• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.528-533
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• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.

• Nuclear Engineering and Technology
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• 제55권12호
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• pp.4642-4646
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• 2023

The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor were fabricated by funace at 1500 ℃ for 12 h using a solid state reaction. The XRD (X-ray diffraction_Panalytical X'Pert Pro) and FE-SEM (field emission scanning electron microscope) are measured to confirm the crystalline structure and surface morphology of the phosphor. The Tb³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 470~650 nm wavelength range due to transitions from ⁵D₄ to ⁷F_j. Therefore, it shows the green region in the CIE chromaticity diagram under both UV and X-rays excitations. The Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 550~750 nm wavelength range because of ⁵D_i to ⁷F_j. The emission is confirmed to be in the red region using the CIE chromaticity diagram. The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor shows the characteristic f-f transition with a long decay time, which is about several milliseconds. They have the high efficiency of light emission for X-ray because of their high effective Z number (Z_eff = 58.5) and density. Therefore, they are very much promising phosphors for X-ray imaging application in medical fields.

• 한국진공학회지
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• 제21권3호
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• pp.151-157
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• 2012

GaAs/$Al_xGa_{1-x}As$ 이차원 전자계는 양자점, QPC (quantum point contact), 전자 간섭계 등 다양한 형태의 양자구조 제작에 널리 사용된다. 하지만 일반적으로 GaAs 기반 양자소자는 극저온에서 소자의 전도도가 시간에 따라 변하거나 두 가지의 전 상태 사이를 왔다 갔다 하는 random telegraph noise 때문에 소자의 동작 특성이 상당히 불안하다. 이러한 문제점을 해결하기 위하여 산소 플라즈마를 이용한 소자의 표면처리가 소자의 안정성에 미치는 영향을 연구하였다. 이를 통해 소자의 표면을 산소 플라즈마를 이용하여 50 W~120 W 사이의 출력으로 30 초간 처리한 후 HCl : $H_2O$ (1 : 3) 용액을 이용하여 10초간 습식식각한 경우 전도도의 안정성이 매우 향상됨을 알 수 있었다.

• 전기학회논문지
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• 제60권12호
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

• 센서학회지
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• 제5권5호
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• pp.79-84
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• 1996

$n^{+}$형 GaAs 기판위에 MBE로 $1\;{\mu}m$ 두께의 GaAs층과 AlAs층 및 GaAs cap 단결정층을 차례로 성장시켰다. AlAs/GaAs epi층을 $400^{\circ}C$에서 각각 2시간 및 3시간동안 $N_{2}$로 bubbled된 $H_{2}O$ 수증기(水蒸氣)($95^{\circ}C$)에서 산화시켰다. 산화시간에 따른 산화막의 XPS 분석결과, 작은 양의 $As_{2}O_{3}$ 및 AlAS 그리고 원소형 As들이 2시간동안 산화된 시편에서 발견되었다. 그러나 3시간동안 산화시킨 후에는, 2시간동안 산화시켰을 때 산화막내에 존재하던 소량의 As 산화물과 As 원자들은 발견되지 않았다. 따라서 As-grown된 AlAs/GaAs epi층은 3시간동안 $400^{\circ}C$의 산화온도에서 선택적으로 $Al_{2}O_{3}/GaAs$으로 변화되었다. 그러므로 산화온도 및 산화시간은 AlAs/GaAs 계면에서 결함이 없는 표면을 형성하고 기판쪽으로 산화가 진행되는 것을 멈추기 위해서는 매우 결정적으로 작용하는 것으로 조사되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.243.2-243.2
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• 2011

ZnO materials with a wide band gap of approximately 3.3 eV has been used in transparent conducting oxides (TCO) due to exhibitinga high optical transmission, but its low conductivity acts as role of a limitation for conducting applications. Recently, Ga or Al-doped ZnO (GZO, AZO) becomes transparent conducting materials because of high optical transmission and excellent conductivity. However, the fundamental mechanism underlying the improvement of electrical conductivity of the GZO is still the subject of debate. In this study, we have fully investigated the reasons of high conductivity through the characterization of plane defects, crystal orientation, doping contents, crystal structure in Zn1-xGaxO (x=0, 3, 5.1, 5.6, 6.6 wt%). We manufactured Zn1-xGaxO by sintering ZnO and Ga2O3 powers, having a theoretical density of 99.9% and homogeneous Ga-dopant distribution in ZnO grains. The GZO containing 5.6 wt% Ga represents the highest electrical conductivity of $7.5{\times}10^{-4}{\Omega}{\cdot}m$. In particular, many twins and superlattices were induced by doping Ga in ZnO, revealed by X-ray diffraction measurements and TEM (transmission electron microscopy) observations. Twins developed in conventional ZnO crystal are generally formed at (110) and (112) planes, but we have observed the twins at (113) plane only, which is the first report in ZnO material. Interestingly, the superlattice structure was not observed at the grains in which twins are developed and the opposite case was true. This structural change in the GZO resulted in the difference of electrical conductivity. Enhancement of the conductivity was closely related to the extent of Ga ordering in the GZO lattice. Maximum conductivity was obtained at the GZO with a superlattice structure formed ideal ordering of Ga atoms.

• 한국재료학회지
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• 제9권5호
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.13-14
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• 2008

$Al_2O_3$ thin films were deposited on GaN (0001) by remote plasma atomic layer deposition (RPALD) technique using trimethylaluminum (TMA) precursor and oxygen radicals in the temperature range of 25 ~ $500^{\circ}C$. Growth rate per cycle was varied with substrate temperature from 1.8 $\breve{A}$/ cycle at $25^{\circ}C$ to 0.8 $\breve{A}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_2O_3$ thin films was studied using X-ray photo electron spectroscopy (XPS). Excellent electrical properties of $Al_2O_3$/GaN MIS capacitor were grown at $300^{\circ}C$ process temperature.

• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1224-1230
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• 2001

Single crystals of nanocomposite [GaO4Al12(OH)24(H2O)12][Al(OH)6Mo6O18]2(OH)${\cdot}$30H2O, 2, were obtained by the reaction between [GaO4Al12(OH)24(H2O)12]7+ and [Mo7O24]6- clusters in an aqueous solution, analogously to the [AlO4Al12(OH)24(H2O)12][Al(OH)6Mo6O18]2(OH)${\cdot}$29.5H2O nanocomposite, 1. The crystal structure of 2 was determined by single crystal x-ray diffraction; space group $C2}c$ (No. 15), a = 27.418(2) $\AA$, b = 15.647(2) $\AA$, c = 23.960(4) $\AA$, $\beta$ = $102.850(9)^{\circ}$, V = 10,021.5(20) $\AA3$ , Z = 4. Detailed analysis of the structural data show that the clusters are held by intimate hydrogen bondings of the surface O2- and OH- groups of the clusters as well as the ionic interactions between the oppositely charged cluster ions.