• Title/Summary/Keyword: $Al_2O_3$ Ceramic Dielectric

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The Properties on Ceramic/glass Composites of SiO2-B2O3-R(CaO, BaO, ZnO, Bi2O3 Borosilicate Glass System for Low Temperature Ceramics (저온 소결 세라믹스용 SiO2-B2O3-R(CaO, BaO, ZnO, Bi2O3 붕규산염계 세라믹/유리 복합체의 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Shim, Sang-Heung;Park, Jong-Guk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.19-24
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    • 2007
  • The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

Impact of coffee ring effect on the $Al_2O_3$ thick films by Using Inkjet Printing Process

  • Hwang, Myung-Sung;Jang, Hun-Woo;Kim, Ji-Hoon;Koo, Eun-Hae;Kim, Hyo-Tae;Yoon, Young-Joon;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.171-171
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    • 2009
  • We have investigated the impact of coffee ring effect on the inkjet-printed $Al_2O_3$ thick films. In a single solvent system such as Dimethylformamide, the coffee-ring-pattern has appeared on the edge of sessile drop after evaporation. The peak-to-valley height difference in $Al_2O_3$ coffee ring is over 2um. This non-uniform deposition of $Al_2O_3$ over the surface leads to sever surface roughness of the inkjet-printed films. However, we have manipulated our printing parameters to improve the surface roughness and the packing density of the printed $Al_2O_3$ films. Our inkjet-printed $Al_2O_3$ films show 10 times smoother surface than the initially printed sample's surface. Also the packing density of the printed Ah03 film becomes 70% of high packed $Al_2O_3$. In this presentation, we would like to present the key process parameters of the inkjet printing process to overcome the genetic coffee ring problem.

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Growth and Characterization of LaAlO$_3$ Single Crystals by the Traveling Solvent Floating Zone Method (Travelin Solvent Floating Zone법에 의한 LaAlO$_3$ 단결정의 성장 및 특성)

  • 정일형;임창성;오근호
    • Journal of the Korean Ceramic Society
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    • v.35 no.3
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    • pp.280-286
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    • 1998
  • LaAlO3 Single crystals used as a substrate for thin film depositions of a high temperature oxide su-perconductor YB2Cu3O7 and applied to microwave frequencies were grown by the Traveling Solvent Flati-ing Zone (TSFZ) method and characterized. For the growth of LaAlO3 single crystals polycrystalline fe-edrods were prepared from powder mixture of La2O3 and Al2O3 with a mole ratio of 1:1 calcined at 110$0^{\circ}C$ for 3h and sintered at 140$0^{\circ}C$ for 4h The growth LaAlO3 crystals was 4-5mm in diameter 30mm in length and dark brown. The growth rate was 2-3mm/h and the rotation speeds were 10rpm for an upper ro-tation and 40 rpm for a lower rotation The growing crystals and the feedrods were counter-rotated. The orientation of the grown single crystals of LaAlO3 was identified to be [111] direction. Dielectric constants were measured to be 30-33 between 100 kHz and 1 MHz in the 30$0^{\circ}C$ to 45$0^{\circ}C$ temperature range and 102 in a range of 100 kHz at the phase transformation temperature of 522$^{\circ}C$ Dielectric losses were calculated to be 1.8$\times$10-4 at the room temperature and 5.7$\times$10-3 at the phase transformation temperature. Lattice con-stants of the grown crystlals were determined to be aR=5.3806 $\AA$ and $\alpha$=60.043$^{\circ}$ by the least square method.

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The Effect of Sintering Atmosphere on the Microwave Dielectric Properties of $(1-x)CaTiO_3-xLaAlO_3$ System (소결 분위기가 $(1-x)CaTiO_3-xLaAlO_3$계의 마이크로파 유전특성에 미치는 영향)

  • 여동훈;김현재;문종하
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.505-511
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    • 1997
  • The effects of sintering atmospheres(air, O2, N2) on the sintering and microwave dielectric properties of (1-x)CaTiO3-xLaAlO3 system was investigated. The sintered density of (1-x)CaTiO3-xLaAlO3 under air atmosphere increased linearly with increasing x, but it decreased in the range of x>0.5 under O2 atmosphere and x>0.6 under N2 atmosphere in spite of the increament of the smaller La(1.06$\AA$) and Al(0.5 $\AA$) ion than Ca(0.99$\AA$) and Ti(0.6$\AA$). In case of the air sintering atmosphere of (1-x)CaTiO3-xLaAlO3 the two phases of orthorhombic and rhombohedral crystal system were coexisting, and the XRD peak of rhombohedral crystalsystem was to be higher with increasing x. However, the sintering atmosphere of O2 and N2 made the monophasic crystal system of orthorhombic keep up by x=0.5 and x=0.6, respectively, and it transformed to pseudo-cubic crystal system in x>0.5 and x>0.6. The XRD peak intensity of (1-x)CaTiO3-xLaAlO3 was to be gradually higher with increasing x under the air atmosphere of sintering. Whereas, its XRD peak intensity increased till x=0.6 but decreased with increasing x in the range of x>0.6 under O2 and N2 atmosphere. The relative dielectric constant of (1-x)CaTiO3-xLaAlO3 sintered under air atmosphere decreased linearly and the Q.f0 value increased according as x increased. On the other hand, the relative dielectric constant of (1-x)CaTiO3-xLaAlO3 under O2 and N2 atmosphere decreased in the range of x$\leq$0.5 with increasing x, but increased rapidly in the range of x$\geq$0.6. And the Q.f0 value increased till x=0.6 but decreased in the range of x>0.6 with increasing x. The temperature coefficient of resonant frequency had no relation to sintering atmosphere.

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A Study on the Forming of Solid Solution in CaO.MgO.$2SiO_2-Al_2O_3$ System (CaO MgO.$2SiO_2-Al_2O_3$ 계의 고용체 생성에 관한 연구)

  • 안영필;김복희
    • Journal of the Korean Ceramic Society
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    • v.20 no.1
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    • pp.25-30
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    • 1983
  • This experiment was studied in the system of (1-x) CaO MgO $2SiO-Al_2O_3$ to investigate forming of solid solution. The technique empolyed was the well known water-quenching method. Differential thermal analysis of the each glass water quenched indicated that under 30 mole% $Al_2O_3$ was lowered with increasing of the amount of $Al_2O_3$ It was supposed by X-ray diffraction patterns of each specimen sintered at various temperature that only solid solution was formed under the 30mole % $Al_2O_3$ compositions solid solution and anorthite were formed at the 20mole% $Al_2O_3$ composition anorthite solid solution and spinel$(MgAl_2O_4)$ were formed over the 40mole% $Al_2O_3$ compositions. The maximum density and thermal expanison coefficient was 2.89g/cm 7.74x106./C$^{\circ}$ respectively in the composi-tion of 10 mole% $Al_2O_3$ . All the specimens showed linear thermal expansion behavior. Microhardness was as high as 850kg/nm2 in the composition of 5, 10, 20 mole % $Al_2O_3$ and dielectric constant was 7.3-6.9.

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Study for Fabrication of Dielectric Thick Films with Low Dielectric Constant and Low Loss Tangent Grown by Aerosol Deposition Method at Room Temperature (에어로졸 데포지션법에 의한 저유전율, 저손실 유전체 후막의 상온 증착 공정에 대한 연구)

  • Park, J.C.;Yoon, Y.J.;Kim, H.T.;Koo, E.H.;Nam, S.M.;Kim, J.H.;Shim, K.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.210-210
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    • 2008
  • 에어로졸 증착법은 상온에서 다양한 기판 상에 고밀도의 세라믹 후막을 코팅할 수 있는 최신 기술로써 다양한 방면으로의 응용이 개대되고 있다. 본 실험에서는 ADM을 이용하여 고주파수 영역에서 사용가능한 기판소재 제조에 관한 연구를 진행하였다. ADM을 통해 형성된 $Al_2O_3$ 막의 유전율은 9-10으로 bulk 시료와 비슷한 특성을 보였으나 후막의 손실률의 경우는 bulk 시료에 비해 상당히 컸으며 주파수 증가에 따라 그 값이 크게 감소하는 경향을 보였다. 본 실험에서는 ADM으로 형성된 $Al_2O_3$의 높은 손실률의 원인에 대해 고찰하고 ADM 을 통해 기판소재로 사용가능한 저손실의 $Al_2O_3$막의 제조를 위한 방법을 제시하고자 하였다.

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Low k Materials for High Frequency High Integration Modules (고주파대응 고집적 모듈용 저유전율 소재)

  • Na, Yoon-Soo;Hwang, Jong-Hee;Lim, Tae-Young;Shin, Hyo-Soon;Kim, Jong-Hee;Cho, Yong-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.328-328
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    • 2008
  • As a low K material for high frequency high integration modules, glass/ceramic composites were investigated. Glass composition were selected from $SiO_2-B_2O_3-Al_2O_3-R_2O$-RO system which having very low dielectric constant and cordierite was used as a ceramic filler. These composites were sintered at temperature range from $850^{\circ}$ to $950^{\circ}$ and XRD, SEM microstructure analysis of sintered bodies were performed for understanding sintering behavior. Any crystallization was not occurred and dense sintered bodies were attained. Dielectric and mechanical properties of these sintered glass/cordierite composites were analysed by network analyzer and UTM. Glass/ceramic composite with 50 wt% cordierite showing a dielectric constant (${\varepsilon}_r$) of 5.4, Q${\times}f_0$ (Q) of 1600 at 1 GHz and maximum bending strength of 163 MPa was attained.

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Dielectric Properties of Al2O3 Thick Films Grown by Aerosol Deposition Method (에어로졸 데포지션법으로 성막된 Al2O3 후막의 유전특성)

  • Park, Jae-Chang;Yoon, Young-Joon;Kim, Hyo-Tae;Koo, Eun-Hae;Nam, Song-Min;Kim, Jong-Hee;Shim, Kwang-Bo
    • Journal of the Korean Ceramic Society
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    • v.45 no.7
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    • pp.411-417
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    • 2008
  • Aerosol Deposition Method (ADM) is a novel technique to grow ceramic thick films with high density and nano-crystal structure at room temperature. $^{1,2)}$ For these unique advantages of ADM, it would be applied to the fabrication process of 3-D integration ceramic modules effectively. However, it is critical to control the properties of starting powders, because a film formation through ADM is achieved by impaction and consolidation of starting powders on the substrates. We fabricated alumina thick films by ADM for the application to integral substrates for RF modules. When the as-received alumina powders were used as a starting material without any treatments, it was observed that the dielectric properties of as-deposited alumina films, such as relative permittivity and loss tangent, showed high dependency on the frequency. In this study, some techniques of powder pre-treatments to improve the dielectric properties of alumina thick films will be shown and the effects of starting powders on the properties of AD films will be discussed.

Sintering Behavior and Dielectric Properties of $Al_2O_3$/Glass/$Al_2O_3$ Ceramics by Glass Infiltration (Glass Infiltration법에 의한 $Al_2O_3$/Glass/$Al_2O_3$ 세라믹스의 소결거동 및 유전특성)

  • Jo, Tae-Jin;Yeo, Dong-Hun;Sin, Hyo-Soon;Hong, Yeon-Woo;Kim, Jong-Hee;Cho, Yong-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.177-177
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    • 2009
  • 이동통신 시스템의 소형화 경량화 다기능화 추세에 따라 세라믹 모듈의 정밀도 및 집적도가 중요한 요소로 부각되고 있다. 이러한 모듈의 고집적화 추세에 대응하기 위하여 세라믹 소성시 수축율 제어가 필수적인 요소로 부각되고 있으며, 이에 따라 X, Y축의 소성 수축율을 0에 근접하게 제어하는 무수축 소성 기술이 요구되고 있다. 선행연구를 통하여 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 무수축 소성 기술 구현 가능성을 확인하였으나, 아직 해결해야 할 문제점들이 있다. glass가 $Al_2O_3$층으로 infiltration되는 과정에서 glass층이 de-lamination 되는 결함이 발견되었으며 이는 유전체 기판의 Q값을 낮추고 기판의 신뢰성에 악영향을 줄 수 있어 이에 대한 개선이 필요한 실정이다. 본 연구에서는 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 선행 실험에서 관찰된 기판 내부의 de-lamination 현상에 대한 원인을 규명하고 해결책을 제시하고자 하였다. glass 유동과 바인더 burn-out이 동시에 진행됨에 따라 기공이 생성되며 glass가 점성유동함에 따라 이 기공이 glass층으로 모이게 되어 de-lamination 현상이 발생하는 것으로 사료된다. 이를 해결하기 위하여 de-lamination층에 $Al_2O_3$의 tamping을 시도하여 glass층의 기공이 빠져 나갈 수 있는 channel 을 형성하고, 남아있는 기공을 $Al_2O_3$로 채우는 효과를 얻을 수 있었다. 이에 따라 기판의 밀도와 Quality factor 값이 향상되었으며 미세구조가 치밀한 무수축 기판을 제작할 수 있었다.

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Crystalline Phases and Dielectric Properties of Crystallized Glasses in the System (Ca, Sr, Ba) O-Al2O3-B2O3-SiO2-TiO2

  • Tuzuku, Koichiro;Kishi, Hiroshi;Taruta, Seiichi;Takusagawa, Nobuo
    • The Korean Journal of Ceramics
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    • v.5 no.2
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    • pp.189-194
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    • 1999
  • Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

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