• 한국표면공학회지
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• 제39권6호
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• pp.255-262
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• 2006

Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

• 한국표면공학회지
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• 제34권6호
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• pp.545-552
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• 2001

Effect of ultrasonic agitation on Pd catalyst treatment was studied in metallization of ceramic boards by Cu electroless plating method.96% $Al_{2}$$O_{3}$ ceramic boards were used as substrate. In this study, the ultrasonic frequency of 28kHz was applied. In Pd catalyst, high density Pd nuclei of small size were formed during ultrasonic agitation. Density of Pd was more improved when using of ultrasonic then no stirring. In electroless plating, plating rate was in the range of 0.6~1.8$\mu\textrm{m}$/hr, which value increased with Rochelle Salts addition. Adhesion strength between ceramic boards and Cu layer was improved of 20% when using ultrasonic agitation at $30^{\circ}C$ ,5min.

• 한국표면공학회지
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• 제50권5호
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• pp.411-420
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• 2017

In this paper, two methods of making the Pd-added $SnO_2$ ($Pd-SnO_2$) powder with pure tetragonal phase by the hydrazine method were suggested and compared in terms of crystal structure, surface morphology, and alcohol gas response. One of the addition methods is to use $PdCl_2$ as a Pd source, the other is to use Pd-based organic with oleylamine (OAM). When Pd concentration was increased from 0 to 5 wt%, the average grain size of $Pd-SnO_2$ made with Pd-OAM were decreased from 32 to 12 nm. In the case of using with $PdCl_2$, grain size of the $PdCl_2$ fell to less than 10 nm. However, agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The crack-free $Pd-SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of patterned Pt electrodes by optimized ink dropping method. Also, the 2 wt% $Pd-SnO_2$ thick film made with PdCl2 showed gas responses ($R_{air}/R_{gas}$) of 3.7, 5.7 and 9.0 at alcohol concentrations of 10, 50 and 100 ppm, respectively. On the other hand, the prepared 3 wt% $Pd-SnO_2$ thick film with Pd-OAM exhibited very excellent responses of 3.4, 6.8 and 12.2 at the equivalent measurement conditions, respectively. The 3 wt% $Pd-SnO_2$ thick film with Pd-OAM has a specific surface area of $31.39m^2/g$.

• 한국자기학회지
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• 제19권5호
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• pp.165-170
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• 2009

준안정 상태인 덩치 fcc Fe는 반강자성 상태가 기저 상태인 것으로 알려져 있고 적절한 fcc 금속 표면 위에 fcc Fe를 성장시킬 수 있음이 보고된 바 있다. 본 연구에서는 fcc 금속 (001) 표면 위의 Fe 원자층의 자성을 연구하기 위해 Cu(001), Rh(001), Pd(001), Ag(001) 표면 위의 Fe 단층의 자성을 제일원리계산 방법 중 자성 연구에 가장 적합한 총퍼텐셜선형보강평면파(fullpotential linearized augmented plane wave; FLAPW) 방법을 사용하여 연구하였다. 고려한 계 중에서 2차원 격자상수가 가장 작은 Cu(001) 표면과 가장 큰 Ag(001) 표면 위의 Fe 단층은 강자성이 비교적 큰 에너지 차이로 Fe-fcc 금속 층간 거리에 관계없이 안정적이었고, 중간 크기의 2차원 격자상수를 가진 Rh(001)과 Pd(001) 표면 위의 Fe 단층은 반강자성 상태가 안정적이었으나, 층간 거리가 커짐에 따라 강자성 상태가 안정적일 수도 있는 것으로 계산되었다. 계산된 자기모멘트는 1Fe/Cu(001), 1Fe/Rh(001), 1Fe/Pd(001), 1Fe/Ag(001)의 강자성 상태에서 2.811, 2.945, 2.987, 2.990 $_{{\mu}B}$이었고, 반강자성 상태에서는 2.624, 2.879, 2.922, 3.001 $_{{\mu}B}$이었다.

• 대한전기학회논문지
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• 제35권2호
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• pp.47-54
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• 1986

Hardware implementation of a 32-channel MFC digital receiver has not been easy and simple, because it requires real time processing of PCM data. In this paper, we introduce a method of designing an MFC digital receiver compactly by the channel distribution method. We have implemented the MFC digital receiver to process many cnannels by distributing channels of the TDM input data directly to the commercial digital signal processor chips(NEC uPD7720), and by carrying out the modified Goertzel Algorithm. The design of low cost, reliable, high speed, and compact MFC receiver will be shown.

• 한국포장학회지
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• 제17권2호
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• pp.39-42
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• 2011

신선 편의가공된 절단양파제품의 적정 포장방법을 개발하고자 LDPE $30{\mu}m$, PD900과 PD941 필름을 이용한 수동형 MA 포장의 적용 가능성을 연구하였다. 포장필름을 달리하여 $1^{\circ}C$에서 38일간 저장하면서 포장내의 가스조성, 중량 손실, 부패율, 색도, 경도 등을 측정하였다. 기체 투과도가 낮은 PD900포장이 곰팡이 부패나 육안적인 품질손상 없이 38일 동안 저장되는 데에 무리가 없었고, 색택과 가용성 고형분 함량에서도 비교적 양호하였다.

• 한국세라믹학회지
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• 제39권9호
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• pp.835-839
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• 2002

Micro-Pulling Down(${\mu}$-PD)법을 이용하여 직경 1 mm, 길이 30∼35 mm의 $Er_2O_3$와 MgO가 첨가된 화학양론조성 $LiNbO_3$단결정을 성장하였다. 성장된 결정의 $Er_2O_3$와 MgO 첨가에 따른 up-conversion 특성의 변화 및 MgO 첨가량이 광손상에 미치는 영향을 관찰하기 위해 투과율을 측정하였다. 또한 $LiNbO_3$ 단결정 내의 결함유무를 광학현미경을 이용하여 관찰하였고, Electron Probe Micro Analysis(EPMA)를 이용하여 결정 내에 $Er_2O_3$와 MgO가 균일하게 분포되어있음을 확인하였다.

• 한국세라믹학회지
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• 제46권4호
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• pp.419-424
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• 2009

Congruent or stoichiometric $LiNbO_3$ fiber single crystals were grown by the $\mu$-PD method, and the grown fiber crystals have the several (2 or 3) ridges with a diameter of $1.35{\sim}1.5\;mm$ and a length of $40{\sim}100\;mm$. In this $\mu$-PD process, different growth rates ($10{\sim}60\;mm/h$) were applied. Pt wire or $LiNbO_3$ crystal was used as a seed. The properties of grown $LiNbO_3$ fiber single crystals having a-axis or c-axis according to seeds were effected by the grown conditions(Pt tube diameter, pulling speed, after heater etc.). Disk-type $LiNbO_3$ samples were poled in condition of DC 5 V/cm at 1050, 1075 or $1100^{\circ}C$. XRD, SEM, conoscope image through the polarized microscope, $T_C$ measuring apparatus, optical transmittance measuring instrument are used to identify the properties of $LiNbO_3$.

• 한국재료학회지
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• 제19권8호
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• pp.437-442
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• 2009

This paper describes an improved strategy for controlling the adhesion force using both the antiadhesion and adhesion layers for a successful large-area transfer process. An MPTMS (3-mercaptopropyltrimethoxysilane) monolayer as an adhesion layer for Au/Pd thin films was deposited on Si substrates by vapor self assembly monolayer (VSAM) method. Contact angle, surface energy, film thickness, friction force, and roughness were considered for finding the optimized conditions. The sputtered Au/Pd ($\sim$17 nm) layer on the PDMS stamp without the anti-adhesion layer showed poor transfer results due to the high adhesion between sputtered Au/Pd and PDMS. In order to reduce the adhesion between Au/Pd and PDMS, an anti-adhesion monolayer was coated on the PDMS stamp using FOTS (perfluorooctyltrichlorosilane) after $O_2$ plasma treatment. The transfer process with the anti-adhesion layer gave good transfer results over a large area (20 mm $\times$ 20 mm) without pattern loss or distortion. To investigate the applied pressure effect, the PDMS stamp was sandwiched after 90$^{\circ}$ rotation on the MPTMS-coated patterned Si substrate with 1-${\mu}m$ depth. The sputtered Au/Pd was transferred onto the contact area, making square metal patterns on the top of the patterned Si structures. Applying low pressure helped to remove voids and to make conformal contact; however, high pressure yielded irregular transfer results due to PDMS stamp deformation. One of key parameters to success of this transfer process is the controllability of the adhesion force between the stamp and the target substrate. This technique offers high reliability during the transfer process, which suggests a potential building method for future functional structures.

• 전자공학회논문지D
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• 제34D권4호
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.