• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.433-438
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• 1987

The current-voltage characteristics of the ZnO varisor with and without Sb2O3 which were fabricated with the various calcination and sintering temperature were discussed by comparing the results of SEM-microstructures and X-ray diffraction analysis. The samples were calcined at the temperature up to 800\ulcorner for 2 hours and they were sintered at 1200-1300\ulcorner for 1 hour. Then, we applied the power up to dc 200 volt to the samples and measured the output current up to 100mA. The samples without Sb2O3 had lower nonlinear resistances at the all calcination and sintering temperatures due to the large grains because of not forming Spinel phase. The other samples contained Sb2O3 could form Pyrochlore and Spinel phases at the all calcination temperatures by X-ray diffraction phase analysis. We found that the Spinel phases which were formed at the calcination process inhibit growth of ZnO grain and give rise to the change of nonlinear resistances by SEM-microstructures. And we found that the base of ZnO grain growth control is strongly dependent on the behavior of Sb2O3 in calcination process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.243-243
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• 2007

We have studied the electrical properties and microstructure of $(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y[(YNS)-123]$ Oxides by rod-type seeded melt growth process(RSMG) in air atmosphere. Rod-type $NdBa_2Cu_3O_y${Nd-123) seed crystals made a extrusion process method, were used for achieving the ab-plane alignment having large grains perpendicular to the center of (YNS)-123 samples. The observations using SEM and TEM micrographs of the melt-textured (YNS)-123 samples revealed that the nonsuperconducting $(Y_{0.5}Nd_{0.25}Sm_{0.25})Ba_2Cu_3O_y[(YNS)-211]$ inclusions are uniformly distributed in the superconducting matrix. The microstructure and electrical properties were investigated by XRD, SEM, TEM and DC SQUID magnetometer. The sample showed a sharp superconducting transition at 90 K. The magnetization values of the (YNS)-123 sample exhibited the enhanced electrical properties, compared with $YBa_2Cu_3O_y$(Y-123) sample.

• Resources Recycling
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• v.10 no.3
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• pp.37-42
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• 2001

Current iron and steelmaking operation was re-evaluated on the basis of slag engineering technology to optimize slag operations. In blast furnace process, increase in the basicity of slags (C/S) could obtain progressed fluidity and hot metal quality. COREX process would be stabilized in view of slag fluidity and hot metal quality by reducing input content of $SiO_2$and $A1_2$$O_3$In STS-AOD process, addition of small amount of lime could improve refining capacity of the slag; also calcium aluminate flux could be taken into account as a potential substitute for fluorspar, without degradation of operation efficiency and steel quality.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.7-10
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• 2005

[ $TiO_{2}-ZrO_{2}$ ] powders were successfully synthesized by the sol-gel process using titanium iso-propoxide as a precursor. The amorphous $TiO_{2}$ particles, 70 nm in size, homogenously adhered to the surface of $ZrO_{2}$ the powders. After calcination at $450^{circ}C$, most of the $TiO_{2}$ powders appeared as an anatase type, whereas they changed to a rutile phase at $750^{circ}C$. For comparison of photocata­lytic activity, $TiO_{2}-ZrO_{2}$ nano-sized powders calcined at $450^{circ}C,\;600^{circ}C,\;and\;750^{circ}C$ were used. In the $TiO_{2}-20wt\%$ $ZrO_{2}$ powders cal­cined at $450^{circ}C$, there was excellent removal efficiency of Methyl Orange (MO). For the calcination temperature increased, $TiO_{2}­ZrO_{2}$ nano-sized powders increased $ZrO_{2}$ contents showed the good photoactivity for the photooxidation of MO.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.357-362
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• 2014

Thermal barrier coatings(TBCs) are being applied in many industrial fields such as thermal power generation, aviation and seasonal fields. $ZrO_2-Y_2O_3$(8%) thermal spray coating powders are commercially used as thermal-barrier coating materials to protect against oxidation and corrosion of heat-resistant alloys at elevated temperatures. Currently, $ZrO_2-Y_2O_3$(8%) thermal-spray powder is made using the industrial co-precipitation process, which is very complex and requires a lot of time. In this study, orthorhombic $ZrO_2$ and $Y_2O_3$ powders were fabricated by mechanical mixing, which is more economical than the co-precipitation process. A tetragonal, yttria-stabilized zirconia(YSZ) coating-layer was produced by plasma spraying, using orthorhombic $ZrO_2-Y_2O_3$(8%) powder. Our experimental results indicate that $ZrO_2-Y_2O_3$(8%) mixed powder can be used economically in industry because it is no longer necessary to make this powder by liquid and gas-phase methods.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.1
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• pp.34-41
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• 2002

CdS and $TiO_2$ nanoparticles were made by the precipitation method and sol-gel method, respectively, and they were mixed mechanically and then treated with the hydrothermal processing. CdS-$TiO_2$ composite particulate films were thus prepared by casting CdS-$TiO_2$ mixed sol onto $SnO_2$ conducting glass and a subsequent heat-treatment at $400^{\circ}C$. Again, the physico-chemical and photoelectrochemical properties of these films were controlled by the surface treatment with $TiCl_4$ aqueous solution. The photocurrents and the hydrogen production rates measured under the present experimental conditions varied in the range of $3.5{\sim}4.5mA/cm^2$ and $0.3{\sim}1.8cc/cm^2$-hr, respectively, and showed the maximum values at the $CdS/[CdS+TiO_2]$ mole ratio of 0.2. Also, the surface treatment with $TiCl_4$ aqueous solution caused a considerable improvement in the photocatalytic activity, Probably as a result of close contacts between the primary particles by the etching effect of $TiCl_4$ It was found that the photoelectrochemical performance of these particulate films could be effectively enhanced by this approach.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.112-114
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• 2005

Dispersion stability of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles, which was produced by hydrothermal process, was studied in aqueous suspension using ESA (Eletrokinetic Sonic Amplitude). The average particle size of the synthesized $Sm_xCe_{1-x}O_{2-2/x}$ at nanoparticles was about $5{\pm}2nm$. The dispersion and rheological behavior of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles aqueous suspension was investigated using $NH_4OH\;and\;HNO_3$ as a disperse agent. The colloidal stability of aqueous suspensions with $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles at different pH values has been investigated by means of zeta potential, average particle size, and the distribution of synthesized $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles. The isoelectric point of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles was at pH around 11 and the value of zeta potential was at its maximum near pH 6.5.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.3-12
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• 1983

In the present study an attempt was made to synthesize the $Al_2O_3$.$2SiO_2$ glass in which atomic ratio is Al:Si=1:1 by sol-gel process. And at such a low temperature as 55$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Al bonding was obtained. $Si(OC_2H_5)_4$ and $Al(NO_3)_3$.$9H_2O$ were used as the precursor and among the mutual solvents only n-butanol gave good results for the synthesis of the gel derived glass. Partial hydrolysis of TEOS with one-fold mol of $H_2O$ prior to the reaction with aluminum nitrate gave the better results., Total oxide content to the total reactants by weight was affective to the results.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.