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http://dx.doi.org/10.7464/ksct.2011.17.4.300

Efficient Stripping of High-dose Ion-implanted Photoresist in Supercritical Carbon Dioxide  

Kim, Do-Hoon (Divison of Image and Information Engineering, Pukyong National University)
Lim, Eu-Sang (Divison of Image and Information Engineering, Pukyong National University)
Lim, Kwon-Taek (Divison of Image and Information Engineering, Pukyong National University)
Publication Information
Clean Technology / v.17, no.4, 2011 , pp. 300-305 More about this Journal
Abstract
A mixture of supercritical carbon dioxide and a co-solvent was employed to strip a high-dose ion-implanted photoresist (HDIPR) from the surface of semiconductor wafers. The stripping efficiency was highly improved by the physical force generated from a ultrasonication tip inside the reactor. In addition, helium gas was injected in the reactor as a barrier gas before the introduction of pure supercritical $CO_2$ ($scCO_2$), which reduced the rinsing time significantly. The effect of co-solvents on the stripping efficiency was investigated. The wafer surfaces were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer.
Keywords
Photoresist; Stripping; Supercritical carbon dioxide; Ultrasonication;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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