• Title/Summary/Keyword: $(Pb_{1-x}La_x)Ti_{1-x/4}O_3$

Search Result 33, Processing Time 0.036 seconds

Pyroelectric Properties of the PLT Thin Films Prepared by Sol-Gel Method (Sol-Gel법으로 제조한 PLT박막의 초전 특성)

  • 김양선;정장호;박인길;이성갑;이영희
    • Electrical & Electronic Materials
    • /
    • v.10 no.6
    • /
    • pp.541-547
    • /
    • 1997
  • (Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

  • PDF

Study of Stoichiometrical Changes in Pulsed Laser Deposited $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) Thin Films (펄스 레이저 증착법으로 제작된 $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) 박막의 화학양론겅인 변화에 대한 연구)

  • Eun, Dong-Seog;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
    • /
    • 1998.07d
    • /
    • pp.1309-1311
    • /
    • 1998
  • $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) thin film has been regarded as one of the most promising materials for applications of sensor, optic devices, and memory devices, because it exhibits various properties as changing the amount of Lanthanum component. So we have prepared PLT thin films on platinized silicon (actually Pt/Ti/$SiO_2$/Si) substrates in oxygen ambient by laser ablation. Energy dispersive X-ray (EDX) revealed that the stoichiometric thin films were fabricated.

  • PDF

Preparation of $Pb_{1-x}La_x(Zr_{1/2}Ti_{1/2})_{1-{x/4}}O_3$ thin films by a sol-gel method using a polypropanediol (Polypropanediol을 이용한 sol-gel법에 의한$Pb_{1-x}La_x(Zr_{1/2}Ti_{1/2})_{1-{x/4}}O_3$박막의 제조)

  • 김태희;박경봉;김찬규
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.12 no.4
    • /
    • pp.178-183
    • /
    • 2002
  • The PLZT (x/50/50, x = 1, 2, 5, 7) thin films have been prepared by a sol-gel method using polypropanediol as a solvent, and their dielectric properties have been investigated. The prepared sol was coated 10 times on $Pt/Ti/SiO2_2$/Si wafer. After post-annealing at 560~$600^{\circ}C$ for 10 min, the 600 nm-thick PLZT (x/50/50) thin films were formed with pure perovskite phase. Grain size of the PLZT (x/50/50) thin films was increased with increasing the amount of La. For all the compositions, dielectric properties such as dielectric constant and remnant polarization were enhanced with increasing annealing temperatures. As the amount of La was increased, the remnant polarization, coercive field and dielectric constant of the PLZT (x/50/50) thin films fired at $600^{\circ}C$ were decreased.

A study on the Frequency Dependence of Dynamic Pyroelectric Properties for $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$(x=0.1)(PLT(10)) Ferroelectric Thin Film ($Pb_{1-x}La_{x}Ti_{1-x/4}O_3$(x=0.1)(PLT(10)) 강유전체 박막에서 동적 초전특성의 주파수 의존성에 관한 연구)

  • 차대은;장동훈;강성준;윤영섭
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11a
    • /
    • pp.104-107
    • /
    • 2001
  • The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

  • PDF

The Dielectric and Piezoelectric Properties of (Pb1-1.5xLax)(Ti1-yMny) System ((Pb1-1.5xLax)(Ti1-yMny)O3계의 유전 및 압전성질)

  • 맹성재;정형진
    • Journal of the Korean Ceramic Society
    • /
    • v.25 no.4
    • /
    • pp.321-328
    • /
    • 1988
  • The sintering phenomena, electrical resistivity, dielectric and piezoelectric properties of lead titanate ceramics modified by the partial substitution of La for Pb and Mn for Ti, (Pb1-1.5xLax)(Ti1-yMny)O3 ceramics, have been investigated. In (Pb1-1.5xLax)(Ti1-yMny)O3 system, with increasing lanthanum content, the realtive bulk density increased, but the Curie point and tetragonality (c/a) decreased. The tetragonal-to-cubic phase transition boundary existed in the range of 0.20

  • PDF

A study on the Frequency Dependence of Dynamic Pyroelectric Properties for $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$ (x=0.1) (PLT(10)) Ferroelectric Thin Film ($Pb_{l-x}La_{x}Ti_{l-x/4}O_3$ (x=0.1) (PLT(10)) 강유전체 박막에서 동적 초전특성의 주파수의존성에 관한 연구)

  • 차대은;장동훈;강성준;윤영섭
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.39 no.12
    • /
    • pp.1008-1015
    • /
    • 2002
  • The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.

A study on the Frequency Dependence of Dynamic Pyroelectric Properties for $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.1) (PLT(10)) Ferroelectric Thin Film ($Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.1) (PLT(10)) 강유전체 박막에서 동적 초전특성의 주파수 의존성에 관한 연구)

  • Cha, Dae-Eun;Chang, Dong-Hoon;Kang, Seong-Jun;Yoon, Yung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11b
    • /
    • pp.104-107
    • /
    • 2001
  • The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

  • PDF

Fabrication of PLT target and thin film formation by rf-magnetron sputtering method ($PLT(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$ 타켓의 제조 및 rf-magnetron sputtering법으로 박막 형성)

  • Jung, J.M.;Cho, S.H.;Park, S.G.;Choi, S.Y.;Kim, K.W.
    • Journal of Sensor Science and Technology
    • /
    • v.6 no.1
    • /
    • pp.56-62
    • /
    • 1997
  • Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

  • PDF