• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.120-122
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• 2008

We have studied the tilt angle generation on the homeotropic polyimide (PI) surface using a low intensity ion beam source as a function of incident angle. An excellent LC alignment of nematic liquid crystal (NLC) on the PI surface with ion beam exposure for all incident angles was observed. The tilt angle of NLC on the homeotropic PI surface for all incident angles was from 90 to 88 degree was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of 400 eV had a tendency to increase as ion beam energy incident angle become more instance from 45 degree. Finally, a good LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.414-414
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• 2007

In this study, Liquid Crystal (LC) alignment and tilt angle generation in Nematic Liquid Crystal (NLC) with negative dielectric anisotropy on the homeotropic PI surface with new ion beam exposure are reported. Also. high density of ion beam energy (DuoPIGatron type Ar ion gun) is used in this study. The tilt angle of NLC on the homeotropic Polyimide (PI) surface for all incident angles is measured about 38 degree and this has a stabilization trend. And the good LC alignment of NLC on the PI surface with ion beam exposure of $45^{\circ}$ incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of $45^{\circ}$ had a tendency to decrease as ion beam energy density increase. The tilt angle could be controlled from verticality to horizontality. Also, the LC aligning capabilities of NLC on the homeotropic PI surface according to ion beam energy has the goodness in case of more than 1500 eV. Finally. the superior LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved. For OCB(Optically Compensated Bend) mode driving, we can need pretilt angles control for fast response time. In this study, We success pretilt angles control. Consequently, this result can be applied for OCB mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.288-289
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• 2006

The tilt angle generation of nematic liquid crystal(NLC) on the homeotropic polyimide(PI) surface by the new Ion beam alignment method is studied. The tilt angle of NLC on the homeotropic PI surface for all incident angle is about 38and this has a stabilization trend. And the good LC alignment of the NLC on the PI surface by ion beam exposure of 45Incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface by ion beam exposure of 45Incident angle had a tendency to decrease as ion beam energy density increase. So we had known that pretilit angle could be controlled from verticality to horizontality.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.139-144
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• 1992

Abstract-Polyimide (PI) thin films were deposited by the ionized cluster beam deposition (ICBD) technique. Imidization and crystallization of PI films were investigated using transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FT-IR). PI films deposited under optimum conditions showed a maximum imidization and good crystal structure, which are superior to those of the films fabricated by other techniques.

• Journal of the Korean Mathematical Society
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• v.34 no.3
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• pp.609-622
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• 1997

We investigate the existence of solutions of the nonlinear beam equation under the Dirichlet boundary condition on the interval $-\frac{2}{\pi}, \frac{2}{\pi}$ and periodic condition on the varible t, $Lu + bu^+ -au^- = f(x, t)$, when the jumping nonlinearity crosses the first positive eigenvalue.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Current Optics and Photonics
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• v.8 no.4
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• pp.421-426
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• 2024

The use of stimulated emission depletion (STED) microscopy has significantly improved resolution beyond the limits imposed by diffraction; Furthermore, STED microscopy adopts a 4Pi-geometry to achieve an isotropic improvement in resolution. In isoSTED microscopy, a polarizing beam splitter and retarders are used in a 4Pi cavity to split beams of identical power, generating constructive and destructive interference for lateral and axial resolution improvements, respectively. The precise alignment of the retarders is crucial for optimizing the performance of isoSTED microscopy, because this orientation affects the quality of the depletion focus, necessitating zero intensity at the center. Incomplete destructive interference can lead to unwanted fluorescence inhibition, resulting in degraded resolution and contrast. However, measuring the intensity and polarization state in each optical path of the 4Pi cavity is complex and requires additional devices such as a power meter. Here, we propose a simple and accurate alignment method for the 4Pi cavity in isoSTED microscopy. Our approach demonstrates the equal allocation of power between upper and lower beam paths and achieves complete destructive interference using a polarizing beam displacer and a single CCD camera positioned outside the 4Pi cavity.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.175-180
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• 2000

The intensity of beam of light entering near the pupil edge is less than when it passes through the center of the pupil, this phenomenon is known as the Stiles-Crawford effect. In this paper, we investigate the variation in the shape of confusion circle when the real amplitude distribution of incident beam in pupil area is shifted to any direction by effects. The shape of confusion circle on the image surface is rotational symmetric when the real amplitude distribution of incident beam in pupil area isn't shifted, and the shape of confusion circle on the image surface is asymmetric as ellipse when the real amplitude distribution of incident beam in pupil area is shifted. The shifted direction of the real amplitude distribution of incident beam in pupil area equals the major axis direction of confusion circle on the image surface. When the shifted direction of the real amplitude distribution of incident beam in pupil area changes from ${\Delta}{\phi}$ to ${\Delta}{\phi}+{\pi}$, the intensity distributions and the shapes of confusion circle on the image surface for ${\Delta}{\phi}$ equals that for ${\Delta}{\phi}+{\pi}$. We know from above results that the influences of ${\Delta}{\phi}+{\pi}$ and ${\Delta}{\phi}+{\pi}$ cases on the image quality of optical system equal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.398-398
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• 2007

The Liquid Crystal (LC) alignment uniformity is very important in LC devices. The alignment mechanism of LC molecules on a rubbed polyimide (PI) surface is very important for both LC fundamental research and application. So, Generally a rubbing method to align LC has been widely used to mass-produce LCD panels. But because rubbing method is contact method between rubbing fabric and indium-tin-oxide glass or flexible substrate, rubbing method has some defects, such as the electrode charges and the creation of contaminating particles. Thus we strongly recommend a non-contact alignment technique for getting rid of some defects of rubbing method. Most recently, the LC aligning capabilities achieved by ion-beam exposure on the organic and nonorganic thin film surface have been reported successfully. In this research, we studied the tilt angle generation and electro-optical performances for a NLC on homeotropic polyimide surfaces with ion-beam exposure. The LC aligning capabilities of a nematic liquid crystal (NLC) on a homeotropic PI surface using a new ion-beam method were studied. On the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good. And we achieved satisfactory result for EO character.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.513-514
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• 2008

The potential of non-rubbing technology for applying to display devices was demonstrated by irradiating a high density argon ion beam (IB) on a polyimide (PI) as a liquid crystal alignment layer. The superior electro-optical characteristics were obtained, compared to rubbed PI, Although the low pretilt angle was created on the IB irradiated PI.