Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs

  • Shiqing Qin (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Tong Cao (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Feiyu Chen (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Yan Gu (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Jiayao Ying (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Weiying Qian (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Naiyan Lu (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Xiangyang Zhang (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University) ;
  • Guofeng Yang (School of Science, Jiangsu Provincial Research Center of Light Industrial Opto-Electronic Engineering and Technology, Jiangnan University)
  • Received : 2023.07.22
  • Accepted : 2023.12.22
  • Published : 2024.06.20
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Abstract

Gallium nitride (GaN) devices switch faster than silicon devices, making them more vulnerable to significant switching oscillations. To reduce the effect of crosstalk in GaN High Electron Mobility Transistor (GaN HEMT)-based bridges, this paper introduces a passive clamp circuit to restrain gate source voltage oscillations. Utilizing resistive and capacitive diodes, as well as diodes and transistors, a bootstrap driving circuit can be established. This circuit forms a low impedance Miller current path from the driving IC to the GaN device, which decreases the impact of both positive and negative crosstalk. Employing resistive and capacitive diodes, as well as diodes and transistors, a bootstrap driving circuit can be established. This circuit creates a low impedance Miller current path from the driving IC to the GaN device, reducing the effects of the positive and negative crosstalk. This method, which mostly uses passive components, simplifies the circuit design in comparison to other passive gate driver methods. Through dual-pulse testing with a GS661008P, its capacity to suppress positive and negative crosstalk in GaN devices has been confirmed.

Keywords

Acknowledgement

This work was funded by the National Natural Science Foundation of China (No. 61974056), the Key Research and Development Program of Jiangsu Province (No. BE2020756), Suzhou Science and Technology Project (No. SZS2020313), and the Fundamental Research Funds for Central Universities (No. JUSRP22032).

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