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http://dx.doi.org/10.7471/ikeee.2011.15.1.037

A Study on the Fabrication and Electrical Characteristics of High-Voltage BCD Devices  

Kim, Kwang-Soo (Sogang Institute of Advanced Technology, Sogang University)
Koo, Yong-Seo (School of Electrical and Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.15, no.1, 2011 , pp. 37-42 More about this Journal
Abstract
In this paper, the high-voltage novel devices have been fabricated by 0.35 um BCD (Bipolar-CMOS-DMOS) process. Electrical characteristics of 20 V level BJT device, 30/60 V HV-CMOS, and 40/60 V LDMOS are analyzed. Also, the vertical/lateral BJT with the high-current gain and LIGBT with the high-voltage are proposed. In the experimental results, vertical/lateral BJT has breakdown voltage of 15 V and current gain of 100. The proposed LIGBT with the high-voltage has breakdown voltage of 195 V, threshold voltage of 1.5 V, and Vce, sat of 1.65 V.
Keywords
BCD; RESURF; LDMOS; BJT; LIGBT;
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