• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.103-103
• /
• 2011

The epitaxial Cu-doped ZnO and pure ZnO thin films were grown on Al2O3 (0001) substrates by RF sputtering method. The structures and crystallographic orientations were investigated using X-ray diffraction (XRD) and X-ray absorption spectroscopy. From the XRD pattern, it is observed that peak positions shift towards higher $2{\theta}$ value with Cu doping. The ${\omega}$-scan measurements at the (0002) diffraction peak for these samples reveal that the full-widths at half-maxima (FWHMs) are about $0.017-0.019^{\circ}$, which indicate a good c-axis orientation of the Zn1-xCuxO films. From phi-scan, all of the Zn1-xCuxO films were epitaxially grown. EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. All the results confirmed that copper ion were well incorporated into the ZnO lattices by substituting Zn sites without changing the wurtzite structure and no secondary phase existed in Cu-doped ZnO thin films.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 춘계학술발표대회
• /
• pp.5-5
• /
• 2011

The research and development of hybrid electric vehicle (HEV), plug-in hybrid electric vehicle (PHEV) and electric vehicle (EV) are intensified due to the energy crisis and environmental concerns. In order to meet the challenging requirements of powering HEV, PHEV and EV, the current lithium battery technology needs to be significantly improved in terms of the cost, safety, power and energy density, as well as the calendar and cycle life. One new technology being developed is the utilization of composite cathode by mixing two different types of insertion compounds [e.g., spinel $LiMn_2O_4$ and layered $LiMO_2$ (M=Ni, Co, and Mn)]. Recently, some studies on mixing two different types of cathode materials to make a composite cathode have been reported, which were aimed at reducing cost and improving self-discharge. Numata et al. reported that when stored in a sealed can together with electrolyte at $80^{\circ}C$ for 10 days, the concentrations of both HF and $Mn^{2+}$ were lower in the can containing $LiMn_2O_4$ blended with $LiNi_{0.8}Co_{0.2}O_2$ than that containing $LiMn_2O_4$ only. That reports clearly showed that this blending technique can prevent the decline in capacity caused by cycling or storage at elevated temperatures. However, not much work has been reported on the charge-discharge characteristics and related structural phase transitions for these composite cathodes. In this presentation, we will report our in situ x-ray diffraction studies on this mixed composite cathode material during charge-discharge cycling. The mixed cathodes were incorporated into in situ XRD cells with a Li foil anode, a Celgard separator, and a 1M $LiPF_6$ electrolyte in a 1 : 1 EC : DMC solvent (LP 30 from EM Industries, Inc.). For in situ XRD cell, Mylar windows were used as has been described in detail elsewhere. All of these in situ XRD spectra were collected on beam line X18A at National Synchrotron Light Source (NSLS) at Brookhaven National Laboratory using two different detectors. One is a conventional scintillation detector with data collection at 0.02 degree in two theta angle for each step. The other is a wide angle position sensitive detector (PSD). The wavelengths used were 1.1950 ${\AA}$ for the scintillation detector and 0.9999 A for the PSD. The newly installed PSD at beam line X18A of NSLS can collect XRD patterns as short as a few minutes covering $90^{\circ}$ of two theta angles simultaneously with good signal to noise ratio. It significantly reduced the data collection time for each scan, giving us a great advantage in studying the phase transition in real time. The two theta angles of all the XRD spectra presented in this paper have been recalculated and converted to corresponding angles for ${\lambda}=1.54\;{\AA}$, which is the wavelength of conventional x-ray tube source with Cu-$k{\alpha}$ radiation, for easy comparison with data in other literatures. The structural changes of the composite cathode made by mixing spinel $LiMn_2O_4$ and layered $Li-Ni_{1/3}Co_{1/3}Mn_{1/3}O_2$ in 1 : 1 wt% in both Li-half and Li-ion cells during charge/discharge are studied by in situ XRD. During the first charge up to ~5.2 V vs. $Li/Li^+$, the in situ XRD spectra for the composite cathode in the Li-half cell track the structural changes of each component. At the early stage of charge, the lithium extraction takes place in the $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component only. When the cell voltage reaches at ~4.0 V vs. $Li/Li^+$, lithium extraction from the spinel $LiMn_2O_4$ component starts and becomes the major contributor for the cell capacity due to the higher rate capability of $LiMn_2O_4$. When the voltage passed 4.3 V, the major structural changes are from the $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component, while the $LiMn_2O_4$ component is almost unchanged. In the Li-ion cell using a MCMB anode and a composite cathode cycled between 2.5 V and 4.2 V, the structural changes are dominated by the spinel $LiMn_2O_4$ component, with much less changes in the layered $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component, comparing with the Li-half cell results. These results give us valuable information about the structural changes relating to the contributions of each individual component to the cell capacity at certain charge/discharge state, which are helpful in designing and optimizing the composite cathode using spinel- and layered-type materials for Li-ion battery research. More detailed discussion will be presented at the meeting.

• 한국재료학회지
• /
• 제13권6호
• /
• pp.347-351
• /
• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• 한국전기전자재료학회논문지
• /
• 제15권7호
• /
• pp.591-596
• /
• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.335-335
• /
• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• 한국잡초학회지
• /
• 제12권2호
• /
• pp.144-157
• /
• 1992

Bensulfuron-methyl은 생이활성(生理活性)이 특히 높고 제초(除草) spectrum이 큰 것으로 알려져 주요 논잡초방제에 사용되고 있으나, 피 및 올방개 등에 대한 방제효과(防除效果)는 다소 미흡하다. 따라서 이들 잡초종(雜草種)에 대한 선택적(選擇的) 작용력(作用力)이 비교적 큰 동시에 다른 약제의 흡수를 증대시키는 것으로 밝혀진 oxyfluorfen과의 혼합사용(混合使用) 가능성(可能性)을 찾고자 oxyfluorfen 0.25% 입제(粒劑)와 bensulfuron 0.15% 입제(粒劑)를 각각 0, 5, 10, 15, 20g ai/ha수준의 16 혼합조합(混合組合)을 공시(供試)하였다. 일년생과 다년생 주요 잡초종(雜草種)을 대상으로 수도(水稻) 이앙후(移秧後) 5 일에 각각 처리하였으며, 처리한 35 일후에 지상부 생체중(生體重)을 조사하여 각각 처리에 대한 방제율(防除率)을 산정하였다. 두 약제 의 혼합사용(混合使用) 가능성(可能性)은 여러가지 "Joint action model"을 이용하여 두 약제의 상호작용을 비교분석(比較分析)하는 방법으로 검토하였다. 먼저 각초종에 대하여 분산분석(分散分析)한 결과, 피와 올방개 및 잡초 전체에 대해서는 1% 유의수준(有意水準)에서 상호작용효과(相互作用效果)가 인정되었으며 가래와 너도방동사니는 5% 유의수준(有意水準)에서 상호작용효과(相互作用效果)가 인정되었다. 그러나 물달개비, 올챙고랭이, 올미 등은 상호작용효과(相互作用效果)가 인정되지 않았다. 피와 올방개 및 전체초종을 대상으로 혼합모델들을 적용시킨 결과 전체적으로 Colby method와 Regression method는 유사한 결과를 보였다. Calculus method는 해석상(解析上)의 어려움이 있었으나 전반적으로는 이들과 큰 차이가 없었다. Isobole method는 일정한 $ID_X$에서만 상호작용해석(相互作用解析)이 가능하므로 천체적인 약량범위(藥量範圍)의 상호작용(相互作用)을 해석하기는 어렵기 때문에 최소한의 합리적인 잡초방제(雜草防除)를 만족시킬 수 있는 $ID_{30}$ 이상의 Isobole은 작성할 수 없었다. EQM의 경우 ${\theta}$값의 범위(範圍)에 따라 상호작용(相互作用)의 type을 결정하는데 상호작용효과(相互作用效果)의 크기를 비교하려는 입장에서는 해석상(解析上)의 어려움이 따랐다. 본 연구의 결과에서는 다른 Model을과 달리 올방개에 대한 효과에서 Synergism을 나타냈다. 여러 모델들이 모두 동일한 결과를 보여주지는 않았으나 bensulfuron 5~10g과 oxyfluorfen 5~10g을 혼합처리(混合處理)할 경우 synergistic한 경향을 보이며 방제율(防除率)도 비교적 높아 이 수준의 약량을 혼합처리(混合處理)하면 bensulfuron만으로 방제가 어려운 잡초의 방제는 물론 약량 감소를 가져올 수 있을 것으로 기대되었다.