한국자기공명학회논문지 (Journal of the Korean Magnetic Resonance Society)

한국자기공명학회 (Korean Magnetic Resonance Society)
권호 표지
DOI QR코드

DOI QR Code

Electron magnetic resonance characterization of Fe3+ impurities in a 𝛽-Ga2O3 single crystal

  • Tae Ho Yeom (Department of Artificial Intelligence and Software, Cheongju University)
  • 투고 : 2025.09.03
  • 심사 : 2025.09.11
  • 발행 : 2025.09.20
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

𝛽-Ga2O3 single crystals co-doped with Fe3+ and Mn2+ impurity ions were grown using the floating zone method. By employing an X-band electron magnetic resonance (EMR) spectrometer, electron magnetic resonance spectra of Fe3+ impurity ions in the host crystals were recorded at room temperature. The rotation patterns of Fe3+ resonance lines in the crystallographic planes clearly show that the real local site symmetry of Fe3+ ion within the crystal is monoclinic. It turns out that the Fe3+ impurity ions substitute for Ga3+ ions (Ga3+I sites) in the oxygen octahedron in 𝛽-Ga2O3 single crystal doped with Fe and Mn ions. The substitutional sites of Fe3+ ions are discussed and compared with Mn2+, Cr3+, and Gd3+ impurity ions in the host 𝛽-Ga2O3 crystals.

키워드

과제정보

This work was supported by the research grant of "Research Institute of Industrial Science" at Cheongju University (2025. 3. 1~2027. 2. 28).

참고문헌

  1. V. Sprincean, H. Qiu, O. Lupan, T. Tjardts, D. Petersen, S. Veziroglu, R. Adelung, M. Caraman, Mater. Sci. Semicond. Process. 172, 108040 (2024).
  2. S. J. Pearton, J. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, Appl. Phys. Rev. 5, 011301 (2018).
  3. E. Ahmadi and Y. Oshima, J. Appl. Phys. 126, 160901 (2019).
  4. J. Xu, W. Zheng, and F. Huang, J. Mater. Chem. C 7, 8753 (2019). https://doi.org/10.1039/C9TC02055A
  5. S. Roy, A. Bhattacharyya, P. Ranga, H. Splawn, J. Leach, and S. Krishnamoorthy, IEEE Electron. Device, 42, 1140 (2021). https://doi.org/10.1109/LED.2021.3089945
  6. S. Sharma, K. Zeng, S. Saha, and U. Singisetti, IEEE Electron. Device Lett. 41, 836 (2020).
  7. T. F. Weng, M. S. Ho, C. Sivakumar, B. Balraj, and P. F. Chung, Appl. Surf. Sci. 533, 147476 (2020).
  8. S. Manandhar, A. K. Battu, A. Devaraj, V. Shutthanandan, S. Thevuthasan, and C. V. Ramana, Sci. Rep. 10, 178 (2020).
  9. A. Afzal, J. Materiomics, 5, 542 (2019). https://doi.org/10.1016/j.jmat.2019.08.003
  10. M. García-Carrión, J. Ramírez-Castellanos, E. Nogales, B. Méndez, C. C. You, S. Karazhanov, and E. S. Marstein, Mater. Lett. 261, 127088 (2020).
  11. J. H. Lee, T. A. Doan, Y. J. Park, H. T. M. Hoa, P. H. Phuong, D. T. Le, N. H. Hung, Q. T. Tran, H. S. Lee, J. H. Ryu, J. Y. Yoo, and T. V. Cuong, Catalysts, 10, 1105 (2020). https://doi.org/10.3390/catal10101105
  12. X. Liu, C. Yu, C. Li, and J. Lin, J. Electrochem. Soc. 154, 86 (2007).
  13. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett. 100, 013504 (2012).
  14. T. H. Vo, S. Kim, H. Y. Kim, J. H. Park, D. W. Jeon, and W. S. Hwang, Mater. Sci. Semicond. Process. 173, 108130 (2024).
  15. S. J. Pearton, F. Ren, M. Tadjer, and J. Kim, J. Appl. Phys. 124, 220901 (2018).
  16. M. Henini and M. Razeghi, Optoelectronic Devices: III Nitrides, Elsevier, 2004.
  17. S. Kim, Y. Yoon, D. Seo, J. H. Park, D.W. Jeon, W.S. Hwang, and M. Shin, APL Mater. 11, 061107 (2023).
  18. J. Kim, S. J. Pearton, C. Fares, J. Yang, F. Ren, S. Kim, and A. Y. Polyakov, J. Mater. Chem. C 7, 10–24 (2019). https://doi.org/10.1039/C8TC04193H
  19. J. Kim, S. J. Pearton, C. Fares, J. Yang, F. Ren, S. Kim, A. Y. Polyakov, J. Mater. Chem. C 7, 10–24 (2019). https://doi.org/10.1039/C8TC04193H
  20. S. Elafandi, Z. Ahmadi, N. Azam, and M. Mahjouri-Samani, Nanomaterials, 10, 908 (2020). https://doi.org/10.3390/nano10050908
  21. A. Almaev, V. Nikolaev, P Butenko, S. Stepanov, A. Pechnikov, N. Yakovlev, I. Sinyugin, S. Shapenkov, and M. Scheglov, Phys. Status Solidi, 259, 2100306 (2022). https://doi.org/10.1002/pssb.202100306
  22. A. V. Almaev, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chikiryaka, N. N. Yakovlev, V. M. Kalygina, V. V. Kopyev, and E. V. Chernikov, J. Phys. D: Applied Phys. 53, 414004 (2020).
  23. H. Akazawa, Vacuum, 123, 8 (2016). https://doi.org/10.1016/j.vacuum.2015.10.009
  24. H. Y. Playford, A. C. Hannon, E. R. Barney, and R. I. Walton, Chem. Eur. J. 19, 2803 (2013).
  25. X. Xia, J. S. Li, R. Sharma, F. Ren, M. A. Rasel, S. Stepanoff, N. Al-Mamun, A. Haque, D. E. Wolfe, S. Modak, L. Chernyak, M. E. Law, A. Khachatrian, and S. J. Pearton, ECS J. Solid State Sci. and Tech. 11, 095001(2022).
  26. H. L. Huang, J. M. Johnson, C. Chae, A. Senckowski, M. H. Wong, and J. Hwang, Appl. Phys. Lett. 122, 251602 (2023).
  27. M. Zervos, A. Othonos, V. Gianneta, A. Travlos, and A.G. Nassiopoulou, J. Appl. Phys. 118, 194302 (2015).
  28. M. Ogita, K. Higo, Y. Nakanishi, and Y. Hatanaka, Appl. Surf. Sci. 175-176, 721 (2001).
  29. Q. Zhu, J. Fan, Y. Wei, Z. Wang, J. Zhu, J. Sun, Z. Wang, X. Wang, L. Yang, S. Song, Y. Lei, and X. Ma, J. Mater. Res. Technol. 30, 2397 (2024).
  30. Y. An, L. Dai, Y. Wu, B. Wu, Y. Zhao, T. Liu, H. Hao, Z. Li, G. Niu, J. Zhang, Z. Quan, and S. Ding, J. Adv. Dielect. 9, 1950032 (2019).
  31. M. E. Ingebrigtsen, A. Y. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, and L. Vines, J. Appl. Phys. 125, 185706 (2019).
  32. Y. Yuan, W. Hao, W. Mu, Z. Wang, X. Chen, Q. Liu, G. Xu, C. Wang, H. Zhou, and Y. Zou, X. Zhao, Z. Jia, J. Ye, J. Zhang, S. Long, X. Tao, R. Zhang, and Y. Hao, Fundam. Res. 1, 697 (2021).
  33. P. De´ak, Q. Duy Ho, F. Seemann, B. Aradi, M. Lorke, and T. Frauenheim, Phys. Rev. B 95, 075208 (2017). https://doi.org/10.1103/PhysRevB.95.075208
  34. C. Zimmermann, V. Rønning, Y. K. Frodason, V. Bobal, L. Vines, and J. B. Varley, Phys. Rev. Mater. 4, 074605 (2020).
  35. A. Y. Polyakov, I. H. Lee, A. Miakonkikh, A. V. Chernykh, N. B. Smirnov, I. V. Shchemerov, A. I. Kochkova, A. A. Vasilev, and S. J. Pearton, J. Appl. Phys. 127, 175702 (2020).
  36. T. H. Yeom, J. Kor. Magn. Reson. Soc. 22, 107 (2018).
  37. M. G. An, J. H. Shim, K. Kim, S. Oh, and K. Jeong, J. Kor. Magn. Reson. Soc. 24, 9 (2020).
  38. T. H. Yeom, Y. H. Lee, T. S. Hahn, M. H. Oh, and S. H. Choh, J. Appl. Phys. 79, 1004 (1996).
  39. V. J. Folen, Phys. Rev. A 139, A1961 (1965).
  40. S. Geller, J. Chem. Phys. 33, 676 (1960).
  41. I. G. Kim, T. H. Yeom, S. H. Lee, Y. M. Yu, H. W. Shin, and S. H. Choh, J. Appl. Phys. 89, 4470 (2001).
  42. J. Ahman, G. Svensson, and J. Albertsson, Acta Crystallogr. Sect. C: Cryst. Struct. Commun. C52, 1336 (1996). https://doi.org/10.1107/S0108270195016404
  43. R. Roy, V. G. Hill, and E. F. Osborn, J. Am. Chem. Soc. 74, 719 (1952).
  44. M. Saurat, A. Revcolevschi, and R. Collongues, C. R. Acad. Sci. Paris, Ser. C 271, 58 (1970).
  45. W. Gunsser and K. Rohwer, Phys. Status Solidi B 116, 275 (1983). https://doi.org/10.1002/pssb.2221160132
  46. T. H. Yeom, I. G. Kim, S. H. Lee, S. H. Choh, and Y. M. Yu, J. Appl. Phys. 93, 3315 (2003).
  47. C. S. Oh and T. H. Yeom, New Phys.:Sae Mulli, 68, 522 (2018).
  48. R. D. Shannon, Acta Crystallogr. A, 32, 751 (1976). https://doi.org/10.1107/S0567739476001551