• 제목/요약/키워드: ${\Omega}$-stable

검색결과 174건 처리시간 0.026초

Fabrication of Core-Shell Structure of Ni/Au Layer on PMMA Micro-Ball for Flexible Electronics

  • Hong, Sung-Jei;Jeong, Gyu-Wan;Han, Jeong-In
    • Current Photovoltaic Research
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    • 제4권4호
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    • pp.140-144
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    • 2016
  • In this paper, core-shell structure of nickel/gold (Ni/Au) conductive layer on poly-methyl-methacrylate (PMMA) micro-ball was fabricated and its conduction property was investigated. Firstly, PMMA micro-ball was synthesized by using dispersion polymerization method. Size of the ball was $2.8{\mu}m$ within ${\pm}7%$ deviation, and appropriate elastic deformation of the PMMA micro-ball ranging from 31 to 39% was achieved under 3 kg pressure. Also, 200 nm thick Ni/Au conductive layer was fabricated on the PMMA micro-ball by uniformly depositing with electroless-plating. Adhesion of the conductive layer was optimized with help of surface pre-treatment, and the layer adhered without peeling-off despite of thermal expansion by collision with accelerated electrons. Composite paste containing core-shell structured particles well cured at low temperature of $130^{\circ}C$ while pressing the test chip onto the substrate to make electrical contact, and electrical resistance of the conductive layer showed stable behavior of about $6.0{\Omega}$. Thus, it was known that core-shell structured particle of the Ni/Au conductive layer on PMMA micro-ball was feasible to flexible electronics.

코발트/니켈 합금박막으로부터 형성된 복합실리사이드 (Characterization of Composite Silicide Obtained from NiCo-Alloy Films)

  • 송오성;정성희;김득중
    • 한국재료학회지
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    • 제14권12호
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    • pp.846-850
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    • 2004
  • NiCo silicide films have been fabricated from $300{\AA}-thick\;Ni_{1-x}Co_{x}(x=0.1\sim0.9)$ on Si-substrates by varying RTA(rapid thermal annealing) temperatures from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 sec. Sheet resistance, cross-sectional microstructure, and chemical composition evolution were measured by a four point probe, a transmission electron microscope(TEM), and an Auger depth profilemeter, respectively. For silicides of the all composition and temperatures except for $80\%$ of the Ni composition, we observed small sheet resistance of sub- $7\;{\Omega}/sq.,$ which was stable even at $1100^{\circ}C$. We report that our newly proposed NiCo silicides may obtain sub 50 nm-thick films by tunning the nickel composition and silicidation temperature. New NiCo silicides from NiCo-alloys may be more appropriate for sub-0.1${\mu}m$ CMOS process, compared to conventional single phase or stacked composit silicides.

DC Magnetron Sputtering 법에 의한 AC Plasma Display panel의 Cr/Cu/Cr 금속전극 제조 (DC Magnetron Sputtering of Cr/Cu/Cr Metal Electrodes for AC Plasma Display panel)

  • 남대현;이경우;박종완
    • 한국전기전자재료학회논문지
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    • 제13권8호
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    • pp.704-710
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    • 2000
  • Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

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Synthesis of Ni-Ag Core-shell Nanoparticles by Polyol process and Microemulsion Process

  • Nguyen, Ngoc Anh Thu;Park, Joseph G.;Kim, Sang-Hern
    • Bulletin of the Korean Chemical Society
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    • 제34권10호
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    • pp.2865-2870
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    • 2013
  • Ni-Ag core-shell nanoparticles were synthesized by polyol process and microemulsion technique successfully. In the polyol process, a chemical reduction method for preparing highly dispersed pure nickel and Ag shell formation have been reported. The approach involved the control of reaction temperature and reaction time in presence of organic solvent (ethylene glycol) as a reducing agent for Ag cation with poly(vinyl-pyrrolidone) (PVP. Mw = 40000) as a capping agent. In microemulsion method, the emulsion was prepared by water/cetyltrimetylammonium bromide (CTAB)/cyclohexane. The size of microemulsion droplet was determined by the molar ratio of water to surfactant (${\omega}_o$). The core-shell formation along with the change in structural phase and stability against oxidation at high temperature heat treatments of nanoparticles were investigated by X-ray diffraction and TEM analysis. Under optimum conditions the polyol process gives the Ni-Ag core-shell structures with 13 nm Ni core covered with 3 nm Ag shell, while the microemulsion method gives Ni core diameter of 8 nm with Ag shell of thickness 6 nm. The synthesized Ni-Ag core-shell nanoparticles were stable against oxidation up to $300^{\circ}C$.

유도결합 플라즈마 스퍼터링을 이용한 플라스틱 기판 상의 Al이 도핑된 ZnO 박막 증착 (Deposition of Al Doped ZnO Films Using ICP-assisted Sputtering on the Plastic Substrate)

  • 정승재;한영훈;이정중
    • 한국표면공학회지
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    • 제39권3호
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    • pp.98-104
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    • 2006
  • Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

자수 도전사(傳導絲) 기반의 유아체온 센싱 시스템 설계 연구 (A Design of Infant's Body Temperature Sensing System Based on Embroidery Textile Conductive Wire)

  • 송하영;이강휘;이정환
    • 전기학회논문지
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    • 제65권5호
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    • pp.862-867
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    • 2016
  • In this study, the embroidery textile conductive wire of conductive yarn was designed into the wearable integrated clothing for sensing the infant's body temperature. To develop a high quality of the stable fiber-based textile conductive wire, firstly the five types of conductive yarns were twisted or covering polyester yarns and the coated conductive fiber with silver(Ag) or iron(Fe). As a result of comparative conductivity in conductive yarns of yarn processing, the 250 denier of conductive yarns with $0.74{\Omega}$/1~5cm were proposed and used for the integrated embroidery textile conductive wire for sensing. During experiments using the proposed embroidery textile conductive wire, measured resistance of thermistor according to the body temperature was correctly delivered to amplifier module, and showed feasible reliability of temperature sensing. As a wearable application, conductive yarns which takes forms of embroidery textile conductive wire would seems to be reliable as a conductive wire and could be replaced by the conductive metal wires.

외란 소거법을 이용한 강인한 전력 계통 안정화 장치 설계 (Design of Robust Power System Stabilizers Using Disturbance Rejection Method)

  • 김도우;윤기갑;김홍필;양해원
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 C
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    • pp.1195-1199
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    • 1998
  • In this paper a design method of robust power system stabilizers is proposed by means of robust linear quadratic regulator design technique under power system's operating condition change, which is caused by inner structure uncertainties and disturbances into a power system. It is assumed that the uncertainties present in the system are modeled as one equivalent signal. In this connections an optimal LQR control input for disturbance rejection, the output feedback gain for eliminating the disturbance are calculated. In this case. PSS input signal is obtained on the basis of weighted ${\Delta}P_e$ and $\Delta\omega$. In order to stabilize the overall control of system. Pole placement algorithm is applied in addition. making the poles of the closed loop system to move into a stable region in the complex plane. Some simulations have been conducted to verify the feasibility of the proposed control method on a machine to infinite bus power system. From the simulation results validation of the proposed method could be achieved by comparisons with the conventional PSS with phase lag-lead compensation.

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초고온 MEMS용 단결정 3C-SiC의 Ohmic Contact 형성 (Ohmic contact formation of single crystalline 3C-SiC for high temperature MEMS applications)

  • 정귀상;정수용
    • 센서학회지
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    • 제14권2호
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    • pp.131-135
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    • 2005
  • This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

전기접점 재료상에 입힌 경질금고금층의 특성연구 Properties of a Hard Gold plating Layer on Electrical Contace Materials

  • 최송천;장현구
    • 한국표면공학회지
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    • 제23권3호
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    • pp.173-182
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    • 1990
  • In order to prevent the thermal and enviromenatal degradation of contact materials a nickel layer was plated as an undercoat of gold plating on the surface phosphorous bronze. The thickness of nikel and gold coating and chemical resistance of the coatings were measured at various conditions. Variation of morphology and chemical composition was studied by SEM, EDS and ESCA, respectively. Nickel layer was found to act as a thermal diffusion barrier and to retard the diffusion of copper from substrate to gold coating in the temperature $200^{\circ}C$~$400^{\circ}C$. below $200^{\circ}C$gold coated contacts showed a stable and low contanct resistance, while above $200^{\circ}C$ rapid diffusion of copper formed copper oxide on the surface layer and raised the contact resistance. With the nickel thinkness of abount 5$\mu$m as an undercoat the gold thinkness of $0.5\mu$m, showed satistactory (less than 1 m$\Omega$) contact resistance below 20$0^{\circ}C$ and corresponding gold thinkness increased to 1.0 m at $300^{\circ}C$~$400^{\circ}C$.

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용액코팅된 탄소나노튜브 전극의 광전기적 성질 (Opto-electrical properties of solution based carbon nanotube electrode)

  • 우종석;김선영;한중탁;이건웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.394-394
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    • 2007
  • Transparent conductive films can serve as a critical component in displays, solar cells, lasers, optical communication devices, and solid state lighting. Carbon nanotube (CNT) based transparent conductive films are fabricated on glass and polymer substrates. CNTs typically exist in form of quasi-crystalline bundles or highly entangled bundles containing tens of individual nanotubes. To achieve full potential, CNTs must be dispersed in a solvent or other organic media. CNTs are acid treated with nitric acid then the stable dispersion of CNTs in polar solvent such as alcohols, DMF, etc. is achieved by sonication. The solubility of CNTs correlates well with the area ratio of the D and G bands from Raman spectrum. Thin films are formed from well dispersed CNT solutions using spray coating method. CNT thin films exhibit a sheet resistance ($R_s$) of nearby $10^3\;{\Omega}/sq$ with a transmittance of around 80% on the visible light range, which is attributed by excellent dispersion and interaction among CNTs, solvents and polymeric binders.

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