• 한국세라믹학회지
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• 제29권1호
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• pp.29-34
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• 1992

Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 합동춘계학술대회 논문집 전기물성,응용부문
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• pp.175-176
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• 2008

In this study, the sintering properties and structural properties of the $Mg_5Ta_4O_{15}$cation-deficient perovskite ceramics with $Li_2CO_3$ additions are investigated. The cation-deficient perovskite ceramics are prepared through the solid-state route. According to the XRD pattern, $Mg_4Ta_2O_9$, $MgTa_2O_6$ and $Mg_5Ta_4O_{15}$ phase existed in sintered pure $Mg_5Ta_4O_{15}$ ceramics. With $Li_2CO_3$, additions, the peak intensities of $Mg_4Ta_2O_9$ and $MgTa_2O_6$ phase were reduced. Also, diffraction intensity of the $Mg_5Ta_4O_{15}$ phase was increased with increments of $Li_2CO_3$ additions. The bulk densities were increased with increasing of $Li_2CO_3$ amount and approach the theoretical density of the $Mg_5Ta_4O_{15}$ ceramics, more and more. Microstructure of the $Mg_5Ta_4O_{15}$ ceramics were densified more and more by additions of $Li_2CO_3$. The bulk density of $Mg_5Ta_4O_{15}$+5wt% $Li_2CO_3$ ceramics sintered at $1500^{\circ}C$ for 10 hours was $5.88g/cm^3$.

• 한국세라믹학회지
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• 제39권9호
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• pp.863-870
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• 2002

$Pb(Fe_{1/2}Ta_{1/2})O_3$의 $Ta^{5+}$을 $Ta^{5+}$과 이온반경이 같고 원자량이 약 1/2배인 $Nb^{5+}$으로 치환한 $Pb{{Fe_{1/2}(Ta_(1-x)Nb_x)_{1/2}}O_3$ (x=0.0∼1.0) 고용체를 단일상으로 합성하여 그 유전특성 및 B자리 양이온 질서배열구조를 조사하였다. $Pb(Fe_{1/2}Ta_{1/2})O_3$는 유전완화현상 및 완만한 상전이가 뚜렷하게 관찰되는 전형적인 완화형 강유전특성을 보였지만, $Ta^{5+}$이 $Nb^{5+}$으로 치환됨에 따라 유전완화현상은 감소하고 상전이는 급격해져 결국 $Pb(Fe_{1/2}Nb_{1/2})O_3$는 유전완화현상이 전혀 관찰되지 않는 정상 강유전특성을 보였다. Raman 분광법에 의해 $Pb(Fe_{1/2}Ta_{1/2})O_3$의 $Fe^{3+}$과 $Ta^{5+}$은 XRD는 물론 TEM의 제한시야회절패턴으로도 검출하기 어려울 정도의 단거리영역에서 화학양론적으로 1:1 질서배열하고 있으며, $Ta^{5+}$이 $Nb^{5+}$으로 치환됨에 따라 $Fe^{3+}$과 ($Ta^{5+}-Nb^{5+}$) 간의 질서배열은 약화되어 결국 $Pb(Fe_{1/2}Nb_{1/2})O_3$의 $Fe^{3+}$과 $Nb^{5+}$은 완전 무질서배열하고 있음이 밝혀졌다. $Pb(Fe_{1/2}Ta_{1/2})O_3$의 완화형 강유전특성은 B자리 양이온들이 XRD는 물론 TEM의 제한시야회절패턴으로도 검출하기 어려울 정도의 단거리영역에서 화학양론적 1:1 질서배열을 하고 있는 것과, 또 $Pb(Fe_{1/2}Ta_{1/2})O_3$의 $Ta^{5+}$이 $Nb^{5+}$으로 치환됨에 따라 완화형 강유전특성이 감소되는 것은 이 질서배열이 약화되는 것과 그리고 $Pb(Fe_{1/2}Nb_{1/2})O_3$의 정상 강유전특성은 B자리 양이온들이 완전 무질서배열을 하고 있는 것과 연관지을 수 있었다.

• 한국재료학회지
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• 제12권10호
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• pp.814-819
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• 2002

TiN and TaN films as electrode materials of reactive sputtered $Ta_2$$O_{5}$ were prepared by sputtering to compare their thermal stabilities with $Ta_2$$O_{5}$ The microstructural change of $Ta_2$$O_{5}$ films with annealing was also investigated. As- deposited $Ta_2$$O_{5}$ film on $SiO_2$ was amorphous and annealing of 80$0^{\circ}C$ for 30 min made it transform to $\beta$-Ta$_2$O$_{5}$ crystalline which contains amorphous particles with the size of a few nm. Crystallization temperature of Ta$_2$Ta_2$$O_{5}$ on TaN is higher than that on TiN electrode. The interface between TaN and Ta$_2$O$_{5}$ maintained stably even after vacuum annealing up to $800^{\circ}C$ for 1 hr, but TiN interacted with $Ta_2$$_O{5}$ and so interdiffusion between TiN and $Ta_2$$O_{5}$ occurred by vacuum annealing of 80$0^{\circ}C$ for 1 hr. It indicates that TaN is thermally more stable with $Ta_2$$O_{5}$ than TiN.N.

• 대한금속재료학회지
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• 제50권11호
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• pp.823-828
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• 2012

Direct reduction of $Ta_2O_5$ using liquid calcium was investigated. The experiment was conducted in a closed stainless steel chamber in an Ar atmosphere for 5-120 minutes. Most of $Ta_2O_5$ was reduced to ${\alpha}-Ta$ in 30 minutes above 1173 K and at a molar ratio of Ca and $Ta_2O_5$ above 10. The particles size increased with the reaction temperature, but it did not change much above 1223 K. The oxygen content of metal Ta was about 1 wt%.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• 센서학회지
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• 제1권2호
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• pp.173-181
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• 1992

RP 반응성 스펏터링으로서 P형 실리콘 웨이퍼위에 $Ta_{2}O_{5}$막을 제조하였다. 시편의 구조 및 조성은 XRD와 AES로 조사하였다. 산소의 혼합비가 10%일 때 C-V 특성으로부터 구한 $Ta_{2}O_{5}$막의 비유전률은 10-12이었다. AES와 RBS로 측정한 $Ta_{2}O_{5}$막의 Ta : O의 비는 각각 1 : 2와 1 : 2.49로 나타났으며, 산소분위기에서 $700^{\circ}C$의 열처리 온도에서 결정성장이 시작되었다. 산소분위기에서 $1000^{\circ}C$로 열처리한 $Ta_{2}O_{5}$막의 비유전률값은 20.5였으며, 질소분위기에서 열처리한 경우의 비유전률값은 23으로 나타났다. 이 때 가육방전계(pseudo hexagonal ${\delta}-Ta_{2}O_{5}$)의 결정구조를 나타내었다. 시편의 ${\Delta}V_{FB}$와 누설전류밀도는 산소의 혼합비가 증가함에 따라 감소하였다. 그리고 최대절연파괴전장은 산소가 10% 혼합되었을 때 2.4MV/cm로 나타났다. 이러한 $Ta_{2}O_{5}$막은 수소이온 감지막 및 기억용소자의 게이트 절연막 등에 응용될 수 있을 것이다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.256-257
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• 2014

The effects of the preparation conditions of ZnO-modified TaON on the photocatalytic activity for degradation of rhodamine B dye (Rh. B) under simulated solar light were investigated. The ZnO/TaON nanocomposite were prepared by loading particulate $Ta_2O_5$ with ZnO using different ZnO contents, followed by thermal nitridation at 1123 K for 5 h under $NH_3$ flow (20 ml min.1). The asprepared samples were characterized by XRD, UV-Vis-DRS, and SEM-EDX. The results revealed that the band gap energy absorption edge of as prepared nanocomposite samples was shifted to a longer wavelength as compared to ZnO and $Ta_2O_5$, and the 60 wt% ZnO/TaON nanocomposite exhibited the highest percentage (99.2 %) of degradation of Rh. B and the highest reaction rate constant ($0.0137min^{-1}$) in 4 h which could be attributed to the enhanced absorption of the ZnO/TaON nanocomposite photocatalyst. Hence, these results suggest that the ZnO/TaON nanocomposite exhibits enhanced photocatalytic activity for the degradation of rhodamine B under simulated solar light irradiation in comparison to the commercial ZnO, $Ta_2O_5$, and TaON.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.283.2-283.2
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• 2013

The variation of chemical and interfacial state during the growth of Ta2O5 films on the Si substrate by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor Ta(NtBu)(dmamp)2Me was used as the metal precursor, with Ar as a purging gas and H2O as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of Ta2O5 growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the Ta5+ state, which corresponds with the stoichiometric Ta2O5, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between Ta2O5 and Si. The measured valence band offset value between Ta2O5 and the Si substrate was 3.08 eV after 2.5 cycles.