• Journal of the Korea Furniture Society
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• v.19 no.3
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• pp.211-218
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• 2008

This experiment was carried out to investigate the effect of internal holes on the bending strength of PB. The diameters of holes are 0mm to 13mm. The locations of holes are 1/8 to 4/5 point horizontally from sample end and are 1/5 to 4/5 vertically from sample surface, the numbers of holes are 1 to 4 pcs. In the size of internal holes, the bending strengths of PB were decreased significantly with the increase of diameter of holes, and the relationship between diameters(D) of holes and bending strength (${\sigma}_b$) of PB was ${\sigma}_b=-11D+168.8$ ($r^2=-0.99^{**}$). The effects of hole-locations and hole-numbers on the bending strengths of PB were large. and so they should be considered as major factors for the jointing design of PB.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.75.1-75.1
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• 2012

Narrow-Line Seyfert 1 galaxies are arguably the most important AGN subclass in investigating the origin of the black hole mass-galaxy stellar velocity dispersion (MBH-${\sigma}$) relation because of their high accretion rates close to the Eddington limit. Currently, it is still under discussion whether NLS1s are off from the local MBH-${\sigma}$ relation. We select a sample of 325 NLS1 at relatively low redshift (z<0.1) from the SDSS DR7 by constraining FWHM of $H{\beta}$ in the range of 800-2,200 km/s. Among them, we measured stellar velocity dispersion of 40 objects which show strong stellar absorption lines, e.g. Mg b triplet(${\sim}5175{\AA}$), Fe($5270{\AA}$). In contrast, the other 285 objects show too weak stellar absorption lines to measure velocity dispersion. Using the sample of 40 objects with stellar velocity dispersion measurements, we investigate whether NLS1s follow the same MBH-${\sigma}$ relation as normal galaxies and broad line AGNs. We also test the reliability of the width of narrow lines as a surrogate of stellar velocity dispersion by comparing directly measured stellar velocity dispersion with ${\sigma}$ inferred from [O III], [N II], [S II] line widths, respectively. We will discuss the connection between AGN activity in NLS1s and galaxy evolution based on these results.

• Journal of Welding and Joining
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• v.8 no.4
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• pp.76-82
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• 1990

Lots of research works have been done to improve the accuracy of the hole drilling method to measure residual stress by many investigators. In this study, first, size effect of specimen was analyzed based on the solution of hole in a strip under tension. If the ratio of hole diameter tothe strip width is less than 0.2, the stress distribution around hold may be given from the solution of hole in an infinite plate. Second, the residual stress above $0.6{\sigma}_y$(yield stress) may be measured less than the actual stress by 10-15 percent. Third, eccentricity of hole relative to the rosette center effects on the accuracy of residual stress measurements by 10 percent. The error due to eccentricity of hole can be corrected by the iteration method or the direct method.

• Journal of the Korean Chemical Society
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• v.31 no.3
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• pp.225-230
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• 1987

Electrical conductivity of $CdO-La_2O_3$ system containing 0.8mol% of CdO was measured from 500 to $900^{\circ}C$ at oxygen partial pressures of $10^{-7}\;to\;10^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant $PO_2$ are found to be linear and the activation energy appears to be 0.97eV. The log ${\sigma}$vs. log $PO_2$ is found to be linear at oxygen pressures of $10^{-7}\;to\;10^{-1}$ atm and $500{\sim}900^{\circ}C$. The conductivity dependence on $PO_2$ at the above temperature range is given by ${\sigma}\;{\alpha}\;PO_2^{1/4}$. The defect structure in this system is believed to be complex, i.e., ${V_{La}}^{'''}$ and $V\"{o}$. The interpretations of conductivity dependences on temperature and $PO_2$ are presented and conduction mechanism is proposed to explain the data.

• Journal of the Korean Chemical Society
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• v.31 no.6
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• pp.498-502
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• 1987

Electrical conductivities of $(ZrO_2)_x-(Tm_2O_3)_y$ systems containing 1, 3 and 5mol% of $ZrO_2$ have been measured as a function of temperature and of oxygen partial pressure at temperatures from 600 to 1,100$^{\circ}$C and oxygen partial pressures from $10^{-5}$ to $2{\times}10^{-1}atm$. Plots of log conductivity vs. 1/T are found to be linear and average activation energy is 1.51 eV. The electrical conductivity dependences on PO$_2$ are different at two temperature regions, indicating ${\sigma}{\alpha}PO_2^{1/5.3}$ and ${\sigma}{\alpha}PO_2^{1/10.7}$ at high-and low-temperature regions, respectively. The defect of $(ZrO_2)_x-(Tm_2O_3)_y$ system is $V_{Tm}^{'''}$ and an electron hole is suggested as a carrier at high temperature region. At low temperature region, a mixed ionic and hole conduction is reasonable.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.2
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• pp.154-161
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• 1995

In order to analysis of the stress distribution around flaws and the interaction effects between fatigue cracks, stress around micro hole was analyzed by Finite Element Method(F.E.M.) and micro hole specimens were tested using rotary bending fatigue machine and twisting fatigue machine to identify stress effects for fatigue cracks initiating from micro holes and interaction effects between micro holes. The results are as follows : Interaction effects of .sigma. $_{y}$for the micro hole side is larger than the large micro hole side when the interval between micro holes is near. Stress concentration factor increase as the diameter of micro hole becomes smaller. But, stress field of micro hole is smaller than that of large micro hole at h .leq. r (h:depth of micro hole, r:radius of micro hole) and that of large hole is larger than that of small micro hole at h >r expect the small range from micro hole.e.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.3
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• pp.555-564
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• 1994

This study has been made to investigate the stress distribution around defects and inclusions that behave as stress concentrators. The stress distribution and interation effects around defects and inclusions was analyzed using Finite Element Method. The results are as follows;(1) Maximum stress point in case of $E_I/E_M>1$($E_I$:elasticity modulus forthe inclusion, $E_M$/:elasticity modulus for the base material)is the vertical point with respect to force direction and in case of $E_I/E_M<1$ it is the parallel point along the hole edge. (2) Interaction effects of ${\sigma}_y$ for the inclusion side is larger than the defect side when the interval between inclusion and defect is near. (3) stress interation effects is large if the difference of ${\sigma}_y$ is small and it is small if the difference of ${\sigma}_y$ is large for the case that the interval between inclusion and defect whose size and property are different is near.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1434-1437
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• 2003

Sometimes open holes are required for the function and the weight reduction of structure and machinery. However, the serious stress concentration occurs because of the geometric discontinuity caused by the holes and cutting section. In this study, it is attempted to obtain the stress concentration coefficients of the inner surface of the hole boundary by changing the position and the shape of holes on the homogeneous isotropic plate. And the effects on the plate are investigated. The results show that the stress level becomes low and the distribution area widens the position of stress concentration changes as the ratio a/b increases and change to a circle. And as the ratio a/l decreases, the stress concentration reduces. As the plate with three holes. the stress $\sigma$$\_$x/ and $\tau$$\_$xy/ of hole 1,3 becomes high, especially $\sigma$$\_$x/ dominant and high.

• Journal of the Korean Chemical Society
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• v.28 no.3
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• pp.149-154
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• 1984

The electrical conductivity of p-type yttrium sesquioxide has been measured as a function of temperature and of oxygen partial pressure at temperatures from 650 to 1050$^{\circ}C$C and oxygen partial pressures from $1 {\times}10^{-5}\;to\;2{\times}10^{-1}$atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear with low-and high-temperature dependences of conductivity. The high-temperature dependence of conductivity shows two different defect structures. The plots of log conductivity vs. log $Po_2$ are found to be linear at $Po_2$'s of $10^{-5}\;to\;10^{-1}$ atm. The electrical conductivity dependences on $Po_2$ are found to be ${{\sigma}{\propto}Po_2}^{1/6}$at $850{\sim}950^{\circ}C,\;{{\sigma}{\propto}Po_2}^{3/16}$ at $950{\sim}1050^{\circ}C\;and\;{{\sigma}{\propto}Po_2}^{1/7.5}{\sim}{{\sigma}{\propto}Po_2}^{1/8.3}\;at\;650{\sim}800^{\circ}C$, respectively. The defect structures are$O_i{''}$ at $850{\sim}950^{\circ}C$ and $V_M{'''}$ at $950{\sim}1050^{\circ}C$. The electron hole is main carrier type, however, ionic contribution is found at lower temperature portion.