제5권1호
• /
• pp.44-49
• /
• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• 전기학회논문지
• /
• 제57권11호
• /
• pp.2015-2022
• /
• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.