• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.25-30
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• 1991

The evaporation characteristics of Ag, Al, Au, Cr. Cu, In, Mg, Mn, Pb, Pd, Si, SiO, Sn, Ti and Zn with the various resistive heating sources have been studied. The employed sources are refractory metal (Mo, Ta and W) boats, W-wire, ceramic (usually Al2O3)-coated and -barriered refractory metal boats, and special boats such as baffled boats and intermetallic boats (nitride compound and graphite). We investigated the melting mode, evaporation rate at a specific power, and lifetime of the sources. A special boat holder is also discussed which is needed to cool the sources at a large heat capacity.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.173-173
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• 2000

Multilayered films (MLF) consisting of transition metals and semiconductors have drawn a great deal of interest because of their unique properties and potential technological applications. Fe/Si MLF are a particular topic of research due to their interesting antiferromagnetic coupling behavior. although a number of experimental works have been done to understand the mechanism of the interlayer coupling in this system, the results are controversial and it is not yet well understood how the formation of an iron silicide in the spacer layers affects the coupling. The interpretation of the coupling data had been hampered by the lack of knowledge about the intermixed iron silicide layer which has been variously hypothesized to be a metallic compound in the B2 structure or a semiconductor in the more complex B20 structure. It is well known that both magneto-optical (MO0 and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In order to understand the structure and physical properties of the interfacial regions, Fe/Si multilayers with very thin sublayers were investigated by the MO and optical spectroscopies. The Fe/si MLF were prepared by rf-sputtering onto glass substrates at room temperature with a totall thickness of about 100nm. The thicknesses of Fe and Si sublayers were varied from 0.3 to 0.8 nm. In order to understand the fully intermixed state, the MLF were also annealed at various temperatures. The structure and magnetic properties of Fe/Si MLF were investigated by x-ray diffraction and vibrating sample magnertometer, respectively. The MO and optical properties were measured at toom temperature in the 1.0-4.7 eV energy range. The results were analyzed in connection with the MO and optical properties of bulk and thin-film silicides with various structures and stoichiometries.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.39-43
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• 2001

$SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.150-150
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• 2012

본 연구는 1차원 나노 구조의 합성과 기초적 분석에 관한 연구로써 특히 무기 산화물 나노재료를 그 대상으로 하였다. 내용으로는 첫째, 1차원 코어 나노와이어의 합성을 하였고 Thermal evaporation, substrate의 가열, 그리고 MOCVD 를 사용한 결과들을 나열한다. 둘째, 코어-쉘 나노와이어를 제작하기 위하여 특히 쉘층의 제작방법을 연구하였는데 PECVD, ALD, 그리고 sputtering에 의한 결과들을 나열하고 간단히 설명한다. Thermal evaporation에 의한 1차원 나노와이어 합성의 경우는 MgO의 예를 들었는데 MgO 나노와이어는 Au가 증착된 기판을 열처리하여 Au dot를 형성하고 이의 morphology를 조절하여 최적의 나노와이어 합성조건을 선정하였다. 이로써 기판 morphology가 나노선의 성장및 형상에 영향을 준다는 사실을 알게 되었다. 이 사실은 In2O3기판을 사용하고 이의 표면거칠기를 열처리로 조절하므로써 역시 나노와이어의 성장을 촉진하는 방법을 찾아내었다. 또한 thermal evaporation공법은 source분말의 선택에 따라 다양한 소재를 제작가능하다는 결과를 제시하였다. 예를 들면 SiOx 층이 precoating된 chamber내에서 MgO 나노선을 합성하는 것과 동일한 조건으로 실험을 진행하면 Mg2SiO4 나노와이어가 형성된 것을 확인하였다. 또한 Sn과 MgB2 분말을 함께 적용할 경우 Sn tip을 가진 MgO 나노와이어를 얻을 수 있었다. 이는 Sn이 동시에 촉매의 역할을 하였기 때문일 것으로 추정된다. 한편 Sn과 Bi 혼합분말을 적용한 경우 Bi2Sn2O7 신소재 tip을 포함한 SnO2 나노와이어를 얻을 수 있었다. 이 경우 Bi원자가 적절한 촉매의 역할을 수행한 것으로 사료된다. Substrate의 가열공법에서는 Si wafer상에 각종 금속 즉 Au, Ag, Cu, Co, Mo, W, Pt, Pd등 초박막을 DC sputter 로 형성한후 annealing하는 기술을 사용하였다. 특기할 만한 것은 Co를 사용한 경우 나노와이어의 spring구조를 얻을 수 있었다는 점이다. MOCVD에 의하여는 Ga2O3및 Bi2O3 나노와이어를 비교적 저온에서 합성하였고 In2O3의 경우는 독특한 나노구조를 형성하였고 이의 결정학적 특성에 대하여 조사하였다.

• Journal of Korea Foundry Society
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• v.20 no.2
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• pp.104-109
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• 2000

Three different white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their abrasion wear behavior in as-cast and heat-treated conditions. The specimens were produced using a 15㎏-capacity high frequency induction furnace. Melts were super-heated to $1600^{\circ}C$, and poured at $1550^{\circ}C$ into Y-block pepset molds. Three combinations of the alloying elements were selected so as to obtain the different types of carbides : 3%C-10%Cr-5%Mo-5%W(alloy No. 1: $M_7C_3$ and $M_6C$), 3%C -10%V-5%Mo-5%W(alloy No. 2: MC and $M_2C$) and 3%C-17%Cr-3%V(alloy No. 3: $M_7C_3$ only). A scratching type abrasion test was carried out in the states of as-cast(AS), homogenizing(AH), air-hardening(AHF) and tempering(AHFT). First of all, the as-cast specimens were homogenized at $950^{\circ}C$ for 5h under the vacuum atmosphere. Then, they were austenitized at $1050^{\circ}C$ for 2h and followed by air-hardening in air. The air-hardened specimens were tempered at $300^{\circ}C$ for 3h. 1 ㎏ load was applied in order to contact the specimen with abrading wheel which was wound by 120 mesh SiC paper. The wear loss of the test piece(dimension: $50{\times}50{\times}5$ mm) was measured after one cycle of wear test and this procedure was repeated up to 8 cycles. In all the specimens, the abrasion wear loss was found to decrease in the order of AH, AS, AHFT and AHF states. Abrasion wear loss was lowest in the alloy No.2 and highest in the alloy No.1 except for the as-cast and homogenized condition in which the alloy No.3 showed the highest abrasion wear loss. The lowest abrasion wear loss of the alloy No.2 could be attributed to the fact that it contained primary and eutectic MC carbides, and eutectic $M_2C$ carbide with extremely high hardness. The matrix of each specimen was fully pearlitic in the as-cast state but it was transformed to martensite, tempered martensite and austenite depending upon the type of heat-treatment. From these results, it becomes clear that MC carbide is a significant phase to improve the abrasion wear resistance.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.4
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• pp.229-233
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• 1996

This work has been carried out to reduce the softening of heat affected zone on laser surface alloying. Iron based rapid solidification material with $Cr_{5-10}$, $V_{1-3}$, $Mo_{3-7}$, $W_{2-5}$, $B_{7-8}$, $C_{2-3}$, $Si_{0.5-1}at%$ was alloyed on the surface of SM45C steel. The excellent softening resistance in alloyed and heat affected zone showed, which could be attributed to the formation of stable high temperature precipitates.

• Bulletin of the Korean Chemical Society
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• v.18 no.12
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• pp.1264-1268
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• 1997

The poly(methylsilene) (1) was modified with the group 4 metallocene Cp2MCl2/Red-Al (M = Ti, Zr, Hf) combination catalyst and with the group 6 metal carbonyl M(CO)6 (M = Cr, Mo, W) catalyst, producing the highly cross-linked isoluble polymer and the lowly cross-linked soluble polymer, respectively. An interrelationship between molecular weight and percent ceramic residue yield with metal within the respective group was not found. The polymers modified with the group 4 metallocene combination catalysts have higher molecular weight and lower percent ceramic residue yield than the polymers modified with the group 6 metal carbonyl catalysts do. The catalytic activity of group 4 metallocene combinations appears to be higher at ∼100 ℃, but to be lower at very high temperature than those of group 6 metal carbonyls. The pyrolysis of the modified 1 yielded SiC ceramic.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.589-597
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• 2010

In the present study, the effect of variation in alloying elements on the carbide formation behavior during casting and homogenization treatment of M2 high speed steels was investigated. M2 high speed steels of various compositions were produced by vacuum induction melting. Contents of C, Cr, W, Mo, and V were varied from the basic composition of 0.8C, 0.3Si, 0.2Mn, 4.0Cr, 6.0W, 5.0Mo, and 2.0V in weight percent. Homogenization treatment at $1150^{\circ}C$ for 1.5 hr followed by furnace cooling was performed on the ingots. Area fraction and chemical compositions of eutectic carbide in as-cast and homogenized ingots were analyzed. Area fraction of eutectic carbide appeared to be higher in the ingots with higher contents of alloying elements the area fraction of eutectic carbide also appeared to be higher on the surface regions than in the center regions of ingots. As a result of the homogenization treatment, $M_2C$ carbide, which was the primary eutectic carbide in the as-cast ingots, decomposed into thermodynamically stable carbides, MC and $M_6C$. The latter carbide was found to be the main one after homogenization. Fine carbides uniformly distributed in the matrix was found to be MC type carbide and coarsened by homogenization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.33-33
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• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.