Browse > Article
http://dx.doi.org/10.17661/jkiiect.2022.15.5.315

Study on Frequency Characteristics for Double-Layer Symmetric Spiral Inductor  

Kim, Jae-Wook (Department of Electronics Engineering, Namseoul University)
Publication Information
The Journal of Korea Institute of Information, Electronics, and Communication Technology / v.15, no.5, 2022 , pp. 315-320 More about this Journal
Abstract
In the case of a general spiral inductor, the orientation of the port is affected as it has an asymmetric structure. In this paper, double-layer spiral inductor that can have a symmetrical structure is proposed, and the simulation and frequency characteristics are analyzed. Compared to the conventional single-layer symmetrical inductor having an inductance of 3.9~4.2nH, the proposed double-layer symmetric spiral inductor has an inductance of 11~12nH in 0.3~1.2GHz frequency range, a quality factor of about 4.4 in 800MHz, and a self-resonant frequency of about 2.7~2.8GHz without changing the port. Compared to the general spiral inductor having a large difference depending on the port, it was confirmed that the influence on the port direction was small.
Keywords
Double-layer; Symmetric; Spiral; Inductor; Inductance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Gukju Ihm, Sobong Shin, Sanggug Lee, "Design, analysis, and comparison of symmetric dual-level spiral inductors for RF integrated circuits", The Institute of Electronics Engineers of Korea-Semiconductor and Devices, vol. 37, no. 10, pp. 17-24, Oct. 2000.
2 N. Burghartz, K. Soyuer, K. A. Jenkins, "Integrated RF and microwave components in BiCMOS technology", IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1559-1570, Sep. 1996.   DOI
3 Jaewook Kim, Heecheol Kim, "Study on frequency characteristics of hexagonal spiral thin-film inductor", The Journal of Korea Institute of Information, Electronics, and Communication Technology, vol. 10, no. 5, pp. 402-408, Oct. 2017.   DOI
4 Jaewook Kim, "Study on frequency characteristics for single-layer symmetric spiral inductor", The Journal of Korea Institute of Information, Electronics, and Communication Technology, vol. 13, no. 5, pp. 353-358, Oct. 2020.   DOI
5 J. Crannickx, M. Steyaert, H. Miyakawa, "A fully integrated spiral-LC CMOS VOC set with prescaler for GSM and DCS-1800 systems", IEEE 1997 CICC, pp. 403-406, 1997.
6 Jiyong Hwang, Kwangsu Choi, Jinyoung Kim, Hyoyun Jung, "A flowability study of Fe based alloy-mixture with high packing density for chip inductor", in Proc. of the International Conference of Manufacturing Technology Engineers (ICMTE) 2021, pp. 198, Dec. 2021.
7 K. Danesh, J. R. Rong, R. A. Hadaway, D. L. Harame, "A Q-factor enhancement technique for MMIC inductors", IEEE RFIC Symposium, pp. 217-220, 1998.
8 K. B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek, S. Moinian, "High Q inductors for wireless applications in a complementary silicon bipolar process", IEEE J. Solid-State Circuits, vol. 31, no. 1, pp. 4-9, 1996.   DOI
9 R. Long, M. A. Copeland, "The modeling, characterization, and design of monolithic inductors for silicon RF IC's", IEEE J. Solid-State Circuits, vol. 32, no. 3, pp. 357-369, March 1997.   DOI