• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.392-393
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• 2007

PDP용 녹색 $Zn_2SiO_4$:Mn 형광체의 발광특성과 결정성을 향상시키기 위해 co-dopant로 Mg를 첨가한 $(Zn_{1-x}Mg_x)_2SiO_4$:Mn 형광체를 합성하였다. 합성된 형광체의 발광특성을 PL로 조사한 결과, $Zn_2SiO_4$:Mn 형광체는 Mg의 농도에 관계없이 530nm에서 녹색 발광을 하였고, Mg의 농도가 0.5 mol%일 때 가장 높은 발광세기가 나타났다. 이것은 Zn과 이온반경이 비슷한 Mg가 치환되어 모체에서의 Mn으로의 에너지 전이가 증가하여 발광세기가 증가한 것으로 생각된다.

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.87-93
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• 1986

Yttria-bismuth-stabilized zirconia was investigated with respect to the amount of $Bi_2O_3$ addition in the ran-ge of 0.5~5mol% to the base composition of $(ZrO_2)_{0.92}(Y_2O_3)_{0.08}.Bismuth was introduced into the ma-terial with $Bi_2O_3-SiO_2$ glasses in order to reduce the evaporation of components. The sinterbility evaporation of components phase formation and microstructure were evaluated depending on the amount of $Bi_2O_3-SiO_2$ glass addition. Two probe A. C conductivity measurement was subjected to all the specimens and the result was discussed on the possible substitution of $Bi^{3+}$ for $Zr^{4+}$ and interistial $Si^{4+}$ in the fluorite structure of zirconia crystal there-upon the possible change in the capability of oxygen transference within the material. It was found that the addition of $Bi_2O_3$ could improve the sinterbility of material very much while not so much.oxygen sensing material suitable for relative low temperature firing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.237-238
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• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.266-275
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• 1993

We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS (tetraethylorthosilicate) and TMPite (trimethylphosphite) and studied the deposition characteristics. The activation energy of the reaction was changed from 54.6 kcal/mole to 39.2 kcal/mole by incorporating the TMPite into the reaction of TEOS. The deposition rate and the P concentration of films increased in proportion to the flow of TMPite. As the deposition temperature increased, the deposition rate of the films increased but the P concentration decreased. The fabricated films showed the increase of refractive index of 0.0019 per 1 wt% of P concentration. The nonuniformity of films was ${\pm}$7% in thickness and ${\pm}$0.5wt% in P concentration and we showed this'nonuniformity is due to the nonuniform transport of TMPite. The films of more than 10wt% P concentration developed phosphoric acid on its surface when exposed to air for long time.

• Journal of Powder Materials
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• v.14 no.6
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• pp.354-361
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• 2007

The bi-materials with Al-Mg alloy and its composites reinforced with SiC and $Al_2O_3$ particles were prepared by conventional powder metallurgy method. The A1-5 wt%Mg and composite mixtures were compacted under $150{\sim}450\;MPa$, and then the mixtures compacted under 400 MPa were sintered at $773{\sim}1173K$ for 5h. The obtained bi-materials with Al-Mg/SiCp composite showed the higher relative density than those with $Al-Mg/Al_2O_3$ composite after compaction and sintering. Based on the results, the bi-materials compacted under 400 MPa and sintered at 873K for 5h were used for mechanical tests. In the composite side of bi-materials, the SiC particles were densely distributed compared to the $Al_2O_3$ particles. The bi-materials with Al-Mg/SiC composite showed the higher micro-hardness than those with $Al-Mg/Al_2O_3$ composite. The mechanical properties were evaluated by the compressive test. The bi-materials revealed almost the same value of 0.2% proof stress with Al-Mg alloy. Their compressive strength was lower than that of Al-Mg alloy. Moreover, impact absorbed energy of bi-materials was smaller than that of composite. However, the bi-materials with Al-Mg/SiCp composite particularly showed almost similar impact absorbed energy to $Al-Mg/Al_2O_3$ composite. From the observation of microstructure, it was deduced that the bi-materials was preferentially fractured through micro-interface between matrix and composite in the vicinity of macro-interface.

• Korean Journal of Soil Science and Fertilizer
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• v.32 no.1
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• pp.39-46
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• 1999

This study was performed to examine the effect of initial composition ratio and various reaction conditions on CEC and crystallinity of the product in hydrothermal synthesis of zeolitic materials from fly ash. Na-P1 zeolite was formed from the mixture with $SiO_2/Al_2O_3$ ratio above 2.55, however from the mixture with $SiO_2/Al_2O_3$ ratio below 2.25 hydroxy sodalite was formed. The CEC of reaction product(Na-P1 zeolite) treated with 3N-NaOH, $Na_2O/Al_2O_3$ ratio 2.55 and $SiO_2/Al_2O_3$ ratio 2.0 for 12 hours at $103^{\circ}C$ was about $285cmol^+kg^{-1}$, which was higher than those of the products of other reaction condition. The crystallinity of Na-P1 zeolite as high as 45.1% was attained at the optimum reaction condition of 2N-NaOH, $SiO_2/Al_2O_3$ ratio 2.55, $Na_2O/Al_2O_3$ ratio 1.5 for 12 hours at $103^{\circ}C$. The XRD peak of the reaction product could be measured at 7.16, 5.04, 4.12, 3.18, $2.69{\AA}$ and tetragonal pillar shape observed by SEM image be characteristic for Na-P1 zeolite. Judging from the result, it should be considered the optimum synthesis condition for Na-P1 zeolite from fly ash was 2~3N NaOH, $SiO_2/Al_2O_3$ ratio 2.55 and $Na_2O/Al_2O_3$ ratio 1.5~2.0 for 12 hours at $80{\sim}103^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.544-549
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-39vo1.%TiB$_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2O_3+Y_2O_3$ and the sintering temperature. The result of phase analysis for the SiC-39vo1.%TiB$_2$ composites by XRD revealed $\alpha -SiC(6H),\; TiB_2,\; and YAG(Al_5Y_3O_{12})$ crystal phase. The relative density of SiC-39vo1.% $TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.8 MPa.m_{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$additives at $1750^{\circk}C$. The electrical resistivity of the SiC-39vo1.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25S^{\circ}C \;to\; 700^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.447-447
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• 2012

최근 생물전자공학에서 의료 산업 환경 등 많은 분야에 응용 가능한 바이오센서의 연구가 활발해지고 있다. 그 중 의료 분야에서, 수소이온 ($H^+$)의 농도 감지는 인간의 질병을 예측하는데 중요한 지표가 되며 이러한 수소이온 ($H^+$) 농도의 변화를 실시간으로 감지하기 위해 반도체를 기반으로 한 다양한 pH 센서가 제안되었다. Ion sensitive field effect transistor (ISFET), electrolyte-insulator-semiconductor (EIS)는 대표적인 반도체 pH센서로, 작은 소자 크기, 견고한 구조, 빠른 응답속도와 CMOS 공정과의 호환성이 좋다는 장점이 있다. 특히, EIS는 제조공정이 간단하고 감지막의 감지 특성 평가가 용이하기 때문에 지속적으로 연구되고 있는 pH 센서이다. 센서의 감지 특성을 평가함에 있어 감지막의 감지감도와 안정성이 우수해야 하며 이를 위해 high-k 물질이 감지막으로 사용되고 있다. 추가적으로 high-k 물질은 기존의 $SiO_2$와 $Si_3N_4$를 대신하여 높은 유전상수로 인한 고성능, 고감도 센서제작을 가능케 한다. 본 연구에서는, high-k 물질인 $HfO_2$, $Ta_2O_5$, $ZrO_2$, $Al_2O_3$를 각각 $SiO_2$ 완충막에 적층한 이단 감지막을 제작하였고, 그 특성을 기존의 $SiO_2$, $Si_3N_4$ 감지막의 감지특성과 비교하였다. pH 감지 특성을 평가해 본 결과, 기존의 $SiO_2$, $Si_3N_4$ 감지막과 비교했을 때 high-k 물질의 감지막을 갖는 EIS pH 센서에서 감지감도와 안정성 모두 우수하게 나타났다. 특히, high-k 물질 중 $HfO_2$에서 감지감도가 다소 크게 평가되었으나, 화학적 용액에 대한 안정성은 떨어졌다. 반면에 $Al_2O_3$과 $Ta_2O_5$은 화학용액에 대한 안정성 측면에서 최적의 특성을 보임을 확인하였다. 결론적으로, high-k 물질에 대한 전반적인 평가를 통하여 높은 pH 감지감도뿐만 아니라 우수한 안정성의 EIS pH 센서를 제작 할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.347-360
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• 1989

Spinel, mullite, forsterite and cordierite composition powders were synthesized from Mg(NO3)2.6H2O, Al(NO3)3.9H2O and SiCl4-ethanol solution by spray pyrolysis method and the sinterability of these powders were investigated. The bulk density of spinel and mullite specimens sintered at 1,$700^{\circ}C$ for 1hr was 3.56g/㎤(99.5% relative density) and 3.16g/㎤(99.7% relative density), respectively. (Green compacts were made from powders prepared at 1,00$0^{\circ}C$). The bulk density of forsterite and cordierite specimens sintered at 1,480 and 1,40$0^{\circ}C$ for 2hrs were 3.217 and 2.155g/㎤, respectively. (Green compacts were made from powders prepared at 1,00$0^{\circ}C$). The constituent compositions of spinel and mullite specimens sintered at 1,$700^{\circ}C$ for 1hr were 27.5wt% MgO and 70.5wt% Al2O3, respectively. Vickers microhardness and fracture toughness of spinel sintered at the above condition were 13.7GPa and 2.6MN.m3/2, respectively, and room temperature bending strength, 425MPa, was nearly maintained even at the elevated temperature. In the case ofmullite specimens, those values were 13.5GPa, 2.2MN/m3/2 and 430MPa, respectively.