Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Properties of TiN Thin Films Deposited by ALD Using TDMAT Precursor in Low-Temperature Processes

  • Kyu-Min Park (Department of Electrical and Electronics Engineering, Myongji University) ;
  • Gyu-Jin Mun (Department of Semiconductor Engineering, Myongji University) ;
  • Ji-Hun Cho (Department of Electrical and Electronics Engineering, Myongji University) ;
  • Si-Woo Lee (Department of Electrical and Electronics Engineering, Myongji University) ;
  • Gyeong-Jin Min (Department of Semiconductor Engineering, Myongji University) ;
  • Sang-Jeen Hong (Department of Semiconductor Engineering, Myongji University)
  • Received : 2024.06.20
  • Accepted : 2024.09.12
  • Published : 2024.09.30
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Abstract

In this study, TiN thin films, used as electrode thin films, were deposited through the Thermal Atomic Layer Deposition method using TDMAT (Tetrakis(dimethylamido)titanium) as the precursor and NH3 as the reactant. After deposition at various temperatures, the thickness, crystal structure, surface roughness, impurity content, and resistivity of the films were compared. The results showed that the optimal process temperature was 200℃, forming TiO2 anatase and TiN(200) crystal structures. The surface roughness was the lowest, with Ra=0.393nm and Rq=0.502nm, and the impurity content was 27.5% O and 6.35% C, with the resistivity also recording its minimum value. Particularly, at a long pulsed time of 11 seconds, the impurity inclusion due to self-decomposition reactions was dominant, showing excellent properties at lower temperature.

Keywords

Acknowledgement

This research was conducted with support from the Korea Institute for Advancement of Technology (G02P18800005 502) through the 2024 Ministry Collaborative Semiconductor Major Track Project.

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