과제정보
This paper was conducted with the support of the Korea Institute for Industrial Technology Promotion (G02P18800005502) through the 2024 Ministry Collaborative Semiconductor Major Track Project.
참고문헌
- Hwang, Su Min, et al. "Ozone based high-temperature atomic layer deposition of SiO2 thin films." Japanese Journal of Applied Physics, Vol. 59, No. SI, p. SIIG05 (2020).
- Choi, Woo Young, et al. "Influence of intercell trapped charge on vertical NAND flash memory." IEEE Electron Device Letters, Vol. 38, No. 2, pp. 164-167 (2016).
- Blomme, Pieter, et al. "Hybrid floating gate cell for sub-20-nm NAND flash memory technology." IEEE Electron Device Letters, Vol. 33, No. 3, pp. 333-335 (2012).
- Burton, B. B., et al. "SiO2 atomic layer deposition using tris (dimethylamino) silane and hydrogen peroxide studied by in situ transmission FTIR spectroscopy." The Journal of Physical Chemistry C, Vol. 113, No. 19, pp. 8249-8257 (2009).
- Tarraf, Amer, et al. "Stress investigation of PECVD dielectric layers for advanced optical MEMS." Journal of Micromechanics and Microengineering, Vol. 14, No. 3, p. 317 (2003).
- Chen, Zhizhang, et al. "A novel and effective PECVD SiO/sub 2//SiN antireflection coating for Si solar cells." IEEE Transactions on Electron Devices, Vol. 40, No. 6, pp. 1161-1165 (1993).
- Iacona, Fabio, Giulio Ceriola, and Francesco La Via. "Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition." Materials Science in Semiconductor Processing, Vol. 4, No. 1-3, pp. 43-46 (2001).
- Nishi, Yoshio, and Robert Doering, eds. Handbook of semiconductor manufacturing technology. CRC press, 2000. Edited Book.
- Choi, Jin-Kyung, et al. "Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane." Surface and Coatings Technology, Vol. 131, No. 1-3, pp. 136-140 (2000).
- Dominguez, Carlos, et al. "The effect of rapid thermal annealing on properties of plasma enhanced CVD silicon oxide films." Thin Solid Films, Vol. 346, No. 1-2, pp. 202-206 (1999).
- Furukawa K, Liu Y, Gao D, Nakashima H, Uchino K, Furukawa, Katsuhiko, et al. "In situ FT-IR reflective absorption spectroscopy for characterization of SiO2 thin films deposited using sputtering-type electron cyclotron resonance microwave plasma." Applied Surface Science, Vols. 121-122, pp. 228-232 (1997).
- Kong, Woo Hyuck, et al. "Thin Film Characterization on Refractive Index of PECVD SiO2 Thin Films." Journal of the Semiconductor & Display Technology 22.2, 35-39. (2023).
- Rzodkiewicz, Witold, et al. "Determination of the Analytical Relationship between Refractive Index and Density of SiO2 Layers." Acta Physica Polonica A, Vol. 116, p. S92 (2009).