• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.117-120
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• 1998

In this study, $Al_2O_3/MgO$ bilayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(P1asma Display Panel). The thickness of $Al_2O_3/MgO$ bilayer was optimized by the Matrix Theory for the fabrication of antireflection structure for 5350A wavelength. The secondary electron emission yields of as-deposited film and annealed film were measured and compared, the bilayer was considered for the applicability as PDP. XRD showed the strong (200) primary peak of MgO. The intensity of (200) peak in the film annealed at 300C was decreased. As the result of SEM analysis for MgO films and Alz03 films, it is considered that the morphology of the films were improved of roughness and it were condensed by annealing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.957-962
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• 2003

The preparation of $Al_2$O$_3$-SiO$_2$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. for the preparation of thin, continuous $Al_2$O$_3$-SiO$_2$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_2$O$_3$-SiO$_2$ upon heating to 100$0^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.307-310
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• 1998

In this paper, $Al_2$O$_3$/MgO belayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(Plasma Display Panel). $Al_2$O$_3$/MgO belayer were improved of roughness and it were condensed by annealing, and the result of XPS analysis for $Al_2$O$_3$/MgO belayer unchanged binding energy. To investigate electric characteristics, discharge properties of $Al_2$O$_3$/MgO belayer were compared with discharge minimum voltage for MgO monolayer through Ar discharge experiments.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.126-130
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• 2013

The sodium (Na) and moisture ($H_2O$) gettering phenomena were measured and analyzed in PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. PSG/$SiO_2$ passivation and Al-1%Si thin films were deposited by using APCVD (atmosphere pressure chemical vapor deposition) and DC magnetron sputter techniques, respectively. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of sodium and moisture throughout the PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. Both sodium and moisture peaks were observed strongly at the interfaces between layers rather than within the Al-1%Si thin film interconnections. Sodium peaks were observed at the interface between PSG and $SiO_2$ passivations, while moisture peaks were not observed.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.149-154
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• 1996

ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

• Korean Journal of Optics and Photonics
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• v.16 no.5
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• pp.476-478
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• 2005

We have fabricated a Fabry-Perot etalon around $1.3\;{\mu}m$ wavelength utilizing $Al_{2}O_3$ and a-Si thin films. A full width at half maximum of ${\sim}12.1nm$ and a finesse value of 53 were found from the measured resonant transmission spectra. Single thin film of $Al_{2}O_3$ was analyzed by spectroscopic ellipsometry. A refractive index of a-Si thin film was measured as 3.120 in the real part and 0.002 in the imaginary part, respectively. The thin-film pairs of $Al_{2}O_3$ and a-Si are applicable to output mirrors of vertical-cavity surface-emitting lasers at $1.3{\mu}m$ waveband.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.3
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• pp.80-87
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• 1997

As a result of experimenting the temperature characteristics of origination voltage in Al/$AL_1,O_3/PI (nL)/Au, the sample of polyimide LB film and AI/$AL_1,O_3/Cls TCNQ(lOL)/Al, the difference of work function is found between upper and lower electrodes. If polyimide LB film is accumulated with Z type or becomes imide, the polarization of the film is not made. And AI/$AL_2,O_3/C-{15}TCNQ( IOL)/ AI which is the CI5 TCNQ LB film sample doesn't show the difference of work function because it has the same upper and lower electrode and the polarization is found on the film. As a result of experiment with MIM element of LB ultra thin film, Direct current more than hun¬dreds of m V is generated and it can be used for industrial power resources in the area of electricity, electronics and information communication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.