• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.170-170
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• 2013

형광체를 조명과 디스플레이 산업에 응용하기 위해서는 충분히 밝은 빛을 제공하는 형광체의 발광 세기가 중요한 변수이다. 이러한 발광 특성은 주로 모체 격자에 도핑 되는 활성제의 농도, 입자의 형상과 크기 분포의 균일성, 결정성에 따라 달라진다. 본 연구에서는 Ca2SiO4 모체 결정에 도핑한 활성제 Eu3+와 Dy3+ 이온의 농도를 변화시키면서 고상 반응법을 사용하여 높은 발광 효율을 갖는 Ca2-1.5xSiO4::Eux3+ 적색 형광체와 Ca2-1.5xSiO4:Dyx3+ 백색 형광체를 합성하였다. 특히, 활성제 Eu3+와 Dy3+ 이온 농도의 변화가 형광체의 결정 구조, 소성 온도, 입자의 표면 형상, 광학 스펙트럼의 발광 효율에 미치는 영향을 조사하여 최적의 합성 조건을 결정하였으며, 회절 신호의 반치폭과 발광 세기의 상호 관계를 조사하였다. Ca2-1.5xSiO4::Eux3+와 Ca2-1.5xSiO4:Dyx3+ 형광체 초기 분말 시료는 CaO (99.9% 순도), SiO2 (99.9%), Dy2O3 (99.9%)와 Eu2O3 (99.9%)인 화학 물질을 구입하여 초정밀 저울로 화학양론적으로 측정하였다. 이때 Eu와 Dy의 함량비는 x=0, 0.01, 0.05, 0.1, 0.15, 0.2 mol로 변화 시키면서 합성하였다. Ca2-1.5xSiO4: Dyx3+ 형광체 분말 시료의 경우에 소결 온도를 각각 $1000^{\circ}C$와 $1100^{\circ}C$로 달리하여 흡광과 발광 스펙트럼의 세기를 비교해 본 결과, 서로 다른 두 소결 온도에서 합성한 두 형광체 분말은 동일하게 Dy3+의 몰 비가 0.05 mol일 때 주 발광 스펙트럼의 세기는 최대값을 나타내었다. 파장 355 nm로 여기시킨 Dy3+ 함량비에 따른 Ca2-1.5xSiO4:Dyx3+ 형광체 분말의 발광 스펙트럼은 Dy3+ 함량비에 관계 없이 581 nm에서 가장 강한 황색 발광을 보였다. 함량비가 증가함에 따라 발광 스펙트럼의 변화가 관측되었는데, Dy3+의 몰 비가 0.01 mol~0.05 mol인 영역에서는 발광 세기가 증가하여 0.05 mol에서 최대를 나타내다가 Dy3+의 몰 비가 더욱 증가함에 따라 발광세기는 현저히 감소하는 경향을 나타내었는데, 이 현상은 농도 소광 현상으로 해석 할 수 있다. 이외에도, Eu3+와 Dy3+ 이온의 함량비와 소결 온도가 결정 입자의 크기와 흡광 스펙트럼에 미치는 결과를 조사하였다.

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.59-66
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• 2020

Effects of Na₂SiO₃ concentration added into 0.1 M NaOH + 0.05 M NaF solution on the formation behavior and properties of PEO films on AZ91 Mg alloy were investigated under 1200 Hz of alternating current (AC) by voltage-time curves, in-situ observation of arc generation behavior and measurements of film thickness, surface roughness and micro vickers hardness. In the absence of Na₂SiO₃ in the 0.1 M NaOH + 0.05 M NaF solution, about 4 ㎛ thick PEO film was formed within 1 min and then PEO film did not grow but white spots were formed by local burning. Addition of Na₂SiO₃ up to 0.2 M caused more increased formation voltage and growth of PEO film with uniform generation of arcs. Addition of Na₂SiO₃ from 0.2 M to 0.4 M showed nearly the same voltage-time behavior and uniform arc generation. Addition of Na₂SiO₃ more than 0.5 M resulted in a decrease of formation voltage and non-uniform arc generation due to local burning. PEO film growth rate increased with increasing added Na₂SiO₃ concentration but maximum PEO film thickness was limited by local burning if added Na₂SiO₃ concentration is higher than 0.5 M. Surface roughness of PEO film increased with increasing added Na₂SiO₃ concentration and appeared to be proportional to the PEO film thickness. PEO film hardness increased with increasing added Na₂SiO₃ concentration and reached a steady-state value of about 930 H_V at more than 0.5 M of added Na₂SiO₃ concentration.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.94-103
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• 2001

SiO$_2$ and PDMS/SiO$_2$ xerogels which are derived PDMS into TEOS have been synthesized by sol-gel process and controlled pore size and distribution through 2 step acid/base catalyzed processes using HCI and NH$_4$OH as a catalyst. In HCl catalyzed SiO$_2$ and PDMS/SiO$_2$ xerogels, pH and gellation time of xerogel were 2.3~2.5 and 12~13 days, respectively, and the shape of xerogel was identified to pellet type and column type. Under acidic condition of final reaction solution, the hydrolysis rate is accelerating, resulting in long gel times. The shape of xerogel is pellet type. In contrast, under less acidic condition, the condensation rate is accelerating, resulting in shorter gel times and the shape of xerogel is column type. The surface area and average Pore size were changed 400$\rightarrow$600($\m^2$/g) and 15$\rightarrow$28$\AA$, respectively, depending to the increase of the mole ratio of HCl/NH$_4$OH, and represented uniform pore size distribution. It is that all the alkoxide groups are hydrolyzed by HCl after the first step and the condensation rate is enhanced by NH$_4$OH. The regular backbone structures of silica are formed at low temperature and the uniform pores are produced by heat treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.442-443
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium zinc oxide (IZO) films grown on $SiO_2$/PES/$SiO_2$ substrate by a RF sputtering in pure Ar ambient at room temperature were investigated. A sheet resistance of $13.5\;{\Omega}{\square}$, average transmittance above 85 % in 550 nm, and root mean square roughness of $10.5\;{\AA}$ were obtained even in the IZO layers grown at room temperature in pure Ar ambient. Without addition of oxygen gas during IZO sputtering process, we can obtain high quality IZO anode films from the specially synthesized oxygen rich IZO target. XRD result shows that the IZO films grown at room temperature is completely amorphous structure due to low substrate temperature. In addition, the electrical and optical properties of the flexible OLED fabricated on IZO/$SiO_2$/PES/$SiO_2$ is critically influenced by the electrical properties of a IZO anode. This findings indicate that the IZO/$SiO_2$/PES/$SiO_2$ is a promising anode/substrate scheme for realizing organic based flexible displays.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2003.11a
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• pp.131-135
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 1996.05a
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• pp.82-83
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• 1996

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.231-234
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• 2002

Magnetic properties are investigated for top- and bottom-type spin valves of Si/SiO$_2$/NiO(60nm)/Co(2.5nm)/Cu(1.95nm)/Co(4.5nm)/NOL(t nm; Nano Oxide layer). The MR ratios of the bottom-type spin valves with NOL are larger than those of the top-type spin valves. However, the enhancement of the former is lower than the latter. Both of spin-valves also showed almost constant Ap and smaller p. Enhanced MR ratios of spin valves with NOL result mainly from small values of with constant Ap which due to specular diffusive electron scattering at NOL(NiO)/metal interfaces.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.258-265
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• 1992

A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.105-110
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• 2012

In this paper, a yellow phosphor $Sr_3SiO_5:Eu^{2+}$ that emits efficiently at the 450 nm excitation for warm white LED is studied. In addition, the effects of various flux $BaF_2$, $NH_4Cl$ on the emission spectra were investigated. The samples were synthesized through conventional solid state reaction under reducing atmosphere of 95% $N_2$-5% $H_2$ mixture at the high temperature. All phosphors showed a excitation band from 450 nm and broad band emission peaking at region of 580 nm. The optimal concentration of $BaF_2$ flux is 3 wt% for $Sr_3SiO_5$ with doping 0.05mol Eu phosphors fired in a reductive atmosphere. The phosphor showed highest emission peaking at 582 nm.